Stress development of germanium nanocrystals in silicon oxide matrix

2006 ◽  
Vol 89 (11) ◽  
pp. 113126 ◽  
Author(s):  
W. K. Choi ◽  
H. G. Chew ◽  
F. Zheng ◽  
W. K. Chim ◽  
Y. L. Foo ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Stress Development ◽  
Germanium Nanocrystals ◽  
Oxide Matrix

scholarly journals Nanocomposite antifriction molybdenum disulfide (filler) – silicon oxide (matrix) coatings

2019 ◽  
Vol 337 ◽  
pp. 012087
Author(s):  
S. Alexandrov ◽  
K. Tyurikov ◽  
A. Breki ◽  
G. Kondrashkova ◽  
V. Shashikhin ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Silicon Oxide ◽  
Oxide Matrix

Optical Properties of Microcrystalline Silicon in Oxide Matrix through Partial Oxidation of Anodized Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
Toshimichi Ito ◽  
Toshimichi Ohta ◽  
Osamu Arakaki ◽  
Akio Hiraki
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Partial Oxidation ◽  
Silicon Oxide ◽  
Light Emission ◽  
Wavelength Region ◽  
Microcrystalline Silicon ◽  
Quantum Size ◽  
Visible Luminescence ◽  
Oxide Matrix

ABSTRACTMicrocrystalline silicon embedded in silicon oxide has been prepared by means of partial oxidation of porous silicon produced anodically from degenerate p-Si wafers. Their optical properties such as absorption coefficients and luminescence have been characterized. Results show blue shifts in absorption and photoluminescence spectra in a visible wavelength region with decreasing size of the microcrystalline Si in the Si oxide matrix. The quantum size effect is discussed as well as possible origins of the observed visible luminescence, including light emission from as-anodized (or H-chemisorbed) porous silicon.

Comparative study of the residual stress development in HMDSN-based organosilicon and silicon oxide coatings

2020 ◽  
Vol 53 (34) ◽  
pp. 345203
Author(s):  
Montgomery Jaritz ◽  
Christian Hopmann ◽  
Stefan Wilski ◽  
Lara Kleines ◽  
Lars Banko ◽  
...  
Keyword(s):  
Residual Stress ◽  
Comparative Study ◽  
Silicon Oxide ◽  
Oxide Coatings ◽  
Stress Development

Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

2003 ◽  
Vol 83 (10) ◽  
pp. 2058-2060 ◽  
Author(s):  
E. W. H. Kan ◽  
W. K. Choi ◽  
C. C. Leoy ◽  
W. K. Chim ◽  
D. A. Antoniadis ◽  
...  
Keyword(s):  
Size Distribution ◽  
Silicon Oxide ◽  
Oxide Matrix
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