Enhancement of the dielectric response in polymer nanocomposites with low dielectric constant fillers

Nanoscale ◽  
2017 ◽  
Vol 9 (31) ◽  
pp. 10992-10997 ◽  
Author(s):  
Yash Thakur ◽  
Tian Zhang ◽  
C. Iacob ◽  
Tiannan Yang ◽  
J. Bernholc ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Polymer Nanocomposites ◽  
Volume Content ◽  
Dielectric Response ◽  
Nanocomposite Films ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Low Volume

An enhanced dielectric response in nanocomposite films with low dielectric constant nanofillers at a very low volume content is achieved.

scholarly journals BN Nanoparticles/Si3N4Wave-Transparent Composites with High Strength and Low Dielectric Constant

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Dongliang Zhao ◽  
Yujun Zhang ◽  
Hongyu Gong ◽  
Baoxin Zhu ◽  
Xiaoyu Zhang
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Volume Content ◽  
Bending Strength ◽  
High Strength ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Transparent Composites ◽  
Gas Pressure Sintering ◽  
Dielectric And Mechanical Properties

Si3N4wave-transparent composites with different volume content of BN nanoparticles (BNnp/Si3N4) were prepared by gas pressure sintering at 1800°C in N2atmosphere. The effects of BN nanoparticles on the dielectric and mechanical properties of BNnp/Si3N4composites were investigated. The results showed that the addition of the BN nanoparticles improved the dielectric properties of BNnp/Si3N4composites effectively and decreased the mechanical properties. When the volume content of BN nanoparticles was 10%, the dielectric constant and dielectric loss tangent were 4.31 and 0.006, respectively, and the bending strength and fracture toughness still reached 198.9 MPa and 3.36 MPa·m1/2. The high mechanical properties of BNnp/Si3N4composites with 10% BN nanoparticles were attributed to homogeneously dispersed BN nanoparticles which were embedded in the pores formed by the rod-likeβ-Si3N4.

scholarly journals Preparing the Degradable, Flame-Retardant and Low Dielectric Constant Nanocomposites for Flexible and Miniaturized Electronics with Poly(lactic acid), Nano ZIF-8@GO and Resorcinol Di(phenyl phosphate)

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1756 ◽  
Author(s):  
Mi Zhang ◽  
Yu Gao ◽  
Yixing Zhan ◽  
Xiaoqing Ding ◽  
Ming Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Lactic Acid ◽  
Flame Retardant ◽  
Oxygen Index ◽  
Nanocomposite Films ◽  
Low Dielectric Constant ◽  
Poly Lactic Acid ◽  
Phenyl Phosphate ◽  
Low Dielectric ◽  
Limited Oxygen

Degradable, flame retardant, and flexible nanocomposite films with low dielectric constant were prepared with poly (lactic acid) (PLA), nano ZIF-8@GO, and degradable flame-retardant resorcinol di(phenyl phosphate) (RDP). The SEM results of the fractured surfaces indicated that ZIF-8@GO and RDP were dispersed uniformly in the PLA matrix. The prepared films had good mechanical properties and the tensile strength of the film with 1.5 wt% of ZIF-8@GO was increased to 48.2 MPa, compared with 38.5 MPa of pure PLA. Meanwhile, the nanocomposite films were flexible due to the toughing effect of RDP. Moreover, above 27.0% of limited oxygen index (LOI) and a VTM-0 rating were achieved for the nanocomposite films. The effects of nano ZIF-8@GO hybrids and RDP on the dielectric properties were investigated, and the results showed that ZIF-8@GO and RDP were beneficial in reducing the dielectric constant and dielectric loss of the nanocomposites.

Highly transparent, strong, and flexible fluorographene/fluorinated polyimide nanocomposite films with low dielectric constant

2018 ◽  
Vol 6 (24) ◽  
pp. 6378-6384 ◽  
Author(s):  
Xiaodong Yin ◽  
Yiyu Feng ◽  
Qiang Zhao ◽  
Yu Li ◽  
Shuangwen Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Constants ◽  
Nanocomposite Films ◽  
Low Dielectric Constant ◽  
Polyimide Films ◽  
Low Dielectric ◽  
Fluorinated Polyimide ◽  
Polyimide Nanocomposite

Transparent and flexible fluorinated polyimide films with loading of well-dispersed fluorographene exhibit low dielectric constants.

Extrinsic Scaling Effects on the Dielectric Response of Grained BaTiO3 Films

2010 ◽  
Vol 434-435 ◽  
pp. 293-295
Author(s):  
Li Ben Li ◽  
Li Qiu Su ◽  
Zhi Qiang Zhen ◽  
Xin Zhong Li ◽  
Qing Dong Chen ◽  
...  
Keyword(s):  
Phase Transition ◽  
Dielectric Constant ◽  
Dielectric Response ◽  
Thermodynamic Theory ◽  
Single Domain ◽  
Low Dielectric Constant ◽  
Scaling Effects ◽  
Low Dielectric ◽  
Diffusive Phase Transition ◽  
Peak Value

A set of gradient stresses is used in Landau thermodynamic theory to explain the dielectric diffusion of BaTiO3 films grown on thick copper foils. Every grain in the films is treated as a single domain core that is surrounded by boundaries with low dielectric constant. The dielectric diffusion is mainly induced by the diffusive phase transition caused by the gradient stresses. The low dielectric constant boundaries suppress the peak value of the dielectric constant. The results agree with the experiments.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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