scholarly journals BN Nanoparticles/Si3N4Wave-Transparent Composites with High Strength and Low Dielectric Constant

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Dongliang Zhao ◽  
Yujun Zhang ◽  
Hongyu Gong ◽  
Baoxin Zhu ◽  
Xiaoyu Zhang
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Volume Content ◽  
Bending Strength ◽  
High Strength ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Transparent Composites ◽  
Gas Pressure Sintering ◽  
Dielectric And Mechanical Properties

Si3N4wave-transparent composites with different volume content of BN nanoparticles (BNnp/Si3N4) were prepared by gas pressure sintering at 1800°C in N2atmosphere. The effects of BN nanoparticles on the dielectric and mechanical properties of BNnp/Si3N4composites were investigated. The results showed that the addition of the BN nanoparticles improved the dielectric properties of BNnp/Si3N4composites effectively and decreased the mechanical properties. When the volume content of BN nanoparticles was 10%, the dielectric constant and dielectric loss tangent were 4.31 and 0.006, respectively, and the bending strength and fracture toughness still reached 198.9 MPa and 3.36 MPa·m1/2. The high mechanical properties of BNnp/Si3N4composites with 10% BN nanoparticles were attributed to homogeneously dispersed BN nanoparticles which were embedded in the pores formed by the rod-likeβ-Si3N4.

Dielectric and Mechanical Properties of Porous Si3N4-BN Ceramic Composites

2012 ◽  
Vol 512-515 ◽  
pp. 854-857
Author(s):  
Jian Peng Dou ◽  
Xiao Lin Liu ◽  
Jing Tao Ma ◽  
Xu Ping Lin
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
High Speed ◽  
Bending Strength ◽  
Ceramic Composites ◽  
Cold Isostatic Pressing ◽  
Porous Si ◽  
Three Point Bending ◽  
Low Dielectric ◽  
Dielectric And Mechanical Properties

Recently, ceramic composites with low dielectric constant, low loss tangent, high flexural strength and high thermal shock resistance have received a considerable attention as candidate materials for certain high speed radome. In this paper, Si3N4-BN ceramic composites were fabricated by dry-press processing and cold isostatic pressing, with α-Si3N4 and BN as starting powder, Al2O3 and Yb2O3 as sintering additives, PMMA as pore-forming agenSubscript textt. After sintering for 2 h at 1750°C, porous Si3N4-BN ceramic composites with a three-point bending strength of 50~120MPa and a dielectric constant of 3.2~4.4 at 7~18 GHz frequency were obtained. The sintered body was mainly β-Si3N4 grains; BN was dispersed in the grains. The formation of β-Si3N4 grains was demonstrated by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) respectively. Furthermore, the influence of the BN content on the dielectric and mechanical properties was also studied. The porous Si3N4-BN ceramic composites showed a lower dielectric constant and shrinkage. For above excellent properties, Si3N4-BN ceramic composites have been became one of the most hopeful candidate materials for high speed radome.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Preparation and Properties of Porous Si3N4/SiO2/BN Composite Ceramics

2012 ◽  
Vol 512-515 ◽  
pp. 828-831 ◽  
Author(s):  
Wei Dong ◽  
Chang An Wang ◽  
Lei Yu ◽  
Shi Xi Ouyang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
High Strength ◽  
Low Dielectric Constant ◽  
Pressureless Sintering ◽  
Composite Ceramics ◽  
Porous Si ◽  
Low Dielectric ◽  
Dry Pressing ◽  
Porous Si3n4

Porous Si3N4/SiO2/BN composite ceramics with high strength and low dielectric constant were prepared by dry-pressing process and pressureless sintering at 1750°C for 1.5 h in flow nitrogen. The influences of BN content on microstructure, porosity, mechanical and dielectric properties of the porous Si3N4/SiO2/BN composite ceramics were discussed. The results showed that the porous Si3N4/SiO2/BN composite ceramics with porosity ranging from 29% to 48% were fabricated by adjusting the content of BN. The flexural strength of the porous Si3N4/SiO2/BN composite ceramics was 78215 MPa. The dielectric constant of the porous Si3N4/SiO2/BN composite ceramics was 3.9~5 at 1 MHz.

Robust spin-on-glass poly(methyl)silsesquioxane-based low-k materials derived from a cyclic siloxane precursor

RSC Advances ◽  
2015 ◽  
Vol 5 (82) ◽  
pp. 66511-66517 ◽  
Author(s):  
Albert S. Lee ◽  
Sung Yeoun Oh ◽  
Seung-Sock Choi ◽  
He Seung Lee ◽  
Seung Sang Hwang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Cyclic Siloxane ◽  
Low Dielectric ◽  
Methyl Silsesquioxane ◽  
Low K

Low dielectric constant poly(methyl)silsesquioxane spin-on-glass resins incorporating a cyclic precursor exhibited exceptional mechanical properties to withstand CMP processes.

scholarly journals Preparation of Polyimide Films with Ultra-Low Dielectric Constant by Phase Inversion

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1383
Author(s):  
Panpan Zhang ◽  
Lize Zhang ◽  
Ke Zhang ◽  
Jiupeng Zhao ◽  
Yao Li
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Phase Inversion ◽  
Polyimide Film ◽  
Porous Film ◽  
Breakdown Field ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Dielectric Performance ◽  
Fluorinated Graphene

Due to the high value of its dielectric constant, polyimide does not meet the requirements of the development of integrated circuits and high-frequency printed circuits. The development of novel low dielectric constant polyimide materials for the preparation of flexible copper clad laminates is of theoretical and practical significance in the application of polyimide for 5G communications. In this work, different fluorinated graphene/polyamic acids (FG/PAA) were used as the precursor, and the porous polyimide film was successfully prepared by phase inversion. The dielectric constant of the porous polyimide film is relatively low, being less than 1.7. When the content of fluorinated graphene is 0.5 wt%, the overall dielectric performance of the porous film is the best, with a dielectric constant of 1.56 (10 kHz) and a characteristic breakdown field strength of 56.39 kV/mm. In addition, the mechanical properties of the film are relatively poor, with tensile strengths of 13.87 MPa (0.2 wt%), 13.61 MPa (0.5 wt%), and 6.25 MPa (1.0 wt%), respectively. Therefore, further improving the breakdown resistance and mechanical properties of the porous film is essential for the application of porous ultra-low dielectric polyimide materials.

First Pass Study of Surface Modified Porous Low-k by Ion Implantation for Zero Thickness Barrier Requirement of Cu/MSQ/Si Stacks in Copper Metallization Scheme

2005 ◽  
Vol 863 ◽  
Author(s):  
Alok Nandini ◽  
U. Roy ◽  
Zubin P. Patel ◽  
H. Bakhru
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Ion Implantation ◽  
Porous Silica ◽  
Surface Hardness ◽  
Low Dielectric Constant ◽  
Copper Metallization ◽  
Porous Films ◽  
Critical Dimensions ◽  
Low Dielectric

AbstractLow-κ dielectrics have to meet stringent requirements in material properties in order to be successfully integrated. A particularly difficult challenge for material development is to obtain a combination of low dielectric constant with good thermal and mechanical properties. Incorporation of low dielectric constant materials such as porous silica based materials as a replacement to conventional dielectrics like SiO2 and use of Cu metallization schemes has become a necessity as critical dimensions of devices decrease. This paper is focused on the challenges in developing materials with low dielectric constant but strong thermo mechanical properties. Thin films of Ultra-Low materials such as porous Methyl Silsesquioxane (MSQ) (κ=2.2) were implanted with argon 1 × 1016 cm-2 dose at energies varying from 20 to 50 keV at room temperature. This work shows that the surface hardness of the porous films can be improved five times as compared to the as-deposited porous films by implanting Ar with 1 × 1016 cm-2 doses at 20 keV, sacrificing only a slight increase (∼9%) in dielectric constant (e.g., from 2.2 to 2.4). The hardness persists after 4500C annealing. In this current work, an ion implantation strategy was pursued to create a SiO2-like surface on MSQ. The effects of implantation parameters on the barrier property and bulk stability of MSQ were then studied. The results reveal one possible route to attain the “zero barrier thickness” requirement for interconnects systems.

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