scholarly journals Surface passivation and self-regulated shell growth in selective area-grown GaN–(Al,Ga)N core–shell nanowires

Nanoscale ◽  
2017 ◽  
Vol 9 (21) ◽  
pp. 7179-7188 ◽  
Author(s):  
Martin Hetzl ◽  
Julia Winnerl ◽  
Luca Francaviglia ◽  
Max Kraut ◽  
Markus Döblinger ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Shell Growth ◽  
Core Shell ◽  
Selective Area ◽  
Shell Nanowires

scholarly journals Growth of wurtzite GaP in InP/GaP core–shell nanowires by selective-area MOVPE

2015 ◽  
Vol 411 ◽  
pp. 71-75 ◽  
Author(s):  
Fumiya Ishizaka ◽  
Yoshihiro Hiraya ◽  
Katsuhiro Tomioka ◽  
Takashi Fukui
Keyword(s):  
Core Shell ◽  
Selective Area ◽  
Shell Nanowires

scholarly journals GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

2019 ◽  
Vol 9 (17) ◽  
pp. 3528
Author(s):  
Quang Chieu Bui ◽  
Ludovic Largeau ◽  
Martina Morassi ◽  
Nikoletta Jegenyes ◽  
Olivia Mauguin ◽  
...  
Keyword(s):  
Shell Growth ◽  
Oxide Shell ◽  
Core Shell ◽  
Special Focus ◽  
Epitaxial Relationship ◽  
Nanowires Growth ◽  
Edx Analyses ◽  
Promising Solution ◽  
The Impact ◽  
Shell Nanowires

The development of sensors working in a large range of temperature is of crucial importance in areas such as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) are a promising solution for monitoring carbon monoxide (CO). Because the performances of sensors primarily depend on the material properties composing the active layer of the device, it is essential to control them and achieve material synthesis in the first time. In this work, we investigate the synthesis of GaN/Ga2O3 core-shell NWs with a special focus on the formation of the shell. The GaN NWs grown by plasma-assisted molecular beam epitaxy, are post-treated following thermal oxidation to form a Ga2O3-shell surrounding the GaN-core. We establish that the shell thickness can be modulated from 1 to 14 nm by changing the oxidation conditions and follows classical oxidation process: A first rapid oxide-shell growth, followed by a reduced but continuous oxide growth. We also discuss the impact of the atmosphere on the oxidation growth rate. By combining XRD-STEM and EDX analyses, we demonstrate that the oxide-shell is crystalline, presents the β-Ga2O3 phase, and is synthesized in an epitaxial relationship with the GaN-core.

Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy

2016 ◽  
Vol 28 (2) ◽  
pp. 025202 ◽  
Author(s):  
Mohsen Nami ◽  
Rhett F Eller ◽  
Serdal Okur ◽  
Ashwin K Rishinaramangalam ◽  
Sheng Liu ◽  
...  
Keyword(s):  
Core Shell ◽  
Bottom Up ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Shell Nanowires

Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core–shell nanowires on Si(111) substrate

2009 ◽  
Vol 20 (14) ◽  
pp. 145302 ◽  
Author(s):  
Katsuhiro Tomioka ◽  
Yasunori Kobayashi ◽  
Junichi Motohisa ◽  
Shinjiroh Hara ◽  
Takashi Fukui
Keyword(s):  
Core Shell ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Vertically Aligned ◽  
Shell Nanowires

scholarly journals Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy

2012 ◽  
Vol 2012 ◽  
pp. 1-29 ◽  
Author(s):  
K. Hiruma ◽  
K. Tomioka ◽  
P. Mohan ◽  
L. Yang ◽  
J. Noborisaka ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Surface Passivation ◽  
Substrate Surface ◽  
Semiconductor Nanowires ◽  
Vapor Phase Epitaxy ◽  
Core Shell ◽  
Photoluminescence Intensity ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

The fabrication of GaAs- and InP-based III-V semiconductor nanowires with axial/radial heterostructures by using selective-area metal-organic vapor-phase epitaxy is reviewed. Nanowires, with a diameter of 50–300 nm and with a length of up to 10 μm, have been grown along the〈111〉B or〈111〉A crystallographic orientation from lithography-defined SiO2mask openings on a group III-V semiconductor substrate surface. An InGaAs quantum well (QW) in GaAs/InGaAs nanowires and a GaAs QW in GaAs/AlGaAs or GaAs/GaAsP nanowires have been fabricated for the axial heterostructures to investigate photoluminescence spectra from QWs with various thicknesses. Transmission electron microscopy combined with energy dispersive X-ray spectroscopy measurements have been used to analyze the crystal structure and the atomic composition profile for the nanowires. GaAs/AlGaAs, InP/InAs/InP, and GaAs/GaAsP core-shell structures have been found to be effective for the radial heterostructures to increase photoluminescence intensity and have enabled laser emissions from a single GaAs/GaAsP nanowire waveguide. The results have indicated that the core-shell structure is indispensable for surface passivation and practical use of nanowire optoelectronics devices.

Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires

2013 ◽  
Vol 24 (8) ◽  
pp. 085603 ◽  
Author(s):  
F Haas ◽  
K Sladek ◽  
A Winden ◽  
M von der Ahe ◽  
T E Weirich ◽  
...  
Keyword(s):  
Core Shell ◽  
Selective Area ◽  
Shell Nanowires

Enhanced Minority Carrier Lifetimes in GaAs/AlGaAs Core–Shell Nanowires through Shell Growth Optimization

Nano Letters ◽  
2013 ◽  
Vol 13 (11) ◽  
pp. 5135-5140 ◽  
Author(s):  
N. Jiang ◽  
Q. Gao ◽  
P. Parkinson ◽  
J. Wong-Leung ◽  
S. Mokkapati ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Shell Growth ◽  
Core Shell ◽  
Carrier Lifetimes ◽  
Growth Optimization ◽  
Minority Carrier Lifetimes ◽  
Shell Nanowires

Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core–Shell Nanowires

Nano Letters ◽  
2016 ◽  
Vol 16 (12) ◽  
pp. 7580-7587 ◽  
Author(s):  
Xianghai Ji ◽  
Xiaoguang Yang ◽  
Wenna Du ◽  
Huayong Pan ◽  
Tao Yang
Keyword(s):  
Carrier Transport ◽  
Core Shell ◽  
Mocvd Growth ◽  
Selective Area ◽  
Shell Nanowires ◽  
Transport Type

Cracking the Si Shell Growth in Hexagonal GaP-Si Core–Shell Nanowires

Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 2974-2979 ◽  
Author(s):  
S. Conesa-Boj ◽  
H. I. T. Hauge ◽  
M. A. Verheijen ◽  
S. Assali ◽  
A. Li ◽  
...  
Keyword(s):  
Shell Growth ◽  
Core Shell ◽  
Shell Nanowires
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