Encapsulation strategies for III-V core-shell nanowires grown on nanopatterned substrates by selective area epitaxy

2019 ◽  
Author(s):  
Alexander Carel Walhof
Keyword(s):  
Core Shell ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Shell Nanowires

Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy

2016 ◽  
Vol 28 (2) ◽  
pp. 025202 ◽  
Author(s):  
Mohsen Nami ◽  
Rhett F Eller ◽  
Serdal Okur ◽  
Ashwin K Rishinaramangalam ◽  
Sheng Liu ◽  
...  
Keyword(s):  
Core Shell ◽  
Bottom Up ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Shell Nanowires

scholarly journals Growth of wurtzite GaP in InP/GaP core–shell nanowires by selective-area MOVPE

2015 ◽  
Vol 411 ◽  
pp. 71-75 ◽  
Author(s):  
Fumiya Ishizaka ◽  
Yoshihiro Hiraya ◽  
Katsuhiro Tomioka ◽  
Takashi Fukui
Keyword(s):  
Core Shell ◽  
Selective Area ◽  
Shell Nanowires

Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core–shell nanowires on Si(111) substrate

2009 ◽  
Vol 20 (14) ◽  
pp. 145302 ◽  
Author(s):  
Katsuhiro Tomioka ◽  
Yasunori Kobayashi ◽  
Junichi Motohisa ◽  
Shinjiroh Hara ◽  
Takashi Fukui
Keyword(s):  
Core Shell ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Vertically Aligned ◽  
Shell Nanowires

scholarly journals UV LEDs based on p–i–n core–shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy

2019 ◽  
Vol 30 (23) ◽  
pp. 234001 ◽  
Author(s):  
Matt D Brubaker ◽  
Kristen L Genter ◽  
Alexana Roshko ◽  
Paul T Blanchard ◽  
Bryan T Spann ◽  
...  
Keyword(s):  
Core Shell ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Nanowire Heterostructures ◽  
Gan Nanowire ◽  
Uv Leds

Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires

2013 ◽  
Vol 24 (8) ◽  
pp. 085603 ◽  
Author(s):  
F Haas ◽  
K Sladek ◽  
A Winden ◽  
M von der Ahe ◽  
T E Weirich ◽  
...  
Keyword(s):  
Core Shell ◽  
Selective Area ◽  
Shell Nanowires

Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core–Shell Nanowires

Nano Letters ◽  
2016 ◽  
Vol 16 (12) ◽  
pp. 7580-7587 ◽  
Author(s):  
Xianghai Ji ◽  
Xiaoguang Yang ◽  
Wenna Du ◽  
Huayong Pan ◽  
Tao Yang
Keyword(s):  
Carrier Transport ◽  
Core Shell ◽  
Mocvd Growth ◽  
Selective Area ◽  
Shell Nanowires ◽  
Transport Type

scholarly journals Surface passivation and self-regulated shell growth in selective area-grown GaN–(Al,Ga)N core–shell nanowires

Nanoscale ◽  
2017 ◽  
Vol 9 (21) ◽  
pp. 7179-7188 ◽  
Author(s):  
Martin Hetzl ◽  
Julia Winnerl ◽  
Luca Francaviglia ◽  
Max Kraut ◽  
Markus Döblinger ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Shell Growth ◽  
Core Shell ◽  
Selective Area ◽  
Shell Nanowires

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Erratum: GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

1988 ◽  
Vol 24 (17) ◽  
pp. 1117
Author(s):  
D.A. Roberts ◽  
J.P.R. David ◽  
G. Hill ◽  
P.A. Houston ◽  
M.A. Pate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pin Diodes ◽  
Selective Area Epitaxy ◽  
Selective Area
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