Cracking the Si Shell Growth in Hexagonal GaP-Si Core–Shell Nanowires

Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 2974-2979 ◽  
Author(s):  
S. Conesa-Boj ◽  
H. I. T. Hauge ◽  
M. A. Verheijen ◽  
S. Assali ◽  
A. Li ◽  
...  
Keyword(s):  
Shell Growth ◽  
Core Shell ◽  
Shell Nanowires

scholarly journals GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

2019 ◽  
Vol 9 (17) ◽  
pp. 3528
Author(s):  
Quang Chieu Bui ◽  
Ludovic Largeau ◽  
Martina Morassi ◽  
Nikoletta Jegenyes ◽  
Olivia Mauguin ◽  
...  
Keyword(s):  
Shell Growth ◽  
Oxide Shell ◽  
Core Shell ◽  
Special Focus ◽  
Epitaxial Relationship ◽  
Nanowires Growth ◽  
Edx Analyses ◽  
Promising Solution ◽  
The Impact ◽  
Shell Nanowires

The development of sensors working in a large range of temperature is of crucial importance in areas such as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) are a promising solution for monitoring carbon monoxide (CO). Because the performances of sensors primarily depend on the material properties composing the active layer of the device, it is essential to control them and achieve material synthesis in the first time. In this work, we investigate the synthesis of GaN/Ga2O3 core-shell NWs with a special focus on the formation of the shell. The GaN NWs grown by plasma-assisted molecular beam epitaxy, are post-treated following thermal oxidation to form a Ga2O3-shell surrounding the GaN-core. We establish that the shell thickness can be modulated from 1 to 14 nm by changing the oxidation conditions and follows classical oxidation process: A first rapid oxide-shell growth, followed by a reduced but continuous oxide growth. We also discuss the impact of the atmosphere on the oxidation growth rate. By combining XRD-STEM and EDX analyses, we demonstrate that the oxide-shell is crystalline, presents the β-Ga2O3 phase, and is synthesized in an epitaxial relationship with the GaN-core.

Enhanced Minority Carrier Lifetimes in GaAs/AlGaAs Core–Shell Nanowires through Shell Growth Optimization

Nano Letters ◽  
2013 ◽  
Vol 13 (11) ◽  
pp. 5135-5140 ◽  
Author(s):  
N. Jiang ◽  
Q. Gao ◽  
P. Parkinson ◽  
J. Wong-Leung ◽  
S. Mokkapati ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Shell Growth ◽  
Core Shell ◽  
Carrier Lifetimes ◽  
Growth Optimization ◽  
Minority Carrier Lifetimes ◽  
Shell Nanowires

scholarly journals Surface passivation and self-regulated shell growth in selective area-grown GaN–(Al,Ga)N core–shell nanowires

Nanoscale ◽  
2017 ◽  
Vol 9 (21) ◽  
pp. 7179-7188 ◽  
Author(s):  
Martin Hetzl ◽  
Julia Winnerl ◽  
Luca Francaviglia ◽  
Max Kraut ◽  
Markus Döblinger ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Shell Growth ◽  
Core Shell ◽  
Selective Area ◽  
Shell Nanowires

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Phase-Dependent Shell Growth and Optical Properties of ZnSe/ZnS Core/Shell Nanorods

2021 ◽  
Author(s):  
Jiajia Ning ◽  
Yuan Xiong ◽  
Stephen V. Kershaw ◽  
Andrey L. Rogach
Keyword(s):  
Optical Properties ◽  
Shell Growth ◽  
Core Shell

scholarly journals Broadband Meta‐Absorber with Au/Ni Core–Shell Nanowires for Solar Vapor Generator

2021 ◽  
Vol 5 (7) ◽  
pp. 2100185
Author(s):  
Soomin Son ◽  
Jaemin Park ◽  
Sucheol Ju ◽  
Daihong Huh ◽  
Junho Jun ◽  
...  
Keyword(s):  
Core Shell ◽  
Vapor Generator ◽  
Shell Nanowires

scholarly journals Correlated optical and structural analyses of individual GaAsP/GaP core–shell nanowires

2019 ◽  
Vol 30 (30) ◽  
pp. 304001 ◽  
Author(s):  
C Himwas ◽  
S Collin ◽  
H-L Chen ◽  
G Patriarche ◽  
F Oehler ◽  
...  
Keyword(s):  
Core Shell ◽  
Shell Nanowires
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