Enhanced Minority Carrier Lifetimes in GaAs/AlGaAs Core–Shell Nanowires through Shell Growth Optimization

Nano Letters ◽  
2013 ◽  
Vol 13 (11) ◽  
pp. 5135-5140 ◽  
Author(s):  
N. Jiang ◽  
Q. Gao ◽  
P. Parkinson ◽  
J. Wong-Leung ◽  
S. Mokkapati ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Shell Growth ◽  
Core Shell ◽  
Carrier Lifetimes ◽  
Growth Optimization ◽  
Minority Carrier Lifetimes ◽  
Shell Nanowires

Improvement of minority carrier lifetime in GaAs/AlxGa1−xAs core-shell nanowires

COMMAD 2012 ◽  
2012 ◽  
Author(s):  
N. Jiang ◽  
P. Parkinson ◽  
Q Gao ◽  
J. Wong-Leung ◽  
S. Breuer ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Core Shell ◽  
Shell Nanowires

InSb: A Key Material for IR Detector Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
S. R. Jost ◽  
V. F. Meikleham ◽  
T. H. Myers
Keyword(s):  
Minority Carrier ◽  
Bulk Material ◽  
Device Performance ◽  
Injection Device ◽  
Ir Detector ◽  
Material Parameters ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Growth Technology ◽  
Device Technology

ABSTRACTInSb has served as an important mid-wave IR (λ=3−5μm) detector material for several decades. In this presentation, we will briefly review General Electric's InSb Charge Injection Device technology. Emphasis will be placed on device performance as a function of material parameters. A new InSb materials technology utilizing liquid phase epitaxy will be described. This epitaxial growth technology improves InSb material parameters and increases minority carrier lifetimes by more than two orders of magnitude to near the Auger limit. Comparisons will be made between available bulk material parameters and that of the epitaxial material.

Optimization of the Specific On-Resistance of 4H-SiC BJTs

2006 ◽  
Vol 527-529 ◽  
pp. 1429-1432 ◽  
Author(s):  
S. Balachandran ◽  
T. Paul Chow ◽  
Anant K. Agarwal
Keyword(s):  
High Voltage ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Bipolar Junction Transistors ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Recombination Velocity ◽  
The Impact

We evaluate the performance capabilities and limitations of high voltage 4H-SiC based Bipolar Junction Transistors (BJTs). Experimental forward characteristics of a 4kV BJT are studied and simulations are employed to determine the factors behind the higher than expected specific onresistance (Ron,sp) for the device. The impact of material (minority carrier lifetimes), processing (surface recombination velocity) and design (p contact spacing from the emitter mesa) parameters on the forward active performance of this device are discussed and ways to lower Ron,sp, below the unipolar level, and increase the gain (β) are examined.

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