Three dimensional molybdenum oxide/polyaniline hybrid nanosheet networks with outstanding optical and electrochemical properties

2017 ◽  
Vol 41 (19) ◽  
pp. 10872-10879 ◽  
Author(s):  
Kun Zhang ◽  
Yuemin Wang ◽  
Xiaoxuan Ma ◽  
Hangchuan Zhang ◽  
Shuai Hou ◽  
...  
Keyword(s):  
Electrochemical Properties ◽  
Molybdenum Oxide ◽  
Three Dimensional ◽  
Cycling Stability ◽  
Switching Speed ◽  
Fast Switching ◽  
Fast Switching Speed

The hybrid nanosheet networks own complementary dual-electrochromism, fast switching speed and better cycling stability.

Versatile displays based on a 3-dimensionally ordered macroporous vanadium oxide film for advanced electrochromic devices

2015 ◽  
Vol 3 (13) ◽  
pp. 3159-3166 ◽  
Author(s):  
Zhongqiu Tong ◽  
Haowei Yang ◽  
Li Na ◽  
Huiying Qu ◽  
Xiang Zhang ◽  
...  
Keyword(s):  
Oxide Film ◽  
Vanadium Oxide ◽  
Cycling Stability ◽  
Electrochromic Device ◽  
Electrochromic Devices ◽  
Switching Speed ◽  
Fast Switching ◽  
Ordered Macroporous ◽  
Good Cycling Stability ◽  
Fast Switching Speed

An electrochromic device based on a 3DOM vanadium oxide film and a PEDOT:PSS film was fabricated, and this device shows multicolor changes with fast switching speed and good cycling stability.

Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance

2016 ◽  
Vol 858 ◽  
pp. 1095-1098
Author(s):  
Masayuki Yamamoto ◽  
Yasunori Tanaka ◽  
Tsutomu Yatsuo ◽  
Koji Yano
Keyword(s):  
Switching Speed ◽  
Reverse Transfer ◽  
Switching Device ◽  
Fast Switching ◽  
Static Induction Transistor ◽  
Static Induction ◽  
High Transconductance ◽  
Fast Switching Speed

We investigate a cascode configuration of a normally-on SiC-Buried Gate Static Induction Transistor (SiC-BGSIT) and Si-MOSFET as an alternative switching device of the SiC-MOSFET. It is shown that the transconductance of our cascode device is much higher than that of commercial SiC-MOSFETs while the switching speed is much faster than that of normally-off SiC-BGSITs. The origin of the fast switching speed in this cascode configuration is discussed in terms of a simulated reverse transfer capacitance.

Broadband PXI local oscillator modules with low phase noise and fast switching speed

2011 ◽  
Author(s):  
Alexander Chenakin ◽  
Suresh Ojha ◽  
Shyam Nediyanchath ◽  
Vladimir Bykhovsky ◽  
Steven McClellan ◽  
...  
Keyword(s):  
Phase Noise ◽  
Local Oscillator ◽  
Switching Speed ◽  
Fast Switching ◽  
Low Phase Noise ◽  
Fast Switching Speed

Fast-switching-speed, low-forward-voltage-drop static induction (SI) thyristor

1996 ◽  
Vol 116 (3) ◽  
pp. 107-115 ◽  
Author(s):  
Mitsuhide Maeda ◽  
Takuji Keno ◽  
Yuji Suzuki ◽  
Toshiro Abe
Keyword(s):  
Voltage Drop ◽  
Forward Voltage ◽  
Switching Speed ◽  
Fast Switching ◽  
Forward Voltage Drop ◽  
Static Induction ◽  
Fast Switching Speed
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