Versatile displays based on a 3-dimensionally ordered macroporous vanadium oxide film for advanced electrochromic devices

2015 ◽  
Vol 3 (13) ◽  
pp. 3159-3166 ◽  
Author(s):  
Zhongqiu Tong ◽  
Haowei Yang ◽  
Li Na ◽  
Huiying Qu ◽  
Xiang Zhang ◽  
...  

An electrochromic device based on a 3DOM vanadium oxide film and a PEDOT:PSS film was fabricated, and this device shows multicolor changes with fast switching speed and good cycling stability.

2021 ◽  
Vol 9 ◽  
Author(s):  
Shiyou Liu ◽  
Ping Zhang ◽  
Jianjian Fu ◽  
Congyuan Wei ◽  
Guofa Cai

Electrochromic devices (ECDs) have a broad range of application prospects in many important energy efficient optoelectronic fields, such as smart windows, anti-glare rearview mirrors, low-energy displays, and infrared camouflage. However, there are some factors restricting their development, such as low coloration efficiency, slow switching speed, and poor cycling stability. Coordination polymer (CP) is a promising active material for the fabrication of high-performance ECD because of its ultrahigh coloration efficiency, fast switching speed, and excellent cycling stability. In this review, current advances of CP in energy efficient ECDs are comprehensively summarized and evaluated. Specifically, the effects of composition, coordination bonding, and microstructure of the bipyridine- and terpyridine-based CP on EC performances are introduced and discussed in detail. Then, the challenges and prospects of this booming field are proposed. Finally, the broad application prospects of the CPs-based EC materials and the corresponding devices are also demonstrated, which hold numerous revolutionary effects over our daily life. Hopefully, this review would provide useful guidance and further promote progress on the electrochromic and other optoelectronic fields.


2017 ◽  
Vol 41 (19) ◽  
pp. 10872-10879 ◽  
Author(s):  
Kun Zhang ◽  
Yuemin Wang ◽  
Xiaoxuan Ma ◽  
Hangchuan Zhang ◽  
Shuai Hou ◽  
...  

The hybrid nanosheet networks own complementary dual-electrochromism, fast switching speed and better cycling stability.


2016 ◽  
Vol 858 ◽  
pp. 1095-1098
Author(s):  
Masayuki Yamamoto ◽  
Yasunori Tanaka ◽  
Tsutomu Yatsuo ◽  
Koji Yano

We investigate a cascode configuration of a normally-on SiC-Buried Gate Static Induction Transistor (SiC-BGSIT) and Si-MOSFET as an alternative switching device of the SiC-MOSFET. It is shown that the transconductance of our cascode device is much higher than that of commercial SiC-MOSFETs while the switching speed is much faster than that of normally-off SiC-BGSITs. The origin of the fast switching speed in this cascode configuration is discussed in terms of a simulated reverse transfer capacitance.


Author(s):  
Alexander Chenakin ◽  
Suresh Ojha ◽  
Shyam Nediyanchath ◽  
Vladimir Bykhovsky ◽  
Steven McClellan ◽  
...  

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