Synthesis of rGO–Zn0.8Cd0.2S via in situ reduction of GO for the realization of a Schottky diode with low barrier height and highly enhanced photoresponsivity

2017 ◽  
Vol 41 (13) ◽  
pp. 5476-5486 ◽  
Author(s):  
Mrinmay Das ◽  
Joydeep Datta ◽  
Rajkumar Jana ◽  
Sayantan Sil ◽  
Soumi Halder ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Diode ◽  
In Situ Reduction ◽  
P Application

Application of rGO–Zn0.8Cd0.2S in Schottky barrier diode with low barrier height and highly enhanced photoresponse.

Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

2008 ◽  
Vol 600-603 ◽  
pp. 963-966 ◽  
Author(s):  
Shin Harada ◽  
Yasuo Namikawa ◽  
Ryuichi Sugie
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Structure Analysis ◽  
Stacking Faults ◽  
Reverse Current ◽  
Schottky Barrier Diode ◽  
The Other ◽  
Poly Type

Two types of structures related to in-grown SF having a different influence on reverse currents of 4H-SiC SBDs were investigated. One type contained only a single SF formed by 1c of 8H poly-type and showed low reverse currents. The other type was accompanied with short SFs which consisted of 3C poly-type in addition to two SFs formed by 1c of 8H poly-type and showed high reverse currents. SF formed by 1c of 8H poly-type was not the cause of the high reverse current, and we speculate that the barrier height lowering at the short SF attributed to the high reverse currents of SBDs.

Inhomogeneous Barrier Height Analysis of (Ni/Au)–InAlGaN/GaN Schottky Barrier Diode

2011 ◽  
Vol 50 ◽  
pp. 030201 ◽  
Author(s):  
Nagarajan Subramaniyam ◽  
Markku Sopanen ◽  
Harri Lipsanen ◽  
Chang-Hee Hong ◽  
Eun-Kyung Suh
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Diode

scholarly journals Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

2018 ◽  
Vol 15 (11) ◽  
pp. 803-809
Author(s):  
Doldet TANTRAVIWAT ◽  
Wittawat YAMWONG ◽  
Udom TECHAKIJKAJORN ◽  
Kazuo IMAI ◽  
Burapat INCEESUNGVORN
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Implantation Technique ◽  
Metal Line ◽  
Type Silicon ◽  
Boron Implantation ◽  
Line Process

Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SBHs increased from 0.49 to 0.95. The tuning of the effective SBH is mainly attributed to the presence of shallow p-layer, which modifies the energy band at Ti/n-Si interface. This work clearly shows that the ability to precisely control the SBH, regardless of the metal work function, would facilitate the implementation of Schottky diode into various semiconductor structures, such as MPS (Merged PiN Schottky) diode, in order to improve performance without major modification on the existing metal line process.

Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 651-654 ◽  
Author(s):  
C. Koliakoudakis ◽  
J. Dontas ◽  
S. Karakalos ◽  
M. Kayambaki ◽  
S. Ladas ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Photoelectron Spectroscopy ◽  
Schottky Contacts ◽  
Electrical Measurements ◽  
A Value ◽  
Fabrication And Characterization

The behavior of 200nm Cr Schottky contacts on n-type 4H-SiC has been investigated with photoelectron spectroscopy (XPS) and standard (I-V and C-V) electrical measurements at different measurement temperatures. A barrier height close to 1.2 eV was calculated from XPS data under no-current and no-bias conditions on ultra-thin Cr films grown in-situ under UHV conditions. The I-V measurements on as-deposited contacts resulted in a barrier height of 1.06 eV while a value of 1.2 eV has been extracted from the C-V measurements.

A tetranuclear nickel/lead complex with a salen type Schiff base: synthesis, structure and exploration of photosensitive Schottky barrier diode behaviour

2019 ◽  
Vol 43 (13) ◽  
pp. 5020-5031 ◽  
Author(s):  
Sourav Roy ◽  
Arka Dey ◽  
Michael G. B. Drew ◽  
Partha Pratim Ray ◽  
Shouvik Chattopadhyay
Keyword(s):  
Schiff Base ◽  
Charge Transfer ◽  
Schottky Barrier ◽  
Schottky Diode ◽  
Schottky Barrier Diode ◽  
Kinetics Of ◽  
Lead Complex ◽  
Nickel Lead

A tetranuclear nickel(ii)/lead(ii) complex has been synthesized and characterized. The complex based device behaves as a Schottky diode. The charge transfer kinetics of the complex is enhanced after light soaking.

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