Barrier height dependence of Fano factor and 1/f noise effect on InGaP based Schottky barrier diode

2011 ◽  
Vol 110 (3) ◽  
pp. 033721 ◽  
Author(s):  
Sutanu Mangal ◽  
P. Ghelfi ◽  
A. Bogoni ◽  
P. Banerji
2008 ◽  
Vol 600-603 ◽  
pp. 963-966 ◽  
Author(s):  
Shin Harada ◽  
Yasuo Namikawa ◽  
Ryuichi Sugie

Two types of structures related to in-grown SF having a different influence on reverse currents of 4H-SiC SBDs were investigated. One type contained only a single SF formed by 1c of 8H poly-type and showed low reverse currents. The other type was accompanied with short SFs which consisted of 3C poly-type in addition to two SFs formed by 1c of 8H poly-type and showed high reverse currents. SF formed by 1c of 8H poly-type was not the cause of the high reverse current, and we speculate that the barrier height lowering at the short SF attributed to the high reverse currents of SBDs.


2011 ◽  
Vol 50 ◽  
pp. 030201 ◽  
Author(s):  
Nagarajan Subramaniyam ◽  
Markku Sopanen ◽  
Harri Lipsanen ◽  
Chang-Hee Hong ◽  
Eun-Kyung Suh

2009 ◽  
Vol 30 (9) ◽  
pp. 960-962 ◽  
Author(s):  
H. Umezawa ◽  
N. Tatsumi ◽  
S.-i. Shikata ◽  
K. Ikeda ◽  
R. Kumaresan

2017 ◽  
Vol 41 (13) ◽  
pp. 5476-5486 ◽  
Author(s):  
Mrinmay Das ◽  
Joydeep Datta ◽  
Rajkumar Jana ◽  
Sayantan Sil ◽  
Soumi Halder ◽  
...  

Application of rGO–Zn0.8Cd0.2S in Schottky barrier diode with low barrier height and highly enhanced photoresponse.


2017 ◽  
Vol 56 (4S) ◽  
pp. 04CR08 ◽  
Author(s):  
Yusuke Kobayashi ◽  
Hiroshi Ishimori ◽  
Akimasa Kinoshita ◽  
Takahito Kojima ◽  
Manabu Takei ◽  
...  

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