Barrier height reduction of the Schottky barrier diode using a thin highly doped surface layer

1980 ◽  
Vol 51 (9) ◽  
pp. 4919-4922 ◽  
Author(s):  
Ching‐Yuan Wu
2008 ◽  
Vol 600-603 ◽  
pp. 963-966 ◽  
Author(s):  
Shin Harada ◽  
Yasuo Namikawa ◽  
Ryuichi Sugie

Two types of structures related to in-grown SF having a different influence on reverse currents of 4H-SiC SBDs were investigated. One type contained only a single SF formed by 1c of 8H poly-type and showed low reverse currents. The other type was accompanied with short SFs which consisted of 3C poly-type in addition to two SFs formed by 1c of 8H poly-type and showed high reverse currents. SF formed by 1c of 8H poly-type was not the cause of the high reverse current, and we speculate that the barrier height lowering at the short SF attributed to the high reverse currents of SBDs.


1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1428-1430 ◽  
Author(s):  
Masaaki Onomura ◽  
Shinji Saito ◽  
John Rennie ◽  
Yukie Nishikawa ◽  
Peter J. Parbrook ◽  
...  

2011 ◽  
Vol 50 ◽  
pp. 030201 ◽  
Author(s):  
Nagarajan Subramaniyam ◽  
Markku Sopanen ◽  
Harri Lipsanen ◽  
Chang-Hee Hong ◽  
Eun-Kyung Suh

2009 ◽  
Vol 30 (9) ◽  
pp. 960-962 ◽  
Author(s):  
H. Umezawa ◽  
N. Tatsumi ◽  
S.-i. Shikata ◽  
K. Ikeda ◽  
R. Kumaresan

1995 ◽  
Author(s):  
M. Onomura ◽  
S. Saito ◽  
J. Rennie ◽  
Y. Nishikawa ◽  
P. J. Parbrook ◽  
...  

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