Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device

2017 ◽  
Vol 19 (29) ◽  
pp. 18988-18995 ◽  
Author(s):  
Sungjun Kim ◽  
Yao-Feng Chang ◽  
Min-Hwi Kim ◽  
Suhyun Bang ◽  
Tae-Hyeon Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Double Layer ◽  
Resistive Switching ◽  
Layered Structure ◽  
Memory Device ◽  
Resistive Memory ◽  
Power Switching ◽  
Ultralow Power

Here we demonstrate low-power resistive switching in a Ni/SiNy/SiNx/p++-Si device by proposing a double-layered structure (SiNy/SiNx), where the two SiN layers have different trap densities.

Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

2007 ◽  
Vol 46 (4B) ◽  
pp. 2175-2179 ◽  
Author(s):  
Heng-Yuan Lee ◽  
Pang-Shiu Chen ◽  
Ching-Chiun Wang ◽  
Siddheswar Maikap ◽  
Pei-Jer Tzeng ◽  
...  
Keyword(s):  
Low Power ◽  
Hafnium Oxide ◽  
Resistive Memory ◽  
Power Switching

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO 2 /Pt memory device

2016 ◽  
Vol 360 ◽  
pp. 338-341 ◽  
Author(s):  
Lei Zhang ◽  
Haiyang Xu ◽  
Zhongqiang Wang ◽  
Hao Yu ◽  
Jiangang Ma ◽  
...  
Keyword(s):  
Double Layer ◽  
Resistive Switching ◽  
Memory Device ◽  
Unipolar Resistive Switching

scholarly journals Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

2014 ◽  
Vol 105 (22) ◽  
pp. 222106 ◽  
Author(s):  
H. Z. Zhang ◽  
D. S. Ang ◽  
C. J. Gu ◽  
K. S. Yew ◽  
X. P. Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interfacial Layer ◽  
Memory Device ◽  
Resistive Memory

Low power NiN-based resistive switching memory device using Ti doping

2016 ◽  
Vol 109 (18) ◽  
pp. 183507 ◽  
Author(s):  
Dong Su Jeon ◽  
Ju Hyun Park ◽  
Myung Ju Kim ◽  
Tae Geun Kim
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Ti Doping ◽  
Switching Memory
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