Low power NiN-based resistive switching memory device using Ti doping

2016 ◽  
Vol 109 (18) ◽  
pp. 183507 ◽  
Author(s):  
Dong Su Jeon ◽  
Ju Hyun Park ◽  
Myung Ju Kim ◽  
Tae Geun Kim
2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.


2015 ◽  
Vol 54 (2) ◽  
pp. 021802 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Wenjia Ma ◽  
Bing Chen ◽  
Feifei Zhang ◽  
...  

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