scholarly journals Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

2014 ◽  
Vol 105 (22) ◽  
pp. 222106 ◽  
Author(s):  
H. Z. Zhang ◽  
D. S. Ang ◽  
C. J. Gu ◽  
K. S. Yew ◽  
X. P. Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interfacial Layer ◽  
Memory Device ◽  
Resistive Memory

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device

2017 ◽  
Vol 19 (29) ◽  
pp. 18988-18995 ◽  
Author(s):  
Sungjun Kim ◽  
Yao-Feng Chang ◽  
Min-Hwi Kim ◽  
Suhyun Bang ◽  
Tae-Hyeon Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Double Layer ◽  
Resistive Switching ◽  
Layered Structure ◽  
Memory Device ◽  
Resistive Memory ◽  
Power Switching ◽  
Ultralow Power

Here we demonstrate low-power resistive switching in a Ni/SiNy/SiNx/p++-Si device by proposing a double-layered structure (SiNy/SiNx), where the two SiN layers have different trap densities.

Critical role of top interface layer on the bipolar resistive switching of Al/PEDOT:PSS/Al memory device

2011 ◽  
Vol 11 (2) ◽  
pp. e35-e39 ◽  
Author(s):  
Jong Yun Kim ◽  
Hu Young Jeong ◽  
Jeong Won Kim ◽  
Tae Hyun Yoon ◽  
Sung-Yool Choi
Keyword(s):  
Resistive Switching ◽  
Critical Role ◽  
Memory Device ◽  
Interface Layer ◽  
Bipolar Resistive Switching

Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs

2021 ◽  
pp. 1-7
Author(s):  
S. Biswas ◽  
A. D. Paul ◽  
P. Das ◽  
P. Tiwary ◽  
H. J. Edwards ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interfacial Layer ◽  
Switching Performance

Anode modification of polymer light-emitting diode using graphene oxide interfacial layer: The role of ultraviolet-ozone treatment

2013 ◽  
Vol 103 (7) ◽  
pp. 073305 ◽  
Author(s):  
Xiao-Chen Jiang ◽  
Yan-Qing Li ◽  
Yan-Hong Deng ◽  
Qi-Qi Zhuo ◽  
Shuit-Tong Lee ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Interfacial Layer ◽  
Light Emitting Diode ◽  
Ozone Treatment ◽  
Light Emitting ◽  
Anode Modification ◽  
Polymer Light Emitting Diode
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