Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth

CrystEngComm ◽  
2018 ◽  
Vol 20 (12) ◽  
pp. 1705-1710 ◽  
Author(s):  
Xianglong Yang ◽  
Xiufang Chen ◽  
Yan Peng ◽  
Xiaobo Hu ◽  
Xiangang Xu
Keyword(s):  
Seed Crystal ◽  
Lateral Epitaxial Overgrowth ◽  
Selective Area ◽  
Sublimation Growth

We realized the selective-area lateral epitaxial overgrowth of SiC on a 6H-SiC (0001) seed crystal by controlling the supersaturation in sublimation growth.

Dislocation constraint by etch back process of seed crystal in the SiC sublimation growth

2001 ◽  
Vol 233 (1-2) ◽  
pp. 219-225 ◽  
Author(s):  
Tomohisa Kato ◽  
Shin-Ichi Nishizawa ◽  
Kazuo Arai
Keyword(s):  
Seed Crystal ◽  
Sublimation Growth

Polytype Stability of 4H-SiC Seed Crystal on Solution Growth

2011 ◽  
Vol 679-680 ◽  
pp. 24-27 ◽  
Author(s):  
Alexander ◽  
Kazuaki Seki ◽  
Shigeta Kozawa ◽  
Yuji Yamamoto ◽  
Toru Ujihara ◽  
...  
Keyword(s):  
Transition Process ◽  
Seed Crystal ◽  
Solution Growth ◽  
Growth Mode ◽  
Spiral Growth ◽  
Cvd Growth ◽  
Sublimation Growth

We investigated the polytype transition process from 4H-SiC to 6H-SiC during solution growth from the viewpoint of growth mode. The polarity dependence of the dominant grown polytype was similar to those of the sublimation growth and the CVD growth that 4H-SiC relatively grew stably on the C-face. Moreover, the polytype transition occurred during spiral growth. The 6H-SiC expanded to periphery overgrowing on the 4H-SiC. In contrast, there is no sign that 4H-SiC grew on 6H-SiC.

Point and planar defects in the iron sulfide compounds Fe1-xS

1984 ◽  
Vol 42 ◽  
pp. 434-435
Author(s):  
Thao A. Nguyen
Keyword(s):  
Low Temperatures ◽  
Direct Evidence ◽  
Iron Sulfide ◽  
Planar Defects ◽  
Selective Area ◽  
Vacancy Ordering ◽  
Different Types ◽  
Lattice Images ◽  
The Subject ◽  
Beam Lattice

It is well known that the large deviations from stoichiometry in iron sulfide compounds, Fe1-xS (0≤x≤0.125), are accommodated by iron vacancies which order and form superstructures at low temperatures. Although the ordering of the iron vacancies has been well established, the modes of vacancy ordering, hence superstructures, as a function of composition and temperature are still the subject of much controversy. This investigation gives direct evidence from many-beam lattice images of Fe1-xS that the 4C superstructure transforms into the 3C superstructure (Fig. 1) rather than the MC phase as previously suggested. Also observed are an intrinsic stacking fault in the sulfur sublattice and two different types of vacancy-ordering antiphase boundaries. Evidence from selective area optical diffractograms suggests that these planar defects complicate the diffraction pattern greatly.

The Use of Precision Selective Area Milling for Failure Analysis of Flip-Chip Packages

2002 ◽  
Author(s):  
George F. Gaut
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Solder Bump ◽  
Selective Area ◽  
Fill Material ◽  
Solder Bumps ◽  
Time Required

Abstract Access to the solder bump and under-fill material of flip-chip devices has presented a new problem for failure analysts. The under-fill and solder bumps have also added a new source for failure causes. A new tool has become available that can reduce the time required to analyze this area of a flip-chip package. By using precision selective area milling it is possible to remove material (die or PCB) that will allow other tools to expose the source of the failure.

Erratum: GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

1988 ◽  
Vol 24 (17) ◽  
pp. 1117
Author(s):  
D.A. Roberts ◽  
J.P.R. David ◽  
G. Hill ◽  
P.A. Houston ◽  
M.A. Pate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pin Diodes ◽  
Selective Area Epitaxy ◽  
Selective Area

Monolithic integration of InGaAsp/Inp lasers and heterostructure bipolar transistors by selective area epitaxy

1993 ◽  
Vol 29 (8) ◽  
pp. 645 ◽  
Author(s):  
X. An ◽  
H. Temkin ◽  
A. Feygenson ◽  
R.A. Hamm ◽  
M.A. Cotta ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Monolithic Integration ◽  
Selective Area Epitaxy ◽  
Selective Area

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth
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