Lateral Epitaxial Overgrowth of GaN on Si(111)

1998 ◽  
Author(s):  
CALIFORNIA UNIV SANTA BARBARA
Keyword(s):  
Lateral Epitaxial Overgrowth ◽  
Gan On Si

Nanoscale lateral epitaxial overgrowth of GaN on Si (111)

2005 ◽  
Vol 87 (19) ◽  
pp. 193106 ◽  
Author(s):  
K. Y. Zang ◽  
Y. D. Wang ◽  
S. J. Chua ◽  
L. S. Wang
Keyword(s):  
Lateral Epitaxial Overgrowth ◽  
Gan On Si

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

2021 ◽  
Vol 118 (24) ◽  
pp. 243501
Author(s):  
Xiaolu Guo ◽  
Yaozong Zhong ◽  
Xin Chen ◽  
Yu Zhou ◽  
Shuai Su ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Gan On Si

scholarly journals Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2316
Author(s):  
Kalparupa Mukherjee ◽  
Carlo De Santi ◽  
Matteo Borga ◽  
Karen Geens ◽  
Shuzhen You ◽  
...  
Keyword(s):  
Field Effect Transistor ◽  
Dynamic Performance ◽  
Power Conversion ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Current Analysis ◽  
Power Transistors ◽  
Trench Structure ◽  
Effect Transistor ◽  
Gan On Si

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

scholarly journals Deep Source Metal Trenches in GaN-on-Si HEMTs for Relieving Current Collapse

2021 ◽  
pp. 1-1
Author(s):  
Ji-Xuan Yang ◽  
Dai-Jie Lin ◽  
Yuh-Renn Wu ◽  
Jian-Jang Huang
Keyword(s):  
Current Collapse ◽  
Deep Source ◽  
Gan On Si

Small- and Large-Signal Dynamic Output Capacitance and Energy Loss in GaN-on-Si Power HEMTs

2021 ◽  
Vol 68 (4) ◽  
pp. 1819-1826
Author(s):  
Jia Zhuang ◽  
Grayson Zulauf ◽  
Jaume Roig-Guitart ◽  
James Plummer ◽  
Juan Rivas
Keyword(s):  
Energy Loss ◽  
Large Signal ◽  
Dynamic Output ◽  
Gan On Si ◽  
Output Capacitance ◽  
Signal Dynamic

Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT

2021 ◽  
pp. 1-8
Author(s):  
A. G. Viey ◽  
W. Vandendaele ◽  
M.-A. Jaud ◽  
L. Gerrer ◽  
X. Garros ◽  
...  
Keyword(s):  
Gan On Si
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