Sandwich fixation of electronic elements using free-standing elastomeric nanosheets for low-temperature device processes

2017 ◽  
Vol 5 (6) ◽  
pp. 1321-1327 ◽  
Author(s):  
Marin Okamoto ◽  
Mizuho Kurotobi ◽  
Shinji Takeoka ◽  
Junki Sugano ◽  
Eiji Iwase ◽  
...  
Keyword(s):  
Low Temperature ◽  
Free Standing ◽  
Packaging Films ◽  
Electronic Elements ◽  
Electronic Substrates

We fabricated free-standing, flexible and physically adhesive ultra-thin elastomeric films (nanosheets) for application as electronic substrates and packaging films.

scholarly journals Low-Temperature Synthesis of Large-Area, Free-Standing Nanorod Arrays on ITO/Glass and other Conducting Substrates

2008 ◽  
Vol 20 (23) ◽  
pp. 4470-4475 ◽  
Author(s):  
Kevin P. Musselman ◽  
Gregory J. Mulholland ◽  
Adam P. Robinson ◽  
Lukas Schmidt-Mende ◽  
Judith L. MacManus-Driscoll
Keyword(s):  
Low Temperature ◽  
Nanorod Arrays ◽  
Large Area ◽  
Free Standing ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Ito Glass

Carrier scattering in quasi-free standing graphene on hexagonal boron nitride

Nanoscale ◽  
2017 ◽  
Vol 9 (41) ◽  
pp. 15934-15944 ◽  
Author(s):  
Sun Jun Kim ◽  
Byeongho Park ◽  
Seung Hyo Noh ◽  
Hyong Seo Yoon ◽  
Juyeong Oh ◽  
...  
Keyword(s):  
Low Temperature ◽  
Boron Nitride ◽  
Radio Frequency ◽  
Hexagonal Boron Nitride ◽  
Signal Transmission ◽  
Nonlinear Characteristic ◽  
Free Standing ◽  
Frequency Signal ◽  
Radio Frequency Signal ◽  
Carrier Scattering

Graphene on h-BN showed nonlinear characteristic considerably in radio frequency signal transmission under low temperature.

scholarly journals Subtractive Low-Temperature Preparation Route for Porous SiO2 Used for the Catalyst-Assisted Growth of ZnO Field Emitters

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3357
Author(s):  
Stefanie Haugg ◽  
Carina Hedrich ◽  
Robert H. Blick ◽  
Robert Zierold
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Silicon Oxide ◽  
Direct Synthesis ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Free Standing ◽  
Field Emitters ◽  
Low Temperature Preparation ◽  
Preparation Route

The possibility to gradually increase the porosity of thin films facilitates a variety of applications, such as anti-reflective coatings, diffusion membranes, and the herein investigated tailored nanostructuring of a substrate for subsequent self-assembly processes. A low-temperature (<160 °C) preparation route for porous silicon oxide (porSiO2) thin films with porosities of about 60% and effective refractive indices down to 1.20 is tailored for bulk as well as free-standing membranes. Subsequently, both substrate types are successfully employed for the catalyst-assisted growth of nanowire-like zinc oxide (ZnO) field emitters by metal organic chemical vapor deposition. ZnO nanowires can be grown with a large aspect ratio and exhibit a good thermal and chemical stability, which makes them excellent candidates for field emitter arrays. We present a method that allows for the direct synthesis of nanowire-like ZnO field emitters on free-standing membranes using a porSiO2 template. Besides the application of porSiO2 for the catalyst-assisted growth of nanostructures and their use as field emission devices, the herein presented general synthesis route for the preparation of low refractive index films on other than bulk substrates—such as on free-standing, ultra-thin membranes—may pave the way for the employment of porSiO2 in micro-electro-mechanical systems.

Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence

2014 ◽  
Vol 778-780 ◽  
pp. 273-276
Author(s):  
Walter M. Klahold ◽  
Robert P. Devaty ◽  
Wolfgang J. Choyke ◽  
Koutarou Kawahara ◽  
Tsunenobu Kimoto ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Lifetime ◽  
Epitaxial Films ◽  
Free Standing ◽  
Lifetime Measurements ◽  
Low Temperature Photoluminescence

Ultra-pure n-type (8×1013cm-3), 99 μm thick epitaxial films of 4H SiC were electron irradiated at 170 keV with a fluence of 5×1016cm-2or at 1 MeV with a fluence of 1×1015cm-2in various geometries. Low temperature photoluminescence (LTPL) spectra and microwave photoconductance (μPCD) lifetime measurements were obtained on all samples prior to annealing and after annealing in Argon in free standing mode or on a POCO carbon platform, every 50°C from 1100°C to 1500°C. No improvement in carrier lifetime was obtained. Spurious lines attributable to the use of a Genesis CX 3550Å laser are also reported.

Sign in / Sign up

Export Citation Format

Share Document