scholarly journals Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 320 ◽  
Author(s):  
Raquel Barros ◽  
Kachirayil Saji ◽  
João Waerenborgh ◽  
Pedro Barquinha ◽  
Luís Pereira ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Spectroscopic Studies ◽  
Oxide Thin Film ◽  
Enhancement Mode ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

This work reports on the role of structure and composition on the determination of the performances of p-type SnOx TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (Opp) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies that allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used to produce p-type TFTs with saturation mobility of 4.6 cm2 V−1 s−1 and on-off ratio above 7 × 104, operating at the enhancement mode with a saturation voltage of −10 V. Moreover, a brief overview is also presented concerning the present state of the existing developments in processing SnOx TFTs with different methods and using different device configurations.

scholarly journals Role of Structure and Composition on the Performances of p-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

2019 ◽  
Author(s):  
Raquel Barros ◽  
Kachirayil J. Saji ◽  
João C. Waerenborgh ◽  
Pedro Barquinha ◽  
Luis Pereira ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Spectroscopic Studies ◽  
Oxide Thin Film ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

This work reports the role of structure and composition on the determination of the performances of p-type SnOx TFTs deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (Opp), between 0% and 20%, but where the p-type conduction was only observed between 2.8–3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies. The study allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used that lead to the production of TFTs with a bottom gate configuration, on glasses coated with conductive Indium Tin Oxide, followed by Aluminium Titanium Oxide dielectric layer with saturation mobility of 4.6 cm2V−1s−1 and on-off ratio above 7 × 104, operating at the enhancement mode with a saturation voltage of −10 V.

scholarly journals Spectroscopic Studies of Er3+-Yb3+ Codoped Multicomposition Tellurite Oxide Glass

2014 ◽  
Vol 895 ◽  
pp. 323-333 ◽  
Author(s):  
Sharudin Omar Baki ◽  
L.S. Tan ◽  
C.S. Kan ◽  
Halimah Mohamed Kamari ◽  
A.S.M. Noor ◽  
...  
Keyword(s):  
Room Temperature ◽  
Near Infrared ◽  
Transition Probabilities ◽  
Branching Ratios ◽  
Spectroscopic Studies ◽  
Oxide Glass ◽  
Near Infrared Spectra ◽  
Intensity Parameters ◽  
Measured Absorption

Multicomposition of Er3+-Yb3+codoped tellurite oxide, TeO2-ZnO-PbO-TiO2-Na2O glass has been investigated. Detailed spectroscopic study of the Judd-Ofelt analysis has been performed from the measured absorption spectrum in order to obtain the intensity parameters Ωt(t=2, 4, 6). The calculated Ωtvalues were then utilized in the determination of transition probabilities, radiative lifetimes and branching ratios of the Er3+transitions between theJ(upper)-J(lower) manifolds. Both visible upconversion and near-infrared spectra were characterized under the 980 nm laser diode excitation at room temperature.

Effect of Annealing and Gate Insulator Material Changing on the Performances of IGZO-TFT

2014 ◽  
Vol 670-671 ◽  
pp. 1467-1470
Author(s):  
Ji Feng Shi ◽  
Long Long Chen ◽  
Xiang Sun
Keyword(s):  
High Temperature ◽  
Active Layer ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Suitable Temperature ◽  
Igzo Tft

Indium-gallium-zinc oxide Thin Film Transistors (IGZO-TFT) were separately prepared with SiOx and SiNx/ SiOx as gate insulator,with IGZO films deposited at room-temperature by RF magnetron sputtering method as active layer.Compared with TFT with SiOx as gate insulator, The saturation mobility and the on/off ratio of TFT with SiNx/ SiOx as gate insulator were much higher. And,the threshold swing was also smaller.But,the threshold voltage was not good enough,was larger. By annealing at 200°C in the air,the saturation mobility increased from 1.42 to 7.5 cm2.V-1.S-1. While, the saturation mobility had no obvious change when TFT was annealed at high temperature. Seriously, IGZO annealed at high temperature would become crystal,it was not good for the ohmic contact between active layer and metal conductive layer,and,the interface between active layer and insulator would be deteriorated.These will result in the threshold swing become larger and the on/off ratio get smaller.200°C is a suitable temperature for annealing. So,using SiNx/ SiOx films as gate insulator,together with TFT annealing at low temperature, could improve the performances of TFT effectively.

Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods

2005 ◽  
Vol 108-109 ◽  
pp. 643-648 ◽  
Author(s):  
Marko Yli-Koski ◽  
Hele Savin ◽  
E. Saarnilehto ◽  
Antti Haarahiltunen ◽  
Juha Sinkkonen ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Room Temperature ◽  
Carrier Lifetime ◽  
Detection Sensitivity ◽  
Bulk Silicon ◽  
Recombination Activity ◽  
P Type ◽  
Copper Detection ◽  
Charge Carrier Lifetime

We compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates were formed in bulk silicon through illumination at room temperature. We observed that the recombination activities of copper precipitates measured with SPV are higher than the ones measured with µ−PCD technique. However, it seems that the copper detection sensitivity is about the same with SPV and µ−PCD techniques.

Crucial role of reactive pulse-gas on a sputtered Zn3N2 thin film formation

RSC Advances ◽  
2016 ◽  
Vol 6 (97) ◽  
pp. 94905-94910 ◽  
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Annop Klamchuen ◽  
Sukittaya Jessadaluk ◽  
Apirak Pankiew ◽  
...  
Keyword(s):  
Room Temperature ◽  
Film Formation ◽  
Rf Magnetron Sputtering ◽  
Energy Sources ◽  
High Quality ◽  
Additional Energy ◽  
Thin Film Formation ◽  
Reactive Pulse ◽  
Reactive Gas

Herein, we demonstrate a powerful technique, known as reactive gas-timing (RGT) rf magnetron sputtering, to fabricate high quality Zn3N2 thin films at room temperature without applying any additional energy sources.

Oxygen Sensitivity of SrFeO3-δ Thin Films Prepared by Sol-Gel Method

2007 ◽  
Vol 280-283 ◽  
pp. 315-318 ◽  
Author(s):  
Chong Liang ◽  
De An Yang ◽  
Jian Jing Song ◽  
Ming Xia Xu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Sol Gel ◽  
Alumina Substrate ◽  
Oxygen Sensitivity ◽  
Coating Film ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

Sr(NO3)2, Fe(NO3)3 and citric acid (the mole ratio was 1:1:2) were mixed in water to form sol. Alumina substrate, which had been treated by ultrasonic cleaner, were dipped in the sol and pulled out, and the coating film was heated for 1h at 900oC. Through seventeen times treatment, SrFeO3-d thin film was coated on the alumina substrate. The remainder sol was dried and heated at 400oC, 800oC, 900oC for 2 h. The thin films and the powders were characterized by XRD. The morphologies of thin films were observed by SEM. The results showed that SrFeO3-δ was formed at 900oC on alumina substrate and the grain size was 100 ~ 200 nm. The oxygen sensitivity was measured in the temperature range of 377 ~ 577oC under different oxygen partial pressures. SrFeO3-δ thin film showed p-type conduction. The response time was less than 2 min when being exposed to a change from N2 to 0.466% O2 at 377oC.

scholarly journals Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature

2020 ◽  
Vol 23 (3) ◽  
Author(s):  
Raul Ramos ◽  
Marcio Peron Franco de Godoy ◽  
Elidiane Cipriano Rangel ◽  
Nilson Cristino da Cruz ◽  
Steven F. Durrant ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
P Type ◽  
Co Doped

scholarly journals The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Ala J. Al-Douri ◽  
F. Y. Al-Shakily ◽  
Abdalla A. Alnajjar ◽  
Maysoon F. A. Alias
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Dopant Concentration ◽  
Glass Substrates ◽  
Order Of Magnitude ◽  
Cdte Thin Films ◽  
P Type ◽  
Substrate Temperatures

Films of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5) were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT& 423 K). The results showed that the conduction phenomena of all the investigated CdTe thin films on glass substrates are caused by two distinct mechanisms. Room temperature DC conductivity increases by a factor of four for undoped CdTe thin films asTsincreases and by 1-2 orders of magnitude with increasing dopant percentage of Al and Sb. In general, films doped with Sb are more efficient than Al-doped films. The activation energy (Ea2) decreases with increasingTsand dopant percentage for both Al and Sb. Undoped CdTe films deposited at RT are p-type convert to n-type with increasingTsand upon doping with Al at more than 0.5%. The carrier concentration decreases asTsincreases while it increases with increasing dopant percentage. Hall mobility decreases more than three times as Al increases whereas it increases about one order of magnitude with increasing Sb percentage in CdTe thin films deposited at 423 K and RT, respectively.

Die elektrischen Transporteigenschaften von p- und n-Cd1-ϰ Znϰ Sb für 0≦ ϰ≦ 0,5 / The Electrical Transport Properties of p- and n-Cd1-ϰZnϰSb for 0≦ϰ≦0,5

1974 ◽  
Vol 29 (12) ◽  
pp. 1874-1889
Author(s):  
W. Lehnefinke
Keyword(s):  
Electrical Transport ◽  
Room Temperature ◽  
Anomalous Behavior ◽  
Special Treatment ◽  
Electrical Transport Properties ◽  
Temperature Range ◽  
Sign Change ◽  
Semiconducting Compounds ◽  
P Type ◽  
Type Conduction

The temperature dependence of electrical resistance, Hall coefficient, and thermoelectric power has been investigated in the temperature range from 10 K to room temperature. Undoped mixed crystals of the semiconducting compounds CdSb and ZnSb show p-type conduction in the whole temperature range. To get the n-type, samples of the composition Cd1-ϰZnϰSb with 0≦ϰ≦0,5 were doped with Se and Te. All Te-doped specimens show n-type conduction. In Se-doped samples n-conduction is achieved only for ϰ = 0 and ϰ = 0.1. Some of the doped samples change to p-type conduction at lower temperatures between 130 K and 210 k. In the region of the lowest measured temperatures a second sign change occurs to negative values again. A special treatment of the samples shows that this anomalous behavior is strongly affected by surface effects. By using a simple model for the structure of the samples these effects were explained.

Record Conductivity for P-Type Transparent Conductors in Polycrystalline Thin Films of a Sulfide-Fluoride

2008 ◽  
Vol 1101 ◽  
Author(s):  
Jesse Frantz ◽  
Jasbinder S. Sanghera ◽  
Syed B. Qadri ◽  
Ishwar D. Aggarwal
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Protective Layer ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Cubic Phase ◽  
Face Centered Cubic ◽  
Polycrystalline Thin Films ◽  
Sulfur Fluoride ◽  
P Type

AbstractBarium copper sulfur fluoride thin films with a face-centered cubic phase in the Fm3m space group were synthesized via RF magnetron sputtering. The results of a detailed optical and electronic characterization of the films are presented. As-deposited, they exhibit degenerate p-type conductivity at room temperature of approximately 260 S/cm – higher than that of any previously reported p-TC. Their conductivity after post-deposition processing increases to as high as 800 S/cm. The films exhibit bandgaps ranging from 1.45-1.75 eV. They are typically deposited with a substrate temperature between room temperature and 100°C, making them suitable for deposition on plastic as well as glass or crystalline substrates. It was found that a silica protective layer reduces degradation in film transparency that is caused by exposure to air.

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