Band structure engineering in a MoS2/PbI2 van der Waals heterostructure via an external electric field

2016 ◽  
Vol 18 (41) ◽  
pp. 28466-28473 ◽  
Author(s):  
Yaqiang Ma ◽  
Xu Zhao ◽  
Tianxing Wang ◽  
Wei Li ◽  
Xiaolong Wang ◽  
...  

The band alignments and partial charge densities from the CBM and the VBM of the MoS2/PbI2 vdW heterostructure with different Efields.

2019 ◽  
Vol 21 (3) ◽  
pp. 1521-1527 ◽  
Author(s):  
Qian Zhang ◽  
Xueping Li ◽  
Tianxing Wang ◽  
Zhenduo Geng ◽  
Congxin Xia

Constructing a van der Waals heterostructure (vdWH) by stacking different two-dimensional (2D) materials has been considered to be an effective strategy to obtain the desired properties.


RSC Advances ◽  
2017 ◽  
Vol 7 (24) ◽  
pp. 14625-14630 ◽  
Author(s):  
Jimin Shang ◽  
Shuai Zhang ◽  
Xuerui Cheng ◽  
Zhongming Wei ◽  
Jingbo Li

By using first-principles calculations, we investigate the electronic properties of a ZrS2/HfS2 heterostructure modulated by an external electric field.


2015 ◽  
Vol 17 (18) ◽  
pp. 12194-12198 ◽  
Author(s):  
Run-wu Zhang ◽  
Chang-wen Zhang ◽  
Wei-xiao Ji ◽  
Feng Li ◽  
Miao-juan Ren ◽  
...  

We investigate the structural and electronic properties of germanene/germanane heterostructures. The band gap in these heterostructures can be effectively modulated by the external electric field and strain. These results provide a route to design high-performance FETs operating at room temperature in nanodevices.


2020 ◽  
Vol 8 (32) ◽  
pp. 11160-11167 ◽  
Author(s):  
Bin Zhou ◽  
Kai Jiang ◽  
Liyan Shang ◽  
Jinzhong Zhang ◽  
Yawei Li ◽  
...  

Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure and external electric field effects.


2020 ◽  
Vol 1 (6) ◽  
pp. 1849-1857
Author(s):  
Huabing Shu

Electric-field-driving effective separation of photoexcited electron–hole pairs in the P2/MoSe2 vdW heterostructure.


2020 ◽  
Vol 528 ◽  
pp. 146782 ◽  
Author(s):  
Ru Zhang ◽  
Yan Zhang ◽  
Xing Wei ◽  
Tingting Guo ◽  
Jibin Fan ◽  
...  

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