Tuning of Schottky barriers in borophene/MoS2 van der Waals heterostructure by external electric field

2019 ◽  
Author(s):  
Neha Katoch ◽  
Rajesh Thakur ◽  
Ashok Kumar ◽  
P. K. Ahluwalia ◽  
Jagdish Kumar
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Van Der Waals ◽  
Schottky Barriers ◽  
Van Der Waals Heterostructure

scholarly journals Electric field induced electronic properties modification of ZrS2/HfS2 van der Waals heterostructure

RSC Advances ◽  
2017 ◽  
Vol 7 (24) ◽  
pp. 14625-14630 ◽  
Author(s):  
Jimin Shang ◽  
Shuai Zhang ◽  
Xuerui Cheng ◽  
Zhongming Wei ◽  
Jingbo Li
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
First Principles ◽  
Van Der Waals ◽  
First Principles Calculations ◽  
Van Der Waals Heterostructure

By using first-principles calculations, we investigate the electronic properties of a ZrS2/HfS2 heterostructure modulated by an external electric field.

Tunable electronic properties in the van der Waals heterostructure of germanene/germanane

2015 ◽  
Vol 17 (18) ◽  
pp. 12194-12198 ◽  
Author(s):  
Run-wu Zhang ◽  
Chang-wen Zhang ◽  
Wei-xiao Ji ◽  
Feng Li ◽  
Miao-juan Ren ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
External Electric Field ◽  
High Performance ◽  
Room Temperature ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure ◽  
Structural And Electronic Properties

We investigate the structural and electronic properties of germanene/germanane heterostructures. The band gap in these heterostructures can be effectively modulated by the external electric field and strain. These results provide a route to design high-performance FETs operating at room temperature in nanodevices.

Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure

2020 ◽  
Vol 8 (32) ◽  
pp. 11160-11167 ◽  
Author(s):  
Bin Zhou ◽  
Kai Jiang ◽  
Liyan Shang ◽  
Jinzhong Zhang ◽  
Yawei Li ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Van Der Waals ◽  
Electric Field Effects ◽  
Field Effects ◽  
Van Der Waals Heterostructure ◽  
Carrier Separation

Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure and external electric field effects.

Type-II band alignment AlN/InSe van der Waals heterostructure: Vertical strain and external electric field

2020 ◽  
Vol 528 ◽  
pp. 146782 ◽  
Author(s):  
Ru Zhang ◽  
Yan Zhang ◽  
Xing Wei ◽  
Tingting Guo ◽  
Jibin Fan ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

scholarly journals Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Yu Lan ◽  
Li-Xin Xia ◽  
Tao Huang ◽  
Weiping Xu ◽  
Gui-Fang Huang ◽  
...  
Keyword(s):  
Electric Field ◽  
High Performance ◽  
Schottky Barrier Height ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Schottky Contact ◽  
Schottky Barriers ◽  
Effective Strategies ◽  
Van Der Waals Heterostructure ◽  
Metal Dichalcogenides

Abstract Two-dimensional (2D) transition metal dichalcogenides with intrinsically passivated surfaces are promising candidates for ultrathin optoelectronic devices that their performance is strongly affected by the contact with the metallic electrodes. Herein, first-principle calculations are used to construct and investigate the electronic and interfacial properties of 2D MoTe2 in contact with a graphene electrode by taking full advantage of them. The obtained results reveal that the electronic properties of graphene and MoTe2 layers are well preserved in heterostructures due to the weak van der Waals interlayer interaction, and the Fermi level moves toward the conduction band minimum of MoTe2 layer thus forming an n type Schottky contact at the interface. More interestingly, the Schottky barrier height and contact types in the graphene-MoTe2 heterostructure can be effectively tuned by biaxial strain and external electric field, which can transform the heterostructure from an n type Schottky contact to a p type one or to Ohmic contact. This work provides a deeper insight look for tuning the contact types and effective strategies to design high performance MoTe2-based Schottky electronic nanodevices.

Band structure engineering in a MoS2/PbI2 van der Waals heterostructure via an external electric field

2016 ◽  
Vol 18 (41) ◽  
pp. 28466-28473 ◽  
Author(s):  
Yaqiang Ma ◽  
Xu Zhao ◽  
Tianxing Wang ◽  
Wei Li ◽  
Xiaolong Wang ◽  
...  
Keyword(s):  
Band Structure ◽  
Electric Field ◽  
External Electric Field ◽  
Van Der Waals ◽  
Partial Charge ◽  
Charge Densities ◽  
Van Der Waals Heterostructure ◽  
Band Alignments ◽  
Vdw Heterostructure ◽  
Structure Engineering

The band alignments and partial charge densities from the CBM and the VBM of the MoS2/PbI2 vdW heterostructure with different Efields.

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