scholarly journals A type-II blue phosphorus/MoSe2 van der Waals heterostructure: improved electronic and optical properties via vertical electric field

2020 ◽  
Vol 1 (6) ◽  
pp. 1849-1857
Author(s):  
Huabing Shu
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Van Der Waals ◽  
Type Ii ◽  
Electron Hole ◽  
Photoexcited Electron ◽  
Effective Separation ◽  
Van Der Waals Heterostructure ◽  
Vertical Electric Field ◽  
Vdw Heterostructure

Electric-field-driving effective separation of photoexcited electron–hole pairs in the P2/MoSe2 vdW heterostructure.

A first-principles study on the electronic and optical properties of a type-II C2N/g-ZnO van der Waals heterostructure

2021 ◽  
Vol 23 (6) ◽  
pp. 3963-3973
Author(s):  
Jianxun Song ◽  
Hua Zheng ◽  
Minxia Liu ◽  
Geng Zhang ◽  
Dongxiong Ling ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dft Calculations ◽  
First Principles ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.

Tunable band offsets in the BP/P4O10 van der Waals heterostructure: first-principles calculations

2018 ◽  
Vol 20 (47) ◽  
pp. 29931-29938 ◽  
Author(s):  
Wenzhen Dou ◽  
Anping Huang ◽  
Hongliang Shi ◽  
Xinjiang Zhang ◽  
Xiaohu Zheng ◽  
...  
Keyword(s):  
First Principles ◽  
Van Der Waals ◽  
First Principles Calculations ◽  
Electron Hole ◽  
Photoexcited Electron ◽  
Band Offsets ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The separation of photoexcited electron–hole pairs in the BP/P4O10 vdW heterostructure.

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

Electric field effects on the electronic and optical properties in C2N/Sb van der Waals heterostructure

Carbon ◽  
2018 ◽  
Vol 129 ◽  
pp. 738-744 ◽  
Author(s):  
Xiaolong Wang ◽  
Ruge Quhe ◽  
Wei Cui ◽  
Yusong Zhi ◽  
Yuanqi Huang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Van Der Waals ◽  
Electric Field Effects ◽  
Electronic And Optical Properties ◽  
Field Effects ◽  
Van Der Waals Heterostructure

scholarly journals Tuning Electronic Properties of GaSe/Silicane Van der Waals Heterostructure by External Electric Field and Strain: A First-Principle Study

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Gang Xu ◽  
Hao Lei
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type I ◽  
First Principle ◽  
Type Ii ◽  
Direct Band Gap ◽  
Direct Band ◽  
Vdw Heterostructure

The electronic structure of GaSe/silicane (GaSe/SiH) van der Waals (vdW) heterostructure in response to a vertical electric field and strain was studied via first-principle calculations. The heterostructure had indirect band gap characteristics in the range [−1.0, −0.4] V/Å and direct band gap features in the range [−0.3, 0.2] V/Å. Furthermore, a type-II to type-I band alignment transition appeared at −0.7 and −0.3 V/Å. Additionally, the GaSe/SiH vdW heterostructure had a type-II band alignment under strain, but an indirect to direct band gap semiconductor transition occurred at −3%. These results indicated that the GaSe/SiH vdW heterostructure may have applications in novel nanoelectronic and optoelectronic devices.

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