Surface charge transfer doping induced inversion layer for high-performance graphene/silicon heterojunction solar cells

2017 ◽  
Vol 5 (1) ◽  
pp. 285-291 ◽  
Author(s):  
Ke Ding ◽  
Xiujuan Zhang ◽  
Feifei Xia ◽  
Rongbin Wang ◽  
Yawei Kuang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transfer ◽  
Surface Charge ◽  
High Performance ◽  
Inversion Layer ◽  
Heterojunction Solar Cells ◽  
Device Efficiency ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

Surface charge transfer doping (SCTD) induced p-type inversion layer was implemented in the graphene/silicon heterojunction solar cells, leading to significant improvement of device efficiency.

scholarly journals Insights into the role of the interface defects density and the bandgap of the back surface field for efficient p-type silicon heterojunction solar cells

RSC Advances ◽  
2017 ◽  
Vol 7 (43) ◽  
pp. 26776-26782 ◽  
Author(s):  
Fengyou Wang ◽  
Yanbo Gao ◽  
Zhenyu Pang ◽  
Lili Yang ◽  
Jinghai Yang
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Back Surface ◽  
Back Surface Field ◽  
Heterojunction Solar Cells ◽  
Interface Defects ◽  
Surface Field ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

Interface defects and the back surface field of p-type heterojunction solar cells are investigated for achieving high performance.

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

Semiconducting Polymer and Hydrogenated Amorphous Silicon Heterojunction Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. R. Middya ◽  
Eric A. Schiff
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Photovoltaic Effect ◽  
Hydrogenated Amorphous Silicon ◽  
Hybrid Solar Cells ◽  
Semiconducting Polymer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Silicon Heterojunction Solar Cells

ABSTRACTIn this work, we report on investigation of p-type semiconducting polymer, {poly(3,4 polyethylenedioxythiophene)-poly(styrenesulfonate)} (PEDOT:PSS) as the p-layer in NIP and PIN hydrogenated amorphous silicon (a-Si:H) solar cells. The rectification ratio of solution-casted diode is ∼ 10, it increases to 3×104 when PEDOT:PSS is deposited by Spin Coating technique. We observed additional photovoltaic effect when light is illuminated through polymer side. So far, best solar cells characteristics observed for PEDOT:PSS/a-Si:H hybrid solar cells are Voc ≈ 720 mV and Jsc ≈ 1 - 2 mA/cm2.

High performance organic/20μm crystalline-silicon heterojunction solar cells

2015 ◽  
Vol 2 (6) ◽  
pp. 065902 ◽  
Author(s):  
Jian He ◽  
Pingqi Gao ◽  
Jiang Sheng ◽  
Xi Yang ◽  
Suqiong Zhou ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Crystalline Silicon ◽  
Heterojunction Solar Cells ◽  
Silicon Heterojunction Solar Cells

scholarly journals Contact Resistivity of the p-Type Amorphous Silicon Hole Contact in Silicon Heterojunction Solar Cells

2020 ◽  
Vol 10 (1) ◽  
pp. 54-62 ◽  
Author(s):  
Mehdi Leilaeioun ◽  
William Weigand ◽  
Mathieu Boccard ◽  
Zhengshan J. Yu ◽  
Kathryn Fisher ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Contact Resistivity ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells
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