Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures

ACS Nano ◽  
2016 ◽  
Vol 10 (11) ◽  
pp. 10283-10293 ◽  
Author(s):  
Feifei Xia ◽  
Zhibin Shao ◽  
Yuanyuan He ◽  
Rongbin Wang ◽  
Xiaofeng Wu ◽  
...  
2009 ◽  
Vol 10 (5) ◽  
pp. 932-938 ◽  
Author(s):  
Michael Kröger ◽  
Sami Hamwi ◽  
Jens Meyer ◽  
Thomas Riedl ◽  
Wolfgang Kowalsky ◽  
...  

1995 ◽  
Vol 401 ◽  
Author(s):  
J. J. M. Pothuizen ◽  
O. Cohen ◽  
G. A. Sawatzky

AbstractIn this paper, we discuss the change in the band gap of charge transfer insulators for different surface terminations. We have calculated the Madelung potential of the unreconstructed (100) surfaces of the rocksalt structured TM-O compounds (TM = Mn, Fe, Co and Ni). We also considered possible step defects on a (100) surface. The presented results are calculated in both the purely ionic case (TM2+O2−) and in the strong ligand p - cation 4s, phybridization (TM1+O1−) case. In both cases the charge transfer gap, Δ, for the surface is reduced compared to the bulk value. As a consequence of this reduction there is a large increase of the surface superexchange interaction, Jsur, and a decrease of the band gap.


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