scholarly journals Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

RSC Advances ◽  
2015 ◽  
Vol 5 (47) ◽  
pp. 37881-37886 ◽  
Author(s):  
Duo Cao ◽  
Xinhong Cheng ◽  
Ya-Hong Xie ◽  
Li Zheng ◽  
Zhongjian Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Temperature Annealing ◽  
Aln Film

AlN films are grown on AlGaN/GaN by PEALD. High-temperature annealing promotes complete nitridation of AlN film, and causes AlN to form a semiconductor-like structure.

Thermal Donor Removal by Rapid Thermal Annealing: Infrared Absorption

1985 ◽  
Vol 46 ◽  
Author(s):  
Herman J. Stein ◽  
S. K. Hahn ◽  
S. C. Shatas
Keyword(s):  
Excited State ◽  
High Temperature ◽  
Excited States ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Infrared Absorption ◽  
Excited State Absorption ◽  
Thermal Donor ◽  
Oxygen Cluster ◽  
Oxygen Precipitates

AbstractRapid thermal annealing of thermal donors in Si with 10 sec anneal times at temperatures between 600 and 1000 °C has been investigated by infrared absorption at 80 K. Thermal donors A through D, which are identified by excited state absorption, are present in as-grown Czochralski Si; whereas excited states for donors A through F as well as photoionization of thermal donors are observed after extended heating at 450 °C. The temperature required for rapid thermal annealing is lower when only donors A through D are present. Removal of thermal donors A through F by rapid thermal annealing at temperatures > 800°C restores 7 to 8 oxygen atoms to interstitial sites per electricallӯ measured donor removed. This ratio supports oxygen cluster models for thermal donors but does not support previous suggestions that such clusters are embryonic forms of high temperature oxygen precipitates.

Study of GaN thin layers subjected to high-temperature rapid thermal annealing

1998 ◽  
Vol 32 (10) ◽  
pp. 1048-1053 ◽  
Author(s):  
N. I. Katsavets ◽  
G. M. Laws ◽  
I. Harrison ◽  
E. C. Larkins ◽  
T. M. Benson ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Layers ◽  
Temperature Rapid Thermal Annealing

Morphology and photoluminescence improvements from high‐temperature rapid thermal annealing of GaN

1996 ◽  
Vol 68 (2) ◽  
pp. 200-202 ◽  
Author(s):  
J. C. Zolper ◽  
M. Hagerott Crawford ◽  
A. J. Howard ◽  
J. Ramer ◽  
S. D. Hersee
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing

High Temperature Annealing SP-AlN Ameliorates the Crystal Quality ofAl0.5Ga0.5N Regrowth

2020 ◽  
Vol 1014 ◽  
pp. 14-21
Author(s):  
Wen Kai Yue ◽  
Zhi Min Li ◽  
Xiao Wei Zhou ◽  
Jin Xing Wu ◽  
Pei Xian Li
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Annealing Process ◽  
High Temperature Annealing ◽  
High Quality ◽  
Rocking Curve ◽  
Stress Mode ◽  
Aln Film ◽  
Before And After ◽  
Screw Dislocation Density

In this study, the effect of a high-temperature annealing process on AlN is investigated. The high-temperature annealing process reduces the screw dislocation density of the AlN film to 2.1x107 cm-2. The AlN surface is highly flat. Through HRXRD and Raman spectroscopy, the stress mode changes in the sputtered AlN film before and after high-temperature annealing were studied in depth. Based on the HTA-AlN template, a high-quality, high-Al composition AlGaN epitaxial wafer, with a (0002) plane rocking curve FWHM of 246 arcsec , was prepared at 1080°C The growth mode of AlGaN grown directly on the AlN template at low temperature is summarized.

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