Stability in peak emission wavelength in strain-coupled multilayer InAs/GaAs quantum dot heterostructures when subjected to high-temperature rapid thermal annealing

2015 ◽  
Author(s):  
Saikalash Shetty ◽  
Sourav Adhikary ◽  
Hemant Ghadi ◽  
Subhananda Chakrabarti
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Emission Wavelength ◽  
Peak Emission Wavelength ◽  
Temperature Rapid Thermal Annealing ◽  
Gaas Quantum Dot ◽  
Peak Emission

Study of GaN thin layers subjected to high-temperature rapid thermal annealing

1998 ◽  
Vol 32 (10) ◽  
pp. 1048-1053 ◽  
Author(s):  
N. I. Katsavets ◽  
G. M. Laws ◽  
I. Harrison ◽  
E. C. Larkins ◽  
T. M. Benson ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Layers ◽  
Temperature Rapid Thermal Annealing

Morphology and photoluminescence improvements from high‐temperature rapid thermal annealing of GaN

1996 ◽  
Vol 68 (2) ◽  
pp. 200-202 ◽  
Author(s):  
J. C. Zolper ◽  
M. Hagerott Crawford ◽  
A. J. Howard ◽  
J. Ramer ◽  
S. D. Hersee
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing

scholarly journals Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

2006 ◽  
Vol 99 (11) ◽  
pp. 114517 ◽  
Author(s):  
L. Fu ◽  
H. H. Tan ◽  
I. McKerracher ◽  
J. Wong-Leung ◽  
C. Jagadish ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors ◽  
Gaas Quantum Dot

Multi-Cycle High Temperature Rapid Thermal Annealing for Dislocation Elimination in 4H-SiC Epitaxy

2014 ◽  
Vol 64 (7) ◽  
pp. 35-39
Author(s):  
N. A. Mahadik ◽  
M. J. Tadjer ◽  
R. E. Stahlbush ◽  
E. A. Imhoff ◽  
B. Feigelson
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing
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