Influence of Mn dopants on the structure and multiferroic properties of a Bi0.90Ho0.10FeO3 thin film

RSC Advances ◽  
2015 ◽  
Vol 5 (54) ◽  
pp. 43594-43600 ◽  
Author(s):  
Wei Ye ◽  
Guoqiang Tan ◽  
Xia Yan ◽  
Huijun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Multiferroic Properties

Mn substituted Bi0.90Ho0.10FeO3 (BHFO) thin films having the compositions Bi0.90Ho0.10Fe1−xMnxO3 (BHFMO) (x = 0, 0.01, 0.03, 0.05) were synthesized via chemical solution deposition.

scholarly journals Effect of annealing atmosphere on LiMn2O4 for thin film Li-ion batteries from aqueous chemical solution deposition

2016 ◽  
Vol 4 (47) ◽  
pp. 18457-18469 ◽  
Author(s):  
G. Maino ◽  
J. D'Haen ◽  
F. Mattelaer ◽  
C. Detavernier ◽  
A. Hardy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Solution Deposition ◽  
Annealing Atmosphere ◽  
Li Ion Batteries ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Current Collectors ◽  
Li Ion

Aqueous CSD provides LMO thin films at low T in a N2 ambient, eliminating issues with stacking and sensitive current collectors.

Preparation of (La,Sr)MnO3 Thin Film by Chemical Solution Deposition

2013 ◽  
Vol 566 ◽  
pp. 187-190
Author(s):  
Keiichi Sasajima ◽  
Hiroshi Uchida
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Silicon Substrate ◽  
Chemical Solution Deposition ◽  
Buffer Layers ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Ferroelectric Capacitor ◽  
Lower Electrical Resistivity

Thin films of (La,Sr)MnO3 (LSMO) were fabricated by industrial-versatile chemical solution deposition (CSD) technique. Well [100]-oriented LSMO films were fabricated at 650-750 °C by use of buffer layers of LaNiO3 buffer layer on a silicon substrate. The product of lower electrical resistivity is promising as an electrode of fatigue-free ferroelectric capacitor.

Multiferroic properties of BiFeO3/Bi4Ti3O12 double-layered thin films fabricated by chemical solution deposition

2009 ◽  
Vol 517 (24) ◽  
pp. 6737-6741 ◽  
Author(s):  
Seung Woo Yi ◽  
Sang Su Kim ◽  
Jin Won Kim ◽  
Hyun Kyung Jo ◽  
Dalhyun Do ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Multiferroic Properties

Epitaxial growth of PbZr0.5Ti0.5O3 thin films on SrRuO3/SrTiO3 substrates using chemical solution deposition: Microstructural and ferroelectric properties

2001 ◽  
Vol 16 (6) ◽  
pp. 1739-1744 ◽  
Author(s):  
J. H. Kim ◽  
Youngman Kim ◽  
A. T. Chien ◽  
F. F. Lange
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method ◽  
Pzt Thin Film ◽  
Film Substrate

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at various temperatures. The microstructure of the PZT thin films was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. In the PZT thin film annealed at low temperature (450 °C/1h), both the perovskite PZT phase at the film/substrate interface and the fluorite PZT phase in the upper region of the film were obtained. It exhibited nonferroelectric properties. The PZT thin film annealed at temperature as low as 525 °C had only a perovskite tetragonal phase and the epitaxial orientational relationship of (001)[010]PZT∥(001)[010]SRO∥(001)[010]STOwith the substrate, and shows a ferroelectric property. The remnant (Pr) and saturation polarization (Ps) density of the sample annealed at 600 °C/1h were measured to be Pr ˜ 51.4 μC/cm2 and Ps ˜ 62.1 μC/cm2 at 5 V, respectively. The net switched polarization dropped only to 98% of its initial value after 7 × 108 fatigue cycles.

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