Dielectric properties of (Ba,Sr)TiO3 thin films with varied microstructures prepared by the chemical solution deposition method for thin-film capacitors and ferroelectric varactors

2010 ◽  
Vol 57 (10) ◽  
pp. 2198-2204 ◽  
Author(s):  
K Kageyama ◽  
T Hosokura ◽  
T Nakaiso ◽  
H Takagi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Chemical Solution Deposition ◽  
Deposition Method ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Thin Film Capacitors ◽  
Ferroelectric Varactors

Epitaxial growth of PbZr0.5Ti0.5O3 thin films on (001) LaAlO3 by the chemical solution deposition method

1999 ◽  
Vol 14 (10) ◽  
pp. 4004-4010 ◽  
Author(s):  
J. H. Kim ◽  
F. F. Lange
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Driving Force ◽  
Fluorite Phase ◽  
Deposition Method ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Boundary Area ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on (001) LaAlO3 substrates (∼6.1% lattice mismatch) by the chemical solution deposition method. The sequence of epitaxy during heating between 375 and 700 °C/1h was characterized by x-ray diffraction and transmission electron microscopy. At approximately 375 °C/1h, a nanocrystalline metastable fluorite phase of PZT was formed from the pyrolyzed amorphous precursor. At higher temperatures (400–425 °C/1h), thermodynamically stable PZT crystallites were first observed at the interface; with increasing higher temperatures, these nuclei grew across the interface and through the film toward the surface by consuming the metastable nanocrystalline fluorite grains. PZT thin films annealed above ∼500 °C/1h were observed to be dense with an epitaxial orientation relationship of [100](001)PZT‖[100](001)LAO. The metastable nanocrystalline fluorite to the stable single-crystal perovskite transformation gives an extra driving force by providing an additional decrease in free energy in addition to a driving force from the elimination of grain boundary area for epitaxy.

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