Band engineering via biaxial strain for enhanced thermoelectric performance in stannite-type Cu2ZnSnSe4

RSC Advances ◽  
2015 ◽  
Vol 5 (32) ◽  
pp. 24908-24914 ◽  
Author(s):  
Daifeng Zou ◽  
Guozheng Nie ◽  
Yu Li ◽  
Ying Xu ◽  
Jianguo Lin ◽  
...  
Keyword(s):  
Fermi Level ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Biaxial Strain ◽  
Band Engineering ◽  
Valence Bands

The enhancement of the thermoelectric properties of stannite-type Cu2ZnSnSe4 under biaxial strain can be ascribed to band convergence of the valence bands near the Fermi level.

High-Temperature Thermoelectric Properties of Pb1-xSnxTe:In

2007 ◽  
Vol 1044 ◽  
Author(s):  
Vladimir Jovovic ◽  
Suraj Joottu Thiagarajan ◽  
Joseph P. Heremans ◽  
Dmitry Khokhlov ◽  
Tanya Komissarova ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Fermi Level ◽  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Temperature Dependent ◽  
Resonant Energy ◽  
Properties Of Materials ◽  
Valence Bands ◽  
Increasing Temperature ◽  
Positive Effect

AbstractIndium in Pb1-xSnxTe alloys forms a resonant energy level in the conduction or valence bands, depending on x. In this study we investigate temperature dependence of the In level from 80 to 400K, complementing our previous work at 80 K. Measurements of electrical resistivity, thermopower, Hall and transverse Nernst-Ettinghausen effect are used to assess carrier mobility, Fermi level and scattering coefficient. Measurements are performed on a set of p and n type Pb1-xSnxTe:In with 0 < x < 30 at% and In up to 3 at%. We show that with increasing temperature the Fermi level crosses into the gap. It had been suggested theoretically that hybridization of the In level with one band at the Fermi level could have had a positive effect on the thermoelectric properties of materials, but the present results illustrate the need for temperature-dependent modeling and experimentation.

scholarly journals Fermi level tuning in modified Bi2Te3 system for thermoelectric applications

RSC Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 4539-4546
Author(s):  
P. Shyni ◽  
P. P. Pradyumnan
Keyword(s):  
Fermi Level ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Level Shift ◽  
Fermi Level Shift

The thermoelectric properties of Bi2Te3 system can be modified by Fermi level tuning using the methods of nanostructuring and doping. Fermi level shift contribute to better thermoelectric performance of the material, leading to two-fold improvement in figure of merit.

Extraordinary thermoelectric performance of NaBaBi with degenerate and highly non-parabolic bands compared to LiBaSb and Bi2Te3

2021 ◽  
Author(s):  
Enamul Haque
Keyword(s):  
Fermi Level ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.

Boosting the thermoelectric performance of Fe2VAl−type Heusler compounds by band engineering

2021 ◽  
Vol 103 (8) ◽  
Author(s):  
F. Garmroudi ◽  
A. Riss ◽  
M. Parzer ◽  
N. Reumann ◽  
H. Müller ◽  
...  
Keyword(s):  
Thermoelectric Performance ◽  
Heusler Compounds ◽  
Band Engineering

Biaxial strain-induced enhancement in the thermoelectric performance of monolayer WSe 2

2017 ◽  
Vol 26 (11) ◽  
pp. 117202 ◽  
Author(s):  
Wanhuizi Shen ◽  
Daifeng Zou ◽  
Guozheng Nie ◽  
Ying Xu
Keyword(s):  
Thermoelectric Performance ◽  
Biaxial Strain

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

Rational band engineering and structural manipulations inducing high thermoelectric performance in n-type CoSb3 thin films

Nano Energy ◽  
2021 ◽  
Vol 81 ◽  
pp. 105683
Author(s):  
Zhuang-Hao Zheng ◽  
Xiao-Lei Shi ◽  
Dong-Wei Ao ◽  
Wei-Di Liu ◽  
Yue-Xing Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Performance ◽  
Band Engineering

Significantly optimized thermoelectric properties in high-symmetry cubic Cu7PSe6 compounds via entropy engineering

2018 ◽  
Vol 6 (15) ◽  
pp. 6493-6502 ◽  
Author(s):  
Rui Chen ◽  
Pengfei Qiu ◽  
Binbin Jiang ◽  
Ping Hu ◽  
Yiming Zhang ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Configurational Entropy ◽  
Thermoelectric Performance ◽  
High Symmetry ◽  
Type Compound

Via introducing Te into the argyrodite-type compound Cu7PSe6, the configurational entropy is increased yielding the significantly enhanced thermoelectric performance.

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