Fermi level tuning in modified Bi2Te3 system for thermoelectric applications

The thermoelectric properties of Bi2Te3 system can be modified by Fermi level tuning using the methods of nanostructuring and doping. Fermi level shift contribute to better thermoelectric performance of the material, leading to two-fold improvement in figure of merit.

pH-Responsive carbon dots with red emission for real-time and visual detection of amines

The pH-responsive emission of R-CDs with H-aggregation and Fermi level shift has been applied in the real-time and visual detection of amines.

Disorder compensation controls doping efficiency in organic semiconductors

Conductivity doping of inorganic and organic semiconductors enables a fantastic variety of highly-efficient electronic devices. While well understood for inorganic materials, the mechanism of doping-induced conductivity and Fermi level shift in organic semiconductors remains elusive. In microscopic simulations with full treatment of many-body Coulomb effects, we reproduce the Fermi level shift in agreement with experimental observations. We find that the additional disorder introduced by doping can actually compensate the intrinsic disorder of the material, such that the total disorder remains constant or is even reduced at doping molar ratios relevant to experiment. In addition to the established dependence of the doping-induced states on the Coulomb interaction in the ionized host-dopant pair, we find that the position of the Fermi level and electrical conductivity is controlled by disorder compensation. By providing a quantitative model for doping in organic semiconductors we enable the predictive design of more efficient redox pairs.

Electrical modulation of a photonic crystal band-edge laser with a graphene monolayer

Electrical modulation of a photonic crystal band-edge laser output via the Fermi level shift in graphene is demonstrated.