scholarly journals Fermi level tuning in modified Bi2Te3 system for thermoelectric applications

RSC Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 4539-4546
Author(s):  
P. Shyni ◽  
P. P. Pradyumnan
Keyword(s):  
Fermi Level ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Level Shift ◽  
Fermi Level Shift

The thermoelectric properties of Bi2Te3 system can be modified by Fermi level tuning using the methods of nanostructuring and doping. Fermi level shift contribute to better thermoelectric performance of the material, leading to two-fold improvement in figure of merit.

Extraordinary thermoelectric performance of NaBaBi with degenerate and highly non-parabolic bands compared to LiBaSb and Bi2Te3

2021 ◽  
Author(s):  
Enamul Haque
Keyword(s):  
Fermi Level ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

Band engineering via biaxial strain for enhanced thermoelectric performance in stannite-type Cu2ZnSnSe4

RSC Advances ◽  
2015 ◽  
Vol 5 (32) ◽  
pp. 24908-24914 ◽  
Author(s):  
Daifeng Zou ◽  
Guozheng Nie ◽  
Yu Li ◽  
Ying Xu ◽  
Jianguo Lin ◽  
...  
Keyword(s):  
Fermi Level ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Biaxial Strain ◽  
Band Engineering ◽  
Valence Bands

The enhancement of the thermoelectric properties of stannite-type Cu2ZnSnSe4 under biaxial strain can be ascribed to band convergence of the valence bands near the Fermi level.

Contribution of the Fermi Level Shift to the Low Temperature Magnetoresistance in α-Si:H

1982 ◽  
Vol 113 (1) ◽  
pp. K39-K42 ◽  
Author(s):  
P. Kuivalainen ◽  
J. Heleskivi ◽  
M. Leppihalme
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Level Shift ◽  
Fermi Level Shift

Fermi Level Shift in Photoconductive Organic Pigment Films Measured by Kelvin Vibrating Capacitor Method

1995 ◽  
Vol 34 (Part 1, No. 7B) ◽  
pp. 3803-3807 ◽  
Author(s):  
Masahiro Hiramoto ◽  
Kiyoaki Ihara ◽  
Masaaki Yokoyama
Keyword(s):  
Fermi Level ◽  
Level Shift ◽  
Organic Pigment ◽  
Fermi Level Shift

High energy photon induced Fermi-level shift of Ba 0.5 Sr 0.5 TiO 3 thin films

2017 ◽  
Vol 639 ◽  
pp. 107-112 ◽  
Author(s):  
Surendra Singh Barala ◽  
Vijendra Singh Bhati ◽  
Mahesh Kumar
Keyword(s):  
Thin Films ◽  
Fermi Level ◽  
High Energy ◽  
Level Shift ◽  
High Energy Photon ◽  
Energy Photon ◽  
Fermi Level Shift
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