Highly efficient photovoltaics and field-effect transistors based on copolymers of mono-fluorinated benzothiadiazole and quaterthiophene: synthesis and effect of the molecular weight on device performance

2015 ◽  
Vol 6 (33) ◽  
pp. 6050-6057 ◽  
Author(s):  
Minghui Hao ◽  
Xiaodong Li ◽  
Keli Shi ◽  
Dongjun Xie ◽  
Xuan Zeng ◽  
...  

A D–A conjugated polymer based on mono-fluorinated benzothiadiazole (FBT) was designed and synthesized, and high performance photovoltaics and FETs were achieved.

ACS Nano ◽  
2015 ◽  
Vol 9 (5) ◽  
pp. 5264-5274 ◽  
Author(s):  
Hyun Ah Um ◽  
Dae Hee Lee ◽  
Dong Uk Heo ◽  
Da Seul Yang ◽  
Jicheol Shin ◽  
...  

Nanoscale ◽  
2020 ◽  
Vol 12 (28) ◽  
pp. 15443-15452
Author(s):  
Ying Guo ◽  
Feng Pan ◽  
Gaoyang Zhao ◽  
Yajie Ren ◽  
Binbin Yao ◽  
...  

ML GeSe field-effect transistors have an excellent device performance, even at the 1 nm gate-length. The on-state current of the devices can fulfill the requirements of the International Technology Roadmap for Semiconductors (2013 version).


2005 ◽  
Vol 871 ◽  
Author(s):  
Nenad Marjanović ◽  
Th. B. Singh ◽  
Serap Günes ◽  
Helmut Neugebauer ◽  
Niyazi Serdar Sariciftci

AbstractPhotoactive organic field-effect transistors, photOFETs, based on a conjugated polymer/fullerene blend, MDMO-PPV: PCBM (1:4), and polymeric dielectrics as polyvinylalcohol (PVA) or divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) with top source and drain electrodes were fabricated and characterized in dark and under AM1.5 illumination. With LiF/Al as top source and drain contacts the devices feature n-type transistor behavior in dark with electron mobility of 10-2cm2/Vs. Under illumination, a large free carrier concentration from photo-induced charge transfer at the polymer/fullerene bulk heterojunction (photodoping) is created. The device performance was studied with different illumination intensities and showed to be strongly influenced by the nature of the organic dielectric/organic semiconductor interface resulting in phototransistor behavior in BCB-based photOFETs and in phototransistor or photoresistor behavior for PVA-based photOFETs.


Nanoscale ◽  
2018 ◽  
Vol 10 (41) ◽  
pp. 19427-19434 ◽  
Author(s):  
Youchao Cui ◽  
You Meng ◽  
Zhen Wang ◽  
Chunfeng Wang ◽  
Guoxia Liu ◽  
...  

An amine-hardened epoxy resin was selected as adhesion agent to weld nanofiber and improve the adhesion performance, resulting in low contact-resistance nanofiber networks (NFNs). The field-effect transistors based on In2O3 NFNs/SiO2 exhibit high device performance.


2016 ◽  
Vol 7 (1) ◽  
pp. 164-170 ◽  
Author(s):  
Guitao Feng ◽  
Yunhua Xu ◽  
Chengyi Xiao ◽  
Jianqi Zhang ◽  
Xiaotao Zhang ◽  
...  

A highly crystalline conjugated polymer incorporating two electron-deficient units was applied in high performance organic field-effect transistors and polymer solar cells.


2018 ◽  
Vol 6 (20) ◽  
pp. 5497-5505 ◽  
Author(s):  
Dong-Hyeon Lee ◽  
Minji Kang ◽  
Dae-Hee Lim ◽  
Yunseul Kim ◽  
Jiyoul Lee ◽  
...  

Simultaneous enhancement of both charge density and favourable molecular stacking order by the incorporation of a molecular dopant in π-conjugated polymer.


2018 ◽  
Vol 6 (7) ◽  
pp. 1774-1779 ◽  
Author(s):  
Xianfeng Liang ◽  
Wandong Sun ◽  
Yanlin Chen ◽  
Luxi Tan ◽  
Zhengxu Cai ◽  
...  

A vinyl flanked conjugated polymer PTFBTV exhibits a hole mobility up to 2.0 cm2 V−1 s−1 containing possible C–H⋯F hydrogen bonds


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