Controllable growth and optical properties of ZnO nanostructures on Si nanowire arrays

CrystEngComm ◽  
2011 ◽  
Vol 13 (7) ◽  
pp. 2439 ◽  
Author(s):  
Luwei Sun ◽  
Haiping He ◽  
Chao Liu ◽  
Yangfan Lu ◽  
Zhizhen Ye
2016 ◽  
Vol 380 (9-10) ◽  
pp. 1044-1048 ◽  
Author(s):  
Qianqian Yang ◽  
Dingguo Li ◽  
Binbin Yu ◽  
Shengli Huang ◽  
Jiayuan Wang ◽  
...  

Nanoscale ◽  
2016 ◽  
Vol 8 (4) ◽  
pp. 2177-2187 ◽  
Author(s):  
Tandra Ghoshal ◽  
Christos Ntaras ◽  
John O'Connell ◽  
Matthew T. Shaw ◽  
Justin D. Holmes ◽  
...  

2012 ◽  
Vol 2 (1) ◽  
pp. 83-84
Author(s):  
Pavan Naik ◽  
◽  
Dr. R B. lohani Dr. R B. lohani

2012 ◽  
Vol 27 (3) ◽  
pp. 301-304 ◽  
Author(s):  
Zhi-Yuan ZHENG ◽  
Tie-Xin CHEN ◽  
Liang CAO ◽  
Yu-Yan HAN ◽  
Fa-Qiang XU

Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  

2021 ◽  
Vol 1837 (1) ◽  
pp. 012005
Author(s):  
Pai Lu ◽  
Xuyuan Chen ◽  
Per Ohlckers ◽  
Einar Halvorsen ◽  
Martin Hoffmann ◽  
...  

2012 ◽  
Vol 476-478 ◽  
pp. 1519-1522 ◽  
Author(s):  
You Dao Lin ◽  
Xin Wen ◽  
Lai Sen Wang ◽  
Guang Hui Yue ◽  
Dong Liang Peng

Abstract. Single crystalline SnS nanowire arrays have been synthesized by sulfurating the Sn nanowire arrays which were prepared with the electrochemical deposition. The obtained SnS nanowire arrays are charactered with the XRD, SEM, TEM and the UV/Visible/NIR spectrophotometer. And the results indicate that the nanowires with an average diameter of 50 nm and a length of several tens micrometers, which same with the as prepared Sn nanowires. There are two absorption peaks indicate with the direct and indirect bandgaps about the orthorhombic SnS nanowire arrays.


2010 ◽  
Vol 160-162 ◽  
pp. 1331-1335 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
S.N. Syed Jalal ◽  
Wei A. Ng ◽  
Zahid A.K. Durrani

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.


2015 ◽  
Vol 457 ◽  
pp. 96-102 ◽  
Author(s):  
Arokiyadoss Rayerfrancis ◽  
P. Balaji Bhargav ◽  
Nafis Ahmed ◽  
Balaji Chandra ◽  
Sandip Dhara

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