Facile 3D integration of Si nanowires on Bosch-etched sidewalls for stacked channel transistors
Keyword(s):
3D integration of stacked Si nanowire arrays via a self assembly growth on Bosch-etched sidewalls and a successful demonstration of high performance staked channel transistors with an impressive on/off current >107.
2018 ◽
Vol 256
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pp. 465-471
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2008 ◽
Vol 23
(12)
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pp. 3403-3408
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Keyword(s):
2011 ◽
Vol 110-116
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pp. 3284-3288
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Keyword(s):
2016 ◽
Vol 18
(11)
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pp. 7715-7727
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