Facile 3D integration of Si nanowires on Bosch-etched sidewalls for stacked channel transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (4) ◽  
pp. 2787-2792 ◽  
Author(s):  
Ruijin Hu ◽  
Haiguang Ma ◽  
Han Yin ◽  
Jun Xu ◽  
Kunji Chen ◽  
...  

3D integration of stacked Si nanowire arrays via a self assembly growth on Bosch-etched sidewalls and a successful demonstration of high performance staked channel transistors with an impressive on/off current >107.

2018 ◽  
Vol 256 ◽  
pp. 465-471 ◽  
Author(s):  
Jisun Baek ◽  
Byungjin Jang ◽  
Min Hyung Kim ◽  
Wonkung Kim ◽  
Jeongmin Kim ◽  
...  

2014 ◽  
Vol 1666 ◽  
Author(s):  
Juan A. Badán ◽  
Ricardo E. Marotti ◽  
Enrique A. Dalchiele ◽  
Daniel Ariosa ◽  
Francisco Martín ◽  
...  

ABSTRACTOptical properties of Si nanowire arrays (SiNWs) prepared on p-doped Si(111) and Si(100) substrates are studied. The SiNWs were synthesized by self-assembly electroless metal deposition nanoelectrochemistry in an ionic silver HF solution through selective etching. Total reflectance (Rt) and total diffuse reflectance (Rdt) of SiNWs change drastically in comparison to polished Si. To understand these changes diffuse reflectance (Rd) with polarized incident light was studied. For samples prepared on Si(111), the wavelength integrated Rd (wIRd) shows maxima at certain angle of incidence θ and it does not depend on light polarization. Moreover, Rdt of SiNWs prepared on Si(111) can be modeled as an ensemble of diffuse reflectors. For samples prepared on Si(100) wIRd increases with θ, being greater when the light electric field is parallel to the plane of incidence. Also, Rd spectra show structures due to interference effects. For these reasons SiNWs prepared on Si(100) can be considered as a thin film whose refractive index depends on light polarization.


2008 ◽  
Vol 23 (12) ◽  
pp. 3403-3408 ◽  
Author(s):  
Kwang-Soo Son ◽  
Dong Hyun Lee ◽  
Jae-Woong Choung ◽  
Yong Bum Pyun ◽  
Won Il Park ◽  
...  

We report the catalyst-free synthesis of ZnO nanobranches on Si nanowires using metalorganic chemical vapor deposition. The formation of single-crystalline ZnO nanobranches on Si nanowire backbones has been confirmed by lattice resolved transmission electron microscopy. Depending on the growth parameters, especially the growth temperature, the morphology and size of the ZnO nanobranches evolved from nanothorn-shaped (at 350 °C) to nanoneedle-shaped structures (at 500 °C). When the growth temperature was further increased to 800 °C, thin ZnO nanowire branches grew out of the Si nanowire backbones coated with thin ZnO shells, whereas no ZnO branch was formed on bare Si nanowires due to limited nucleation. The growth behavior was further exploited to fabricate ZnO/Si nanowire networks by growing the ZnO nanowires selectively on laterally aligned Si–ZnO core-shell nanowire arrays. In addition, cathodoluminescent properties of ZnO nanobranches on Si nanowire backbones are discussed with respect to position and size.


2011 ◽  
Vol 110-116 ◽  
pp. 3284-3288 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
Zahid A.K. Durrani

The influence of the nucleation process of Ag particles on the formation of Si nanowire arrays is investigated by two-stage electroless chemical etching. The dimensions of the Ag particles formed in the first stage of the process play an important role in the formation of the Si nanowires. The nucleation and etch result are analysed using SEM. The electrical properties of the resulting Si NW arrays are also studied.


2016 ◽  
Vol 18 (11) ◽  
pp. 7715-7727 ◽  
Author(s):  
Ramesh Ghosh ◽  
Kenji Imakita ◽  
Minoru Fujii ◽  
P. K. Giri

Array of Si nanowires fabricated by Au/Ag bilayer metal assisted etching exhibit strongly enhanced photoluminescence and efficient visible light photocatalysis and are primarily attributed to plasmon enhancement and Schottky barrier effect, respectively.


2020 ◽  
Vol 49 (12) ◽  
pp. 3766-3774 ◽  
Author(s):  
Jianping Li ◽  
Dai Wu ◽  
Chunlei Wang ◽  
Ding Liu ◽  
Weilin Chen ◽  
...  

The strategy of constructing a 2D flexible superlattice polyoxometalate/rGO heterojunction is proposed to improve the photoelectric conversion efficiency of photovoltaic devices.


Small Methods ◽  
2021 ◽  
pp. 2100202
Author(s):  
Tiantian Dai ◽  
Zanhong Deng ◽  
Xiaodong Fang ◽  
Huadong Lu ◽  
Yong He ◽  
...  

2021 ◽  
pp. 119464
Author(s):  
Qingwu Long ◽  
Shuaifei Zhao ◽  
Jiexin Chen ◽  
Zhe Zhang ◽  
Guangxian Qi ◽  
...  

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