Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

CrystEngComm ◽  
2015 ◽  
Vol 17 (24) ◽  
pp. 4469-4474 ◽  
Author(s):  
J. Z. Li ◽  
Z. Z. Chen ◽  
Q. Q. Jiao ◽  
Y. L. Feng ◽  
S. Jiang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Crystalline Quality ◽  
High Crystalline Quality ◽  
Patterned Sapphire Substrate ◽  
Specular Surface

The silane-controlled 3D growth led to a high crystalline quality, much strain relaxation and a specular surface for the GaN epilayers on NPSS.

scholarly journals Strain relaxation in GaN layers grown on porous GaN sublayers

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
M. Mynbaeva ◽  
A. Titkov ◽  
A. Kryzhanovski ◽  
I. Kotousova ◽  
A.S. Zubrilov ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Strain Relaxation ◽  
Vapour Phase ◽  
Crystalline Quality ◽  
Epitaxial Layers ◽  
High Quality ◽  
High Crystalline Quality ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Good Surface

We have studied epitaxial GaN layers grown by hydride vapour phase epitaxy (HVPE) on porous GaN sublayers formed on SiC substrates. It was shown that these layers can be grown with good surface morphology and high crystalline quality. X-ray, Raman and photoluminescent (PL) measurements showed that the stress in the layers grown on porous GaN was reduced to 0.1-0.2 GPa, while the stress in the layers grown directly on 6H-SiC substrates remains at its usual level of about 1 GPa. Thus, we have shown that growth on porous GaN sublayer is a promising method for fabrication of high quality epitaxial layers of GaN with low strain values.

scholarly journals Spatial distribution of crystalline quality in N-type GaN grown on patterned sapphire substrate

2016 ◽  
Vol 6 (6) ◽  
pp. 1817 ◽  
Author(s):  
Teng Jiang ◽  
Shengrui Xu ◽  
Jincheng Zhang ◽  
Peixian Li ◽  
Jun Huang ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Sapphire Substrate ◽  
Crystalline Quality ◽  
Patterned Sapphire Substrate

Period size effect induced crystalline quality improvement of AlN on a nano-patterned sapphire substrate

2019 ◽  
Vol 58 (10) ◽  
pp. 100912
Author(s):  
Nan Xie ◽  
Fujun Xu ◽  
Na Zhang ◽  
Jing Lang ◽  
Jiaming Wang ◽  
...  
Keyword(s):  
Quality Improvement ◽  
Size Effect ◽  
Sapphire Substrate ◽  
Crystalline Quality ◽  
Patterned Sapphire Substrate

Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (\bf 11{\overline 2}2) GaN layers grown from the sidewall of anr-patterned sapphire substrate

2013 ◽  
Vol 46 (5) ◽  
pp. 1425-1433 ◽  
Author(s):  
Sergey Lazarev ◽  
Sondes Bauer ◽  
Tobias Meisch ◽  
Martin Bauer ◽  
Ingo Tischer ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Basal Plane ◽  
Diffuse Scattering ◽  
Three Dimensional ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Patterned Sapphire Substrate ◽  
Fault Density

Three-dimensional reciprocal space mapping of semipolar (11{\overline 2}2) GaN grown on stripe-patternedr-plane (1{\overline 1}02) sapphire substrates is found to be a powerful and crucial method for the analysis of diffuse scattering originating from stacking faults that are diffracting in a noncoplanar geometry. Additionally, by measuring three-dimensional reciprocal space maps (3D-RSMs) of several reflections, the transmission electron microscopy visibility criteria could be confirmed. Furthermore, similar to cathodoluminescence, the 3D-RSM method could be used in future as a reliable tool to distinguish clearly between the diffuse scattering signals coming from prismatic and from basal plane stacking faults and from partial dislocations in semipolar (11{\overline 2}2) GaN. The fitting of the diffuse scattering intensity profile along the stacking fault streaks with a simulation based on the Monte Carlo approach has delivered an accurate determination of the basal plane stacking fault density. A reduction of the stacking fault density due to the intercalation of an SiN interlayer in the GaN layer deposited on the sidewall of the pre-patterned sapphire substrate has led to an improvement of the optoelectronic properties, influenced by the crystal quality, as has been demonstrated by a locally resolved cathodoluminescence investigation.

High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate

2007 ◽  
Vol 204 (6) ◽  
pp. 2000-2004 ◽  
Author(s):  
K. Iida ◽  
H. Watanabe ◽  
K. Takeda ◽  
T. Nagai ◽  
T. Sumii ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Efficiency ◽  
Crystalline Quality ◽  
High Crystalline Quality ◽  
Uv Emitters
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