scholarly journals Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Heng Li ◽  
Hui-Yu Cheng ◽  
Wei-Liang Chen ◽  
Yi-Hsin Huang ◽  
Chi-Kang Li ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diode ◽  
Three Dimensional ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Confocal Raman

Growth of GaN Layer and Characterization of Light-Emitting Diode Using Random-Cone Patterned Sapphire Substrate

2009 ◽  
Vol 48 (12) ◽  
pp. 122103 ◽  
Author(s):  
Narihito Okada ◽  
Tohru Murata ◽  
Kazuyuki Tadatomo ◽  
Huang C. Chang ◽  
Kazuhiro Watanabe
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diode ◽  
Patterned Sapphire Substrate ◽  
Light Emitting

Improved Light Extraction Efficiency of Light-Emitting Diode Grown on Nanoscale-Silicon-Dioxide-Patterned Sapphire Substrate

2020 ◽  
Vol 12 (5) ◽  
pp. 647-651 ◽  
Author(s):  
Young Hoon Sung ◽  
Jaemin Park ◽  
Eun-Seo Choi ◽  
Hee Chul Lee ◽  
Heon Lee
Keyword(s):  
Silicon Dioxide ◽  
Sapphire Substrate ◽  
Extraction Efficiency ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Wafer ◽  
Luminescence Efficiency

A conical-shaped Si dioxide nano-pattern was employed to sapphire substrate in order to improve the light extraction efficiency of light-emitting diodes. The conical-shaped Si dioxide nano-patterns were fabricated on a 2-inch sapphire wafer using direct imprinting of hydrogen silsesquioxane material. A blue-LED structure was grown on conical-shaped silicon-dioxide nano-patterned sapphire substrates. Photoluminescence and electroluminescence measurements were used to confirm the effectiveness of the nanoscale Si oxide patterned sapphire. An improvement in the luminescence efficiency was observed when nanoscale Si oxide patterned sapphire substrate was used. 1.5 times higher PL intensity and 1.6 times higher EL intensity were observed for GaN LED structure grown on nanoscale Si oxide patterned sapphire, compared to LED structure grown on conventional flat sapphire wafer.

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