Improved crystalline quality of nonpolar a-plane GaN grown on r-plane patterned sapphire substrate (Conference Presentation)

Author(s):  
Shunya Otsuki ◽  
Daiki Jinno ◽  
Hisayoshi Daicho ◽  
Satoshi Kamiyama ◽  
Tetsuya Takeuchi ◽  
...  
CrystEngComm ◽  
2015 ◽  
Vol 17 (24) ◽  
pp. 4469-4474 ◽  
Author(s):  
J. Z. Li ◽  
Z. Z. Chen ◽  
Q. Q. Jiao ◽  
Y. L. Feng ◽  
S. Jiang ◽  
...  

The silane-controlled 3D growth led to a high crystalline quality, much strain relaxation and a specular surface for the GaN epilayers on NPSS.


2013 ◽  
Vol 25 (1) ◽  
pp. 267-272 ◽  
Author(s):  
Dechao Yang ◽  
Hongwei Liang ◽  
Yu Qiu ◽  
Rensheng Shen ◽  
Yang Liu ◽  
...  

CrystEngComm ◽  
2019 ◽  
Vol 21 (34) ◽  
pp. 5124-5128 ◽  
Author(s):  
Shen Yan ◽  
Junhui Die ◽  
Caiwei Wang ◽  
Xiaotao Hu ◽  
Ziguang Ma ◽  
...  

In this work, high-quality a-plane GaN was obtained by direct growth on a stripe-patterned sapphire substrate.


2016 ◽  
Vol 6 (6) ◽  
pp. 1817 ◽  
Author(s):  
Teng Jiang ◽  
Shengrui Xu ◽  
Jincheng Zhang ◽  
Peixian Li ◽  
Jun Huang ◽  
...  

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4919-4921
Author(s):  
Anatolij Govorkov ◽  
Alexsandr Donskov ◽  
Lev Diakonov ◽  
Yulia Kozlova ◽  
Sergej Malahov ◽  
...  

CrystEngComm ◽  
2019 ◽  
Vol 21 (31) ◽  
pp. 4632-4636 ◽  
Author(s):  
M. X. Wang ◽  
F. J. Xu ◽  
J. M. Wang ◽  
N. Xie ◽  
Y. H. Sun ◽  
...  

Evolution of crystalline quality of AlN via high-temperature (HT) annealing induced by different sapphire pretreatments is investigated.


2019 ◽  
Vol 58 (10) ◽  
pp. 100912
Author(s):  
Nan Xie ◽  
Fujun Xu ◽  
Na Zhang ◽  
Jing Lang ◽  
Jiaming Wang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document