scholarly journals Spatial distribution of crystalline quality in N-type GaN grown on patterned sapphire substrate

2016 ◽  
Vol 6 (6) ◽  
pp. 1817 ◽  
Author(s):  
Teng Jiang ◽  
Shengrui Xu ◽  
Jincheng Zhang ◽  
Peixian Li ◽  
Jun Huang ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Sapphire Substrate ◽  
Crystalline Quality ◽  
Patterned Sapphire Substrate

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

CrystEngComm ◽  
2015 ◽  
Vol 17 (24) ◽  
pp. 4469-4474 ◽  
Author(s):  
J. Z. Li ◽  
Z. Z. Chen ◽  
Q. Q. Jiao ◽  
Y. L. Feng ◽  
S. Jiang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Crystalline Quality ◽  
High Crystalline Quality ◽  
Patterned Sapphire Substrate ◽  
Specular Surface

The silane-controlled 3D growth led to a high crystalline quality, much strain relaxation and a specular surface for the GaN epilayers on NPSS.

Period size effect induced crystalline quality improvement of AlN on a nano-patterned sapphire substrate

2019 ◽  
Vol 58 (10) ◽  
pp. 100912
Author(s):  
Nan Xie ◽  
Fujun Xu ◽  
Na Zhang ◽  
Jing Lang ◽  
Jiaming Wang ◽  
...  
Keyword(s):  
Quality Improvement ◽  
Size Effect ◽  
Sapphire Substrate ◽  
Crystalline Quality ◽  
Patterned Sapphire Substrate

Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate

2018 ◽  
Vol 12 (1) ◽  
pp. 015503 ◽  
Author(s):  
Junhui Die ◽  
Caiwei Wang ◽  
Shen Yan ◽  
Xiaotao Hu ◽  
Wei Hu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Crystalline Quality ◽  
Patterned Sapphire Substrate

scholarly journals Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 698
Author(s):  
Wenwang Wei ◽  
Yi Peng ◽  
Jiabin Wang ◽  
Muhammad Farooq Saleem ◽  
Wen Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Compressive Stress ◽  
Sapphire Substrate ◽  
Light Transmission ◽  
Chemical Vapor ◽  
Biaxial Stress ◽  
X Ray Diffraction ◽  
Patterned Sapphire Substrate ◽  
Transmission Electron ◽  
Nano Patterning

AlN epilayers were grown on a 2-inch [0001] conventional flat sapphire substrate (CSS) and a nano-patterned sapphire substrate (NPSS) by metalorganic chemical vapor deposition. In this work, the effect of the substrate template and temperature on stress and optical properties of AlN films has been studied by using Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible spectrophotometer and spectroscopic ellipsometry (SE). The AlN on NPSS exhibits lower compressive stress and strain values. The biaxial stress decreases from 1.59 to 0.60 GPa for AlN on CSS and from 0.90 to 0.38 GPa for AlN on NPSS sample in the temperature range 80–300 K, which shows compressive stress. According to the TEM data, the stress varies from tensile on the interface to compressive on the surface. It can be deduced that the nano-holes provide more channels for stress relaxation. Nano-patterning leads to a lower degree of disorder and stress/strain relaxes by the formation of the nano-hole structure between the interface of AlN epilayers and the substrate. The low crystal disorder and defects in the AlN on NPSS is confirmed by the small Urbach energy values. The variation in bandgap (Eg) and optical constants (n, k) with temperature are discussed in detail. Nano-patterning leads to poor light transmission due to light scattering, coupling, and trapping in nano-holes.

Demonstration of GaN-based white LED grown on 4-inch patterned sapphire substrate by MOCVD

2021 ◽  
Vol 112 ◽  
pp. 110811
Author(s):  
Youhua Zhu ◽  
Xuan Liu ◽  
Mei Ge ◽  
Yi Li ◽  
Meiyu Wang
Keyword(s):  
Sapphire Substrate ◽  
White Led ◽  
Patterned Sapphire Substrate
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