Hydrogenated CeO2−xSx mesoporous hollow spheres for enhanced solar driven water oxidation

2016 ◽  
Vol 52 (12) ◽  
pp. 2521-2524 ◽  
Author(s):  
Yuting Xiao ◽  
Yajie Chen ◽  
Ying Xie ◽  
Guohui Tian ◽  
Shien Guo ◽  
...  
Keyword(s):  
Synergistic Effect ◽  
Band Gap ◽  
Carrier Concentration ◽  
Water Oxidation ◽  
Doping Level ◽  
Oxygen Vacancies ◽  
Narrow Band ◽  
Hollow Spheres ◽  
Sulfur Doping

Hydrogenated CeO2−xSx mesoporous hollow spheres were prepared and exhibited much higher rates of O2 evolution than CeO2 and CeO2−xSx due to the synergistic effect of high sulfur doping level, narrow band gap, moderate oxygen vacancies and higher carrier concentration.

Nanoporous Ta3N5via electrochemical anodization followed by nitridation for solar water oxidation

2020 ◽  
Vol 49 (42) ◽  
pp. 15023-15033
Author(s):  
Pran Krisna Das ◽  
Maheswari Arunachalam ◽  
Kanase Rohini Subhash ◽  
Young Jun Seo ◽  
Kwang-Soon Ahn ◽  
...  
Keyword(s):  
Visible Light ◽  
Band Gap ◽  
Water Splitting ◽  
Water Oxidation ◽  
Narrow Band ◽  
Tantalum Nitride ◽  
Electrochemical Anodization ◽  
Visible Light Driven ◽  
Solar Water Oxidation ◽  
Pec Water Splitting

Nanoporous tantalum nitride (Ta3N5) is a promising visible-light-driven photoanode for photoelectrochemical (PEC) water splitting with a narrow band gap of approximately 2.0 eV.

Multicomponent equiatomic rare earth oxides with a narrow band gap and associated praseodymium multivalency

2017 ◽  
Vol 46 (36) ◽  
pp. 12167-12176 ◽  
Author(s):  
Abhishek Sarkar ◽  
Christoph Loho ◽  
Leonardo Velasco ◽  
Tiju Thomas ◽  
Subramshu S. Bhattacharya ◽  
...  
Keyword(s):  
Rare Earth ◽  
Band Gap ◽  
Oxygen Vacancies ◽  
Narrow Band ◽  
Rare Earth Oxides ◽  
Phase Pure ◽  
High Level

Phase pure multinary rare earth oxides, containing multivalent praseodymium, have a narrow band gap and a high level of oxygen vacancies.

Monte Carlo Modelisation of Photoexcited Carriers Relaxation Including Auger Effect in Narrow Band Gap InGaAs

2009 ◽  
Vol 1230 ◽  
Author(s):  
Eric Tea ◽  
Frederic Aniel
Keyword(s):  
Monte Carlo ◽  
Band Gap ◽  
Carrier Concentration ◽  
High Efficiency ◽  
Carrier Lifetime ◽  
Narrow Band ◽  
Monte Carlo Model ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Auger Effect

AbstractThe Auger effect is one of the fastest recombination mechanisms in narrow band gap semiconductors at high carrier concentration. This regime is of great interest for high efficiency hot carrier solar cells application and is also involed in many optical devices. Therefore, the knowledge of this limitting process is required for the determination of carrier lifetime useful to accurate solar cell efficiency calculations. For the first time, we present a carrier lifetime study versus carrier concentration in InGaAs based on a Monte Carlo model where the Auger effect is included as a relaxation mecanism.

Stable yellow ZnO mesocrystals with efficient visible-light photocatalytic activity

CrystEngComm ◽  
2014 ◽  
Vol 16 (34) ◽  
pp. 7906-7913 ◽  
Author(s):  
Yin Peng ◽  
Yu Wang ◽  
Qing-Guo Chen ◽  
Qing Zhu ◽  
An Wu Xu
Keyword(s):  
Photocatalytic Activity ◽  
Visible Light ◽  
Band Gap ◽  
Oxygen Vacancies ◽  
Narrow Band ◽  
Visible Light Photocatalytic Activity ◽  
Visible Light Photocatalytic

In this work, we present a novel and facile approach to prepare yellow ZnO mesocrystals from Zn(OH)F precursor. The as-prepared yellow ZnO shows a narrow band-gap (Eg = 3.09 eV) and visible-light photocatalytic activity, which is due to the existence of abundant oxygen vacancies and vectorially aligned nanoparticles.

Thermoelectric Properties of the cubic AgPb10SbTe12

2003 ◽  
Vol 793 ◽  
Author(s):  
Kuei-Fang Hsu ◽  
Sim Loo ◽  
Wei Chen ◽  
Ctirad Uher ◽  
Tim Hogan ◽  
...  
Keyword(s):  
Solid State ◽  
Band Gap ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Solid State Reaction ◽  
Narrow Band ◽  
Thermoelectric Measurements

ABSTRACTAgPb10SbTe12 is one member of the cubic family of materials AgPbmSbTem+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb10SbTe12 is a narrow band gap semiconductor with Eg∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.

scholarly journals Improving the ZT of SnTe using electronic structure engineering: unusual behavior of Bi dopant in the presence of Pb as a co-dopant

2021 ◽  
Vol 2 (19) ◽  
pp. 6267-6271 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
Resonance Level ◽  
Unusual Behavior ◽  
Level Increase ◽  
Structure Engineering

Extraordinary tuning of electronic structure of SnTe by Bi in the presence of Pb as a co-adjuvant dopant. Synergistic effect of resonance level, increase in the band gap, valence and conduction sub-bands convergence leads to enhanced TE performance.

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