scholarly journals Improving the ZT of SnTe using electronic structure engineering: unusual behavior of Bi dopant in the presence of Pb as a co-dopant

2021 ◽  
Vol 2 (19) ◽  
pp. 6267-6271 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
Resonance Level ◽  
Unusual Behavior ◽  
Level Increase ◽  
Structure Engineering

Extraordinary tuning of electronic structure of SnTe by Bi in the presence of Pb as a co-adjuvant dopant. Synergistic effect of resonance level, increase in the band gap, valence and conduction sub-bands convergence leads to enhanced TE performance.

Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride

2019 ◽  
Vol 7 (16) ◽  
pp. 4817-4821 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
High Performance ◽  
Room Temperature ◽  
Band Offset ◽  
Valence Band Offset ◽  
Co Doping ◽  
Tin Telluride ◽  
Structure Engineering

Resonance states due to Bi and In co-doping, band gap enlargement, and a reduced valence-band offset in SnTe lead to a record high room-temperature ZT.

Resonance levels in GeTe thermoelectrics: zinc as a new multifaceted dopant

2020 ◽  
Vol 44 (41) ◽  
pp. 17664-17670
Author(s):  
D. Krishna Bhat ◽  
U. Sandhya Shenoy
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Resonance States ◽  
Structure Engineering

Electronic-structure engineering of GeTe:Zn doping enhances thermoelectric properties via synergy of resonance states, increase in band gap and hyper-convergence.

ELECTRONIC-STRUCTURE ENGINEERING OF CARBON NANOTUBES

NANO ◽  
2006 ◽  
Vol 01 (02) ◽  
pp. 115-138 ◽  
Author(s):  
KAY HYEOK AN ◽  
YOUNG HEE LEE
Keyword(s):  
Carbon Nanotubes ◽  
Electronic Structure ◽  
Band Gap ◽  
Electronic Structures ◽  
Analytical Techniques ◽  
Band Gap Engineering ◽  
Transparent Conducting Films ◽  
The Subject ◽  
Chirality Separation ◽  
Structure Engineering

A review for controlling electronic structures and chirality separation of carbon nanotubes (CNTs) is presented with the subject divided into three topics. The first topic introduces the electronic structures of CNTs and the analytical techniques to identify the chirality of CNTs. The second topic discusses band gap engineering techniques using the sidewall functionalization of CNTs. The third topic concerns several approaches in chiral and diameter-dependent separation of CNTs. The electronic-structure engineering is of critical importance for a variety of technological applications of CNTs including, for example, field-effect transistor, chemical/bio-nanosensors, the electrical conductivity and charge dissipation in polymer/CNT composites, and flexible transparent conducting films. This paper is intended to concisely review the recent advances in the experimental and theoretical CNT researches concerned with the band gap engineering and chiral separation techniques of CNTs.

New Insights into the Nature of the Band Gap of CuGeO3 Nanoparticles: Synthesis, Electronic Structure, and Optical and Photocatalytic Properties

2019 ◽  
Author(s):  
Victor Y. Suzuki ◽  
Luís Henrique Cardozo Amorin ◽  
Natália H. de Paula ◽  
Anderson R. Albuquerque ◽  
Julio Ricardo Sambrano ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Material Design ◽  
Photocatalytic Properties ◽  
Critical Parameters ◽  
Synthetic Approach ◽  
Microwave Assisted ◽  
Theoretical Approaches ◽  
Nanoparticles Synthesis ◽  
First Time

<p>We report, for the first time, new insights into the nature of the band gap of <a>CuGeO<sub>3</sub> </a>(CGO) nanocrystals synthesized from a microwave-assisted hydrothermal method in the presence of citrate. To the best of our knowledge, this synthetic approach has the shortest reaction time and it works at the lowest temperatures reported in the literature for the preparation of these materials. The influence of the surfactant on the structural, electronic, optical, and photocatalytic properties of CGO nanocrystals is discussed by a combination of experimental and theoretical approaches, and that results elucidates the nature of the band gap of synthetized CGO nanocrystals. We believe that this particular strategy is one of the most critical parameters for the development of innovative applications and that result could shed some light on the emerging material design with entirely new properties.</p> <p><b> </b></p>

Synergistic effect of phosphomolybdic acid on rhodium-based metal-organic frameworks for the efficient selective photocatalytic reduction of CO2 to CO

2021 ◽  
Author(s):  
Yurong Shan ◽  
Dexiang Liu ◽  
Chunyan Xu ◽  
Peng Zhan ◽  
Hui Wang ◽  
...  
Keyword(s):  
Carbon Dioxide ◽  
Electronic Structure ◽  
Synergistic Effect ◽  
Metal Organic Frameworks ◽  
Phosphomolybdic Acid ◽  
Photocatalytic Reduction ◽  
Structure And Morphology ◽  
Spherical Structure ◽  
Metal Organic ◽  
Reduction Of Co2

In this work, PMA@NH2-MIL-68(Rh) with a mangosteen spherical structure was successfully synthesized by a hydrothermal method for the photocatalytic reduction of carbon dioxide. The electronic structure and morphology of the...

Electronic structure engineering of single atomic Ru by Ru nanoparticles to enable enhanced activity for alkaline water reduction

2019 ◽  
Vol 7 (33) ◽  
pp. 19531-19538 ◽  
Author(s):  
Qi Hu ◽  
Guomin Li ◽  
Xiaowan Huang ◽  
Ziyu Wang ◽  
Hengpan Yang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Electronic Structures ◽  
Alkaline Water ◽  
Water Reduction ◽  
Ru Nanoparticles ◽  
Enhanced Activity ◽  
Structure Engineering

The electronic structures of single atomic Ru (SA-Ru) were suitably optimized by nearby Ru NPs for boosting the hydrogen evolution reaction (HER) over SA-Ru.

scholarly journals Electronic Structure Engineering Achieved via Organic Ligands in Silicon Nanocrystals

2020 ◽  
Vol 32 (15) ◽  
pp. 6326-6337 ◽  
Author(s):  
Kateřina Dohnalová ◽  
Prokop Hapala ◽  
Kateřina Kůsová ◽  
Ivan Infante
Keyword(s):  
Electronic Structure ◽  
Silicon Nanocrystals ◽  
Organic Ligands ◽  
Structure Engineering

scholarly journals DFT Study of the Electronic Structure of Cubic-SiC Nanopores with a C-Terminated Surface

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
M. Calvino ◽  
A. Trejo ◽  
M. I. Iturrios ◽  
M. C. Crisóstomo ◽  
Eliel Carvajal ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Density Functional ◽  
Surface Passivation ◽  
Phase Changes ◽  
Surface Relaxation ◽  
Oh Radicals ◽  
Functional Theory ◽  
Band Gap Engineering ◽  
Chemical Surface

A study of the dependence of the electronic structure and energetic stability on the chemical surface passivation of cubic porous silicon carbide (pSiC) was performed using density functional theory (DFT) and the supercell technique. The pores were modeled by removing atoms in the [001] direction to produce a surface chemistry composed of only carbon atoms (C-phase). Changes in the electronic states of the porous structures were studied by using different passivation schemes: one with hydrogen (H) atoms and the others gradually replacing pairs of H atoms with oxygen (O) atoms, fluorine (F) atoms, and hydroxide (OH) radicals. The results indicate that the band gap behavior of the C-phase pSiC depends on the number of passivation agents (other than H) per supercell. The band gap decreased with an increasing number of F, O, or OH radical groups. Furthermore, the influence of the passivation of the pSiC on its surface relaxation and the differences in such parameters as bond lengths, bond angles, and cell volume are compared between all surfaces. The results indicate the possibility of nanostructure band gap engineering based on SiC via surface passivation agents.

scholarly journals Field Effect on Crystal Phase of Silicon in Si/CeO2/SiO2Structure

2008 ◽  
Vol 2008 ◽  
pp. 1-4
Author(s):  
Dmitry E. Milovzorov
Keyword(s):  
Electronic Structure ◽  
Spatial Distribution ◽  
Band Gap ◽  
Buffer Layer ◽  
Field Effect ◽  
Cerium Dioxide ◽  
Silicon Film ◽  
Crystal Phase ◽  
Great Role ◽  
Defect Levels

The structural, optical, and conductivity properties of silicon film deposited on cerium dioxide buffer layer were studied. The electronic structure of system consists of various defect levels inside band gap. The temperature spatial distribution plays a great role in silicon crystallization. The field destruction of crystal phase and its restoration, after annealing, were investigated.

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