Multicomponent equiatomic rare earth oxides with a narrow band gap and associated praseodymium multivalency

2017 ◽  
Vol 46 (36) ◽  
pp. 12167-12176 ◽  
Author(s):  
Abhishek Sarkar ◽  
Christoph Loho ◽  
Leonardo Velasco ◽  
Tiju Thomas ◽  
Subramshu S. Bhattacharya ◽  
...  

Phase pure multinary rare earth oxides, containing multivalent praseodymium, have a narrow band gap and a high level of oxygen vacancies.

2007 ◽  
Vol 62 (6) ◽  
pp. 219-270 ◽  
Author(s):  
M. Verónica Ganduglia-Pirovano ◽  
Alexander Hofmann ◽  
Joachim Sauer

2016 ◽  
Vol 52 (12) ◽  
pp. 2521-2524 ◽  
Author(s):  
Yuting Xiao ◽  
Yajie Chen ◽  
Ying Xie ◽  
Guohui Tian ◽  
Shien Guo ◽  
...  

Hydrogenated CeO2−xSx mesoporous hollow spheres were prepared and exhibited much higher rates of O2 evolution than CeO2 and CeO2−xSx due to the synergistic effect of high sulfur doping level, narrow band gap, moderate oxygen vacancies and higher carrier concentration.


2017 ◽  
Vol 46 (13) ◽  
pp. 4170-4173 ◽  
Author(s):  
Ruofei Wu ◽  
Xingxing Jiang ◽  
Mingjun Xia ◽  
Lijuan Liu ◽  
Xiaoyang Wang ◽  
...  

K8Ce2I18O53 shows the highest visible light driven photocatalytic activity among rare earth iodates due to asynergistic effect between the narrow band gap and polar zero-dimensional [Ce(IO3)8]4− units.


2012 ◽  
Vol 19 (02) ◽  
pp. 1250013 ◽  
Author(s):  
WEI-TAO SU ◽  
DE-XUAN HUO ◽  
BIN LI

Ternary rare earth oxides are expected to be more promising high-k dielectric materials than conventional binary rare earth oxides due to higher band gap, higher permittivity and good interfacial stability. In the present study, the band alignment and atom thermal diffusion of LaYbO3 , a new ternary rare earth oxide, are studied by X-ray photoelectron spectrum (XPS) and angle-resolved XPS, respectively. The band gap value for LaYbO3 crystalline film rises to 6.7 eV compared with 6.2 eV for amorphous film. Valence (ΔEv) and conduction band (ΔEc) offset are ΔEv = 3.5 eV, ΔEc = 1.6 eV for the amorphous film and ΔEv = 3.3 eV, ΔEc = 2.3 eV for the crystalline film. From elemental depth profile through high-k layer and silicon substrate, it is shown that La atom tends to diffuse into silicon substrate and piles up at oxide/silicon interface at high annealing temperature ~1000°C.


2017 ◽  
Vol 26 (2) ◽  
pp. 270-276 ◽  
Author(s):  
Chiara Gionco ◽  
Maria C. Paganini ◽  
Elio Giamello ◽  
Olga Sacco ◽  
Vincenzo Vaiano ◽  
...  

2000 ◽  
Vol 155 (1) ◽  
pp. 55-61 ◽  
Author(s):  
Sung-Jin Kim ◽  
John R. Ireland ◽  
Carl R. Kannewurf ◽  
Mercouri G. Kanatzidis
Keyword(s):  
Band Gap ◽  

CrystEngComm ◽  
2014 ◽  
Vol 16 (34) ◽  
pp. 7906-7913 ◽  
Author(s):  
Yin Peng ◽  
Yu Wang ◽  
Qing-Guo Chen ◽  
Qing Zhu ◽  
An Wu Xu

In this work, we present a novel and facile approach to prepare yellow ZnO mesocrystals from Zn(OH)F precursor. The as-prepared yellow ZnO shows a narrow band-gap (Eg = 3.09 eV) and visible-light photocatalytic activity, which is due to the existence of abundant oxygen vacancies and vectorially aligned nanoparticles.


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