A new polymer with low dielectric constant based on trifluoromethyl-substituted arene: preparation and properties

RSC Advances ◽  
2014 ◽  
Vol 4 (77) ◽  
pp. 40782-40787 ◽  
Author(s):  
Jiajia Wang ◽  
Kaikai Jin ◽  
Fengkai He ◽  
Jing Sun ◽  
Qiang Fang
Keyword(s):  
Mechanical Properties ◽  
Molecular Weight ◽  
Dielectric Constant ◽  
Polymer Film ◽  
High Molecular Weight ◽  
Electronics Industry ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Potential Applications

A polymer based on trifluoromethyl-substituted arene was synthesized with high molecular weight (Mn) of 62 000 by the Scholl reaction. The polymer film showed low dielectric constants of about 2.56 in a range of frequencies from 1 to 25 MHz. Moreover, the polymer revealed high thermostability and good mechanical properties, suggesting that the polymer had potential applications in the electronics industry.

Low Dielectric, Hydrophobic Polyimide Homopolymers and Poly(Siloxane Imide) Segmented Copolymers for Electronic Applications

1989 ◽  
Vol 154 ◽  
Author(s):  
C. A. Arnold ◽  
Y. P. Chen ◽  
D. H. Chen ◽  
M. E. Rogers ◽  
J. E. McGrath
Keyword(s):  
Mechanical Properties ◽  
Molecular Weight ◽  
Dielectric Constant ◽  
Maleic Anhydride ◽  
High Molecular Weight ◽  
Water Sorption ◽  
Dielectric Constants ◽  
Thermal And Mechanical Properties ◽  
Low Dielectric ◽  
Enhanced Solubility

AbstractPolyimides generally possess excellent thermal and mechanical properties, making them attractive candidates for high performance applications. To be useful for microelectronic applications, however, these materials must also be good insulators, as well as be readily processable.The incorporation of flexible polysiloxane segments into the polyimide backbone structure has been shown to yield soluble, processable copolyimides with good thermal and mechanical properties. In addition, the siloxane component imparts a number of other significant benefits for electronic applications. These include reduced water sorption, surface modification, good thermal and ultraviolet stability, and resistance to degradation in oxygen plasma environments. For polar polyimide systems, siloxane incorporation will also reduce the dielectric constant. The use of other less polar, more hydrophobic monomers will consistently yield soluble systems with lower dielectric constants as well.In this work, a series of high molecular weight, soluble polyimide homopolymers and segmented polysiloxane-polyimide copolymers were synthesized by a solution technique. The solution procedure, conducted at lower temperatures (˜170°C) than the classical bulk thermal imidization (300°C), has been shown to yield polyimides of enhanced solubility. In order to further enhance processability, molecular weight was controlled through the incorporation of monofunctional reagents such as phthalic anhydride and maleic anhydride, yielding nonreactive or potentially reactive endgroups, respectively. A series of maleic anhydride terminated imide oligomers with varying molecular weights were synthesized based upon the hexafluoropropane linked dianhydride and bisaniline diamine. In their oligomeric state, they exhibited enhanced solubility compared with their linear high molecular weight analogue. As these monomers were relatively nonpolar and hydrophobic, they afforded polyimides of low dielectric constant and a low level of water sorption. After thermally crosslinking the endgroups, the advantages of insoluble network systems could be realized. Particular advantages for electronic applications include thermal and dimensional stability over a wide temperature range, good mechanical properties, and chemical resistance. Structure-property characterization, including water sorption, dielectric constants, solubility behavior and thermal/mechanical properties will be reported.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Fabrication of low dielectric constant polyimide/TiO2 nanofibers with enhanced UV-light shielding properties

2018 ◽  
Vol 31 (8) ◽  
pp. 986-995
Author(s):  
Lei Wang ◽  
Guifen Gong ◽  
Junyao Shen ◽  
Jinsong Leng
Keyword(s):  
Dielectric Constant ◽  
Light Absorption ◽  
Composite Nanofibers ◽  
Uv Light ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Number Density ◽  
Tio2 Nanofibers ◽  
Low Dielectric ◽  
Mechanical Tensile

Polyimide (PI)/titanium dioxide (TiO2) composite nanofibers (NFs) with average diameters of 200–250 nm were synthesized via electrospinning. The total number density of dipoles decreased significantly, owing to the porous structures and compact interface between TiO2 NPs and PI matrix. All PI/TiO2 NFs maintain low dielectric constants and losses. For example, the dielectric constants of PI/TiO2-6% NFs are all lower than 2.6, being exposed to temperatures from 25°C to 200°C. Meantime, the dielectric losses of PI/TiO2-6% NFs are below 0.005. For ultraviolet (UV)-light shielding performance, the PI/TiO2 NFs exhibited good UV-light shielding and corresponding anti-photoaging properties. The reason can be ascribed from high UV-light absorption and scattering ability in the TiO2 NPs. The best UV-light absorption (average: 3.71) and corresponding absorption decay (15.13%) were achieved for optimized PI/TiO2-6% NFs. Other fundamental characteristics, such as the thermal stability, mechanical tensile property, and hydrophobicity, were also investigated. Such low dielectric constant PI/TiO2 composite NFs can be alternatively chosen under a longtime UV-light exposing condition.

Dielectric Properties of Sol - Gel Silica Glasses

1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Elemental Carbon ◽  
Sol Gel ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silica Glasses ◽  
Low Dielectric ◽  
Gel Technique

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.

Porous Silicon Oxynitride Films Derived from Polysilazane as a Novel Low-Dielectric Constant Material

1999 ◽  
Vol 565 ◽  
Author(s):  
T. Aoki ◽  
Y Shimizu ◽  
T. Kikkawa
Keyword(s):  
Dielectric Constant ◽  
Dielectric Constants ◽  
Silicon Oxynitride ◽  
Low Dielectric Constant ◽  
Oxidation Reactions ◽  
Sem Images ◽  
Cross Sectional ◽  
Low Dielectric ◽  
Inorganic Films ◽  
Hydrophobic Treatment

AbstractA novel spin on material derived from perhydropolysilazane that converts into ultra-low k inorganic films is described in this paper. The obtained films, cured at 400°C in N2 atmosphere, exhibit dielectric constants as low as 1.6 which do not change after holding the wafers in a clean-room mbient for 2 months. Cross-sectional SEM images of the cured films show the aggregation of small granules with diameters ranging from 5 to 30 nm. The films can be obtained by conventional SOG process: spin-coating, baking and curing, without any additional process such as hydrophobic treatment.The average atomic compositions of the films are, Si/O/N/C = 40/55/5/0.5 (atomic %), by XPS analysis. These results indicate that the films have hydrogen silicon oxynitride structures. No evolution of H2O and NH3 was detected by TDS analysis in the temperature range of RT to 800°C. Hydrophobic Si-H and Si-H2 groups remaining in the film might prevent water absorption, resulting in the low dielectric constant.The remainder of Si-H and Si-H2 constituents in the cured films is the result of selective oxidation reactions of perhydropolysilazane in the baking process with the use of a specific catalyst. The structures of the films are tailored by altering the amount of the catalyst. In this study, we also demonstrate the relationship between the effect of the catalyst and the film properties.

Robust spin-on-glass poly(methyl)silsesquioxane-based low-k materials derived from a cyclic siloxane precursor

RSC Advances ◽  
2015 ◽  
Vol 5 (82) ◽  
pp. 66511-66517 ◽  
Author(s):  
Albert S. Lee ◽  
Sung Yeoun Oh ◽  
Seung-Sock Choi ◽  
He Seung Lee ◽  
Seung Sang Hwang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Cyclic Siloxane ◽  
Low Dielectric ◽  
Methyl Silsesquioxane ◽  
Low K

Low dielectric constant poly(methyl)silsesquioxane spin-on-glass resins incorporating a cyclic precursor exhibited exceptional mechanical properties to withstand CMP processes.

Conductances of potassium chloride and tetrabutyl ammonium picrate in dioxan-water mixtures at pressures up to 2500 bars

1970 ◽  
Vol 23 (5) ◽  
pp. 905 ◽  
Author(s):  
PJ Pearce ◽  
W Strauss
Keyword(s):  
Dielectric Constant ◽  
Potassium Chloride ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Solvent Concentration ◽  
Electrolytic Conductance ◽  
Low Dielectric ◽  
Tetrabutyl Ammonium ◽  
Finite Concentration ◽  
Tetrabutylammonium Picrate

The electrolytic conductance of solutions of potassium chloride and tetrabutyl- ammonium picrate over a range of concentrations have been measured in dioxan-water mixtures containing 0, 25, 50, 70, and 80% dioxan at 25� and pressures up to 1000 and 2500 bars respectively for the two solutes. The solvent concentration range corresponds to a range of dielectric constants of 78.3 (for water) to 11.98 (80% dioxan). The association of KCl in solutions of low dielectric constant is reduced by increasing pressure, so that the conductances of the solutions of finite concentration are not reduced as much by pressure as at infinite dilution. In contrast to this, the solutions of the tetrabutylammonium picrate are wholly dissociated even in very low dielectric constant solvents, as is shown by the limited concentration dependence of the conductance pressure characteristics.

Synthesis of a Novel Low Dielectric Constant Fluorine Containing Epoxy

2012 ◽  
Vol 262 ◽  
pp. 448-453 ◽  
Author(s):  
Jian Yong Lv ◽  
Yan Meng ◽  
Li Fan He ◽  
Teng Qiu ◽  
Xiao Yu Li ◽  
...  
Keyword(s):  
Weight Loss ◽  
Dielectric Constant ◽  
Bisphenol A ◽  
Water Absorption ◽  
Diglycidyl Ether ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Degradation Temperature

A novel fluorine containing epoxy 4-fluoro-4′,4″-diepoxypropoxy triphenyl methane (FDE) was designed and synthesized. The synthesized epoxy was cured by methyl nadic anhydride (MNA) and diglycidyl ether of bisphenol A (DGEBA) was chosen for comparison. Both glass transfer temperature (Tg) and 5% weight loss degradation temperature (Td5%) of cured FDE are over 60°C higher than that of DGEBA. Dielectric constants of the cured FDE at 106 Hz and 107 Hz are 3.09 and 2.91, comparing to 3.50 and 3.24 of the cured DGEBA, respectively. Furthermore, water absorption of the cured FDE is lower than that of DGBEA.

scholarly journals Preparation of Polyimide Films with Ultra-Low Dielectric Constant by Phase Inversion

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1383
Author(s):  
Panpan Zhang ◽  
Lize Zhang ◽  
Ke Zhang ◽  
Jiupeng Zhao ◽  
Yao Li
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Phase Inversion ◽  
Polyimide Film ◽  
Porous Film ◽  
Breakdown Field ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Dielectric Performance ◽  
Fluorinated Graphene

Due to the high value of its dielectric constant, polyimide does not meet the requirements of the development of integrated circuits and high-frequency printed circuits. The development of novel low dielectric constant polyimide materials for the preparation of flexible copper clad laminates is of theoretical and practical significance in the application of polyimide for 5G communications. In this work, different fluorinated graphene/polyamic acids (FG/PAA) were used as the precursor, and the porous polyimide film was successfully prepared by phase inversion. The dielectric constant of the porous polyimide film is relatively low, being less than 1.7. When the content of fluorinated graphene is 0.5 wt%, the overall dielectric performance of the porous film is the best, with a dielectric constant of 1.56 (10 kHz) and a characteristic breakdown field strength of 56.39 kV/mm. In addition, the mechanical properties of the film are relatively poor, with tensile strengths of 13.87 MPa (0.2 wt%), 13.61 MPa (0.5 wt%), and 6.25 MPa (1.0 wt%), respectively. Therefore, further improving the breakdown resistance and mechanical properties of the porous film is essential for the application of porous ultra-low dielectric polyimide materials.

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