Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (75) ◽  
pp. 39651-39656 ◽  
Author(s):  
Wenliang Wang ◽  
Zuolian Liu ◽  
Weijia Yang ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Growth Mechanism ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
Α Al2o3

High-quality GaN films with sharp and abrupt interfaces have been achieved on nitrided α-Al2O3 substrates by pulsed laser deposition. The effect of nitridation on the properties and the growth mechanism of GaN films have been carefully studied.

Vapour–liquid–solid-like growth of high-quality and uniform 3C–SiC heteroepitaxial films on α-Al2O3(0001) substrates

CrystEngComm ◽  
2021 ◽  
Author(s):  
Naoki Sannodo ◽  
Asuka Osumi ◽  
Kenichi Kaminaga ◽  
Shingo Maruyama ◽  
Yuji Matsumoto
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Beam Deflection ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
Α Al2o3

We employ our pulsed laser deposition system with rapid beam deflection to demonstrate the heteroepitaxial growth of 3C–SiC thin films by a vapour–liquid–solid-like mechanism by alternating deposition of SiC and NiSi2 flux in nanoscale.

Pulsed Laser Deposition of Gallium Nitride on Sapphire

1997 ◽  
Vol 468 ◽  
Author(s):  
V. Talyansky ◽  
R. D. Vispute ◽  
R. P. Sharma ◽  
S. Choopun ◽  
M. J. Downes ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Energy Gap ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
Rocking Curve ◽  
Gap Width ◽  
Minimum Yield

ABSTRACTWe have fabricated high quality single crystalline GaN films on sapphire (0001) substrates using pulsed laser deposition. Our best GaN films on sapphire (0001) featured the FWHM of the GaN (002) peak rocking curve of 7 arcmin, the RBS minimum yield of only 3%, and the energy gap width of 3.4 eV. The effect of the deposition temperature on the crystalline quality of the films is discussed.

Epitaxial growth and its mechanism of GaN films on nitrided LiGaO2(001) substrates by pulsed laser deposition

CrystEngComm ◽  
2015 ◽  
Vol 17 (5) ◽  
pp. 1073-1079 ◽  
Author(s):  
Weijia Yang ◽  
Wenliang Wang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

High-quality GaN films have been grown on nitrided LiGaO2 substrates by pulsed laser deposition. The effect of nitridation on the properties of the GaN films and the growth mechanism of GaN films grown on nitrided LiGaO2 substrates by pulsed laser deposition have also been systemically studied.

Crystalline quality of ZnSe thin films grown on GaAs by pulsed laser deposition in He and Ar ambients

2001 ◽  
Vol 388 (1-2) ◽  
pp. 189-194 ◽  
Author(s):  
Tapas Ganguli ◽  
M. Vedvyas ◽  
P. Bhattacharya ◽  
L.M. Kukreja ◽  
Alka Ingale ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
Znse Thin Films

Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

2019 ◽  
Vol 3 (9) ◽  
pp. 55-63 ◽  
Author(s):  
Antonello Tebano ◽  
Carmela Aruta ◽  
Pier Gianni Medaglia ◽  
Giuseppe Balestrino ◽  
Norberto G. Boggio ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
High Energy Electron ◽  
High Quality ◽  
Low Background

scholarly journals Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

2020 ◽  
Vol 31 (16) ◽  
pp. 165704 ◽  
Author(s):  
Yekai Song ◽  
Zhuojun Li ◽  
Hui Li ◽  
Shujie Tang ◽  
Gang Mu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

scholarly journals Pulsed laser deposition of single-layer MoS2 on Au(111): from nanosized crystals to large-area films

2019 ◽  
Vol 1 (2) ◽  
pp. 643-655 ◽  
Author(s):  
Francesco Tumino ◽  
Carlo S. Casari ◽  
Matteo Passoni ◽  
Valeria Russo ◽  
Andrea Li Bassi
Keyword(s):  
Pulsed Laser Deposition ◽  
2D Materials ◽  
Optoelectronic Devices ◽  
Pulsed Laser ◽  
Single Layer ◽  
Laser Deposition ◽  
Large Area ◽  
Molybdenum Disulphide ◽  
High Quality ◽  
Nanosized Crystals

Molybdenum disulphide (MoS2) is a promising material for heterogeneous catalysis and novel 2D optoelectronic devices. In this work, single-layer MoS2 is synthesized on Au(111) by pulsed laser deposition, showing the potentialities of this technique in the synthesis of high-quality 2D materials films.

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