Epitaxial growth and its mechanism of GaN films on nitrided LiGaO2(001) substrates by pulsed laser deposition

CrystEngComm ◽  
2015 ◽  
Vol 17 (5) ◽  
pp. 1073-1079 ◽  
Author(s):  
Weijia Yang ◽  
Wenliang Wang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

High-quality GaN films have been grown on nitrided LiGaO2 substrates by pulsed laser deposition. The effect of nitridation on the properties of the GaN films and the growth mechanism of GaN films grown on nitrided LiGaO2 substrates by pulsed laser deposition have also been systemically studied.

scholarly journals Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

2020 ◽  
Vol 31 (16) ◽  
pp. 165704 ◽  
Author(s):  
Yekai Song ◽  
Zhuojun Li ◽  
Hui Li ◽  
Shujie Tang ◽  
Gang Mu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

Epitaxial Growth of GaN Thin Films Using a Hybrid Pulsed Laser Deposition System

1999 ◽  
Vol 572 ◽  
Author(s):  
Philippe Mérel ◽  
Mohamed Chaker ◽  
Henri Pépin ◽  
Malek Tabbal
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Laser Intensity ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Nitrogen Flux ◽  
High Quality ◽  
Rocking Curve

ABSTRACTA hybrid Pulsed Laser Deposition system was developed to perform epitaxial growth of GaN on sapphire(0001). This system combines the laser ablation of a cooled Ga target with a well-characterized atomic nitrogen source. Taking advantage of the flexibility of this unique deposition system, high quality GaN thin films were deposited by optimizing both the laser intensity and the nitrogen flux. To date, our best GaN films show a FWHM of the GaN(0002) rocking curve peak equal to 480 arcsec. This result has been obtained at a laser intensity of I = 7×107 W/cm2, a substrate temperature of 800°C and under Ga-rich growth conditions.

scholarly journals Epitaxial growth of high-quality ZnS films on sapphire and silicon by pulsed laser deposition

1999 ◽  
Vol 14 (8) ◽  
pp. 695-698 ◽  
Author(s):  
Zhi-Jun Xin ◽  
Richard J Peaty ◽  
Harvey N Rutt ◽  
Robert W Eason
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
Zns Films

Epitaxial Growth of High Quality SiC of Pulsed Laser Deposition.

1995 ◽  
Author(s):  
David G. Hamblen ◽  
David B. Fenner ◽  
Peter A. Rosenthal ◽  
Joseph Cosgrove ◽  
Pang-Jen Kung
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (75) ◽  
pp. 39651-39656 ◽  
Author(s):  
Wenliang Wang ◽  
Zuolian Liu ◽  
Weijia Yang ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Growth Mechanism ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
Α Al2o3

High-quality GaN films with sharp and abrupt interfaces have been achieved on nitrided α-Al2O3 substrates by pulsed laser deposition. The effect of nitridation on the properties and the growth mechanism of GaN films have been carefully studied.

Epitaxial growth mechanism of pulsed laser deposited AlN films on Si (111) substrates

CrystEngComm ◽  
2014 ◽  
Vol 16 (15) ◽  
pp. 3148-3154 ◽  
Author(s):  
Hui Yang ◽  
Wenliang Wang ◽  
Zuolian Liu ◽  
Weijiang Yang ◽  
Guoqiang Li
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Si Substrate ◽  
Dislocation Formation

The epitaxial growth mechanism and causes of dislocation formation in AlN films on a Si substrate by pulsed laser deposition (PLD) are comprehensively proposed.

Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

2003 ◽  
Vol 83 (26) ◽  
pp. 5500-5502 ◽  
Author(s):  
J.-R. Duclère ◽  
M. Guilloux-Viry ◽  
V. Bouquet ◽  
A. Perrin ◽  
E. Cattan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition

Epitaxial growth of Ba1−xKxBiO3thin films by pulsed‐laser deposition

1993 ◽  
Vol 62 (4) ◽  
pp. 414-416 ◽  
Author(s):  
D. P. Norton ◽  
J. D. Budai ◽  
B. C. Chakoumakos ◽  
R. Feenstra
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition

2002 ◽  
Vol 420-421 ◽  
pp. 107-111 ◽  
Author(s):  
H Kim ◽  
J.S Horwitz ◽  
S.B Qadri ◽  
D.B Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

Epitaxial growth of optical Ba2NaNb5O15waveguide film by pulsed laser deposition

1994 ◽  
Vol 65 (16) ◽  
pp. 1995-1997 ◽  
Author(s):  
J. M. Liu ◽  
F. Zhang ◽  
Z. G. Liu ◽  
S. N. Zhu ◽  
L. J. Shi ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition
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