Pulsed Laser Deposition of Gallium Nitride on Sapphire

1997 ◽  
Vol 468 ◽  
Author(s):  
V. Talyansky ◽  
R. D. Vispute ◽  
R. P. Sharma ◽  
S. Choopun ◽  
M. J. Downes ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Energy Gap ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
Rocking Curve ◽  
Gap Width ◽  
Minimum Yield

ABSTRACTWe have fabricated high quality single crystalline GaN films on sapphire (0001) substrates using pulsed laser deposition. Our best GaN films on sapphire (0001) featured the FWHM of the GaN (002) peak rocking curve of 7 arcmin, the RBS minimum yield of only 3%, and the energy gap width of 3.4 eV. The effect of the deposition temperature on the crystalline quality of the films is discussed.

Epitaxial Growth of GaN Thin Films Using a Hybrid Pulsed Laser Deposition System

1999 ◽  
Vol 572 ◽  
Author(s):  
Philippe Mérel ◽  
Mohamed Chaker ◽  
Henri Pépin ◽  
Malek Tabbal
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Laser Intensity ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Nitrogen Flux ◽  
High Quality ◽  
Rocking Curve

ABSTRACTA hybrid Pulsed Laser Deposition system was developed to perform epitaxial growth of GaN on sapphire(0001). This system combines the laser ablation of a cooled Ga target with a well-characterized atomic nitrogen source. Taking advantage of the flexibility of this unique deposition system, high quality GaN thin films were deposited by optimizing both the laser intensity and the nitrogen flux. To date, our best GaN films show a FWHM of the GaN(0002) rocking curve peak equal to 480 arcsec. This result has been obtained at a laser intensity of I = 7×107 W/cm2, a substrate temperature of 800°C and under Ga-rich growth conditions.

Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (75) ◽  
pp. 39651-39656 ◽  
Author(s):  
Wenliang Wang ◽  
Zuolian Liu ◽  
Weijia Yang ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Growth Mechanism ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
Α Al2o3

High-quality GaN films with sharp and abrupt interfaces have been achieved on nitrided α-Al2O3 substrates by pulsed laser deposition. The effect of nitridation on the properties and the growth mechanism of GaN films have been carefully studied.

Characterization of superconducting SmBa2Cu3O7 films grown by pulsed laser deposition

2002 ◽  
Vol 17 (10) ◽  
pp. 2599-2603 ◽  
Author(s):  
Q. X. Jia ◽  
S. R. Foltyn ◽  
J. Y. Coulter ◽  
J. F. Smith ◽  
M. P. Maley
Keyword(s):  
Transition Temperature ◽  
Critical Current Density ◽  
Pulsed Laser Deposition ◽  
Critical Current ◽  
Current Density ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Transition ◽  
Transition Width

We have investigated epitaxial superconducting SmBa2Cu3O7 (Sm123) films grown by pulsed-laser deposition on single-crystal SrTiO3 substrates. The deposition temperature plays an important role in determining the superconducting properties of Sm123 films. The superconducting transition temperature increases with the deposition temperature whereas the transition width decreases at deposition temperatures in the range of 700–875 °C. A Sm123 film deposited at 850 °C exhibits a transition temperature above 93 K with a transition width less than 0.5 K. Even though Sm123 films exhibit a higher transition temperature than Yba2Cu3O7 (Y123), the Sm123 shows lower critical current density at liquid-nitrogen temperature. The nominal critical current density of Sm123 film is less than 1 MA/cm2 at 75.4 K. Nevertheless, the Sm123 films have less anisotropy and stronger pinning characteristics compared to Y123. They are also much smoother with fewer particulates, as revealed by scanning electron microscopy.

Crystalline quality of ZnSe thin films grown on GaAs by pulsed laser deposition in He and Ar ambients

2001 ◽  
Vol 388 (1-2) ◽  
pp. 189-194 ◽  
Author(s):  
Tapas Ganguli ◽  
M. Vedvyas ◽  
P. Bhattacharya ◽  
L.M. Kukreja ◽  
Alka Ingale ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
Znse Thin Films

Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

2019 ◽  
Vol 3 (9) ◽  
pp. 55-63 ◽  
Author(s):  
Antonello Tebano ◽  
Carmela Aruta ◽  
Pier Gianni Medaglia ◽  
Giuseppe Balestrino ◽  
Norberto G. Boggio ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
High Energy Electron ◽  
High Quality ◽  
Low Background

Photovoltaic properties of ITO/p-Si heterojunction prepared by pulsed laser deposition

2020 ◽  
Vol 34 (32) ◽  
pp. 2050321
Author(s):  
Raid A. Ismail ◽  
Omar A. Abdulrazzaq ◽  
Abdullah M. Ali
Keyword(s):  
Pulsed Laser Deposition ◽  
Indium Tin Oxide ◽  
Open Circuit Voltage ◽  
Energy Gap ◽  
Short Circuit ◽  
Pulsed Laser ◽  
Open Circuit ◽  
Laser Deposition ◽  
Optical Energy Gap ◽  
Photovoltaic Properties

In this study, indium tin oxide (ITO) was deposited onto sapphire and low resistive p-Si substrates using pulsed laser deposition (PLD) technique. The optical energy gap of ITO deposited on the sapphire substrate was 3.7 eV at room temperature. Photoluminescence (PL) of ITO shows an emission of broad peak at 524 nm. Photovoltaic (PV) characteristics of the n-ITO/p-Si heterojunction are examined and showed conversion efficiency [Formula: see text] of 1.8%. The open circuit voltage [Formula: see text] for this cell was 0.49 V while the short circuit current density [Formula: see text] was 17.4 mA/cm2. The fill factor of this cell was 22%. The ideality factor of ITO/Si heterojunction is about 3.1. The barrier height [Formula: see text] of the heterojunction was determined from I–V characteristics and was 0.83 eV. The responsivity of the heterojunction was measured and the maximum value of responsivity was 0.5 A/W without bias voltage. The minority carrier lifetime of the solar was measured using open circuit voltage decay (OCVD) method and found to be 227 [Formula: see text]s.

scholarly journals Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

2020 ◽  
Vol 31 (16) ◽  
pp. 165704 ◽  
Author(s):  
Yekai Song ◽  
Zhuojun Li ◽  
Hui Li ◽  
Shujie Tang ◽  
Gang Mu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality
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