Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei

RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26407 ◽  
Author(s):  
Bo Li ◽  
Shengxue Yang ◽  
Nengjie Huo ◽  
Yongtao Li ◽  
Juehan Yang ◽  
...  
Keyword(s):  
Monolayer Mos2 ◽  
Large Area

scholarly journals Utilizing complex oxide substrates to control carrier concentration in large-area monolayer MoS2 films

2021 ◽  
Vol 118 (9) ◽  
pp. 093103
Author(s):  
Xudong Zheng ◽  
Eli Gerber ◽  
Jisung Park ◽  
Don Werder ◽  
Orrin Kigner ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Complex Oxide ◽  
Monolayer Mos2 ◽  
Large Area ◽  
Oxide Substrates

scholarly journals Large-Area Epitaxial Monolayer MoS2

ACS Nano ◽  
2015 ◽  
Vol 9 (4) ◽  
pp. 4611-4620 ◽  
Author(s):  
Dumitru Dumcenco ◽  
Dmitry Ovchinnikov ◽  
Kolyo Marinov ◽  
Predrag Lazić ◽  
Marco Gibertini ◽  
...  
Keyword(s):  
Monolayer Mos2 ◽  
Large Area

Controllable growth of continuous monolayer MoS2 by balancing the moles of gaseous precursors via argon flow

CrystEngComm ◽  
2019 ◽  
Vol 21 (45) ◽  
pp. 6969-6977
Author(s):  
Ping Sun ◽  
Yuewei Liu ◽  
Jun Ma ◽  
Wei Li ◽  
Kailiang Zhang ◽  
...  
Keyword(s):  
Monolayer Mos2 ◽  
Si Substrate ◽  
Large Area ◽  
High Quality ◽  
Argon Flow ◽  
Controllable Growth ◽  
Testing Techniques

Large-area, uniform, and high quality continuous monolayer MoS2 was successfully grown on a SiO2/Si substrate, demonstrated using diverse analytical testing techniques.

Uniform large-area growth of nanotemplated high-quality monolayer MoS2

2017 ◽  
Vol 110 (26) ◽  
pp. 263103 ◽  
Author(s):  
Justin R. Young ◽  
Michael Chilcote ◽  
Matthew Barone ◽  
Jinsong Xu ◽  
Jyoti Katoch ◽  
...  
Keyword(s):  
Monolayer Mos2 ◽  
Large Area ◽  
High Quality ◽  
Area Growth

Modulating flow near substrate surface to grow clean and large-area monolayer MoS2

2020 ◽  
Vol 31 (41) ◽  
pp. 415706
Author(s):  
M A Gokul ◽  
Vrinda Narayanan ◽  
Atikur Rahman
Keyword(s):  
Substrate Surface ◽  
Monolayer Mos2 ◽  
Large Area

scholarly journals Probing the Growth Improvement of Large-Size High Quality Monolayer MoS2 by APCVD

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 433 ◽  
Author(s):  
Tao Han ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Wei Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Oxygen Plasma ◽  
Optoelectronic Devices ◽  
Oxygen Plasma Treatment ◽  
Monolayer Mos2 ◽  
Si Substrate ◽  
Large Area ◽  
High Quality ◽  
Graphene Quantum Dot ◽  
Large Size

Two-dimensional transition metal dichalcogenides (TMDs) have attracted attention from researchers in recent years. Monolayer molybdenum disulfide (MoS2) is the direct band gap two-dimensional crystal with excellent physical and electrical properties. Monolayer MoS2 can effectively compensate for the lack of band gap of graphene in the field of nano-electronic devices, which is widely used in catalysis, transistors, optoelectronic devices, and integrated circuits. Therefore, it is critical to obtain high-quality, large size monolayer MoS2. The large-area uniform high-quality monolayer MoS2 is successfully grown on an SiO2/Si substrate with oxygen plasma treatment and graphene quantum dot solution by atmospheric pressure chemical vapor deposition (APCVD) in this paper. In addition, the effects of substrate processing conditions, such as oxygen plasma treatment time, power, and dosage of graphene quantum dot solution on growth quality and the area of the monolayer of MoS2, are studied systematically, which would contribute to the preparation of large-area high-quality monolayer MoS2. Analysis and characterization of monolayer MoS2 are carried out by Optical Microscopy, AFM, XPS, Raman, and Photoluminescence Spectroscopy. The results show that monolayer MoS2 is a large-area, uniform, and triangular with a side length of 200 μm, and it is very effective to treat the SiO2/Si substrate by oxygen plasma and graphene quantum dot solution, which would help the fabrication of optoelectronic devices.

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition

2020 ◽  
Vol 12 (5) ◽  
pp. 6276-6282 ◽  
Author(s):  
Mengge Li ◽  
Jiadong Yao ◽  
Xiaoxiang Wu ◽  
Shucheng Zhang ◽  
Boran Xing ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Monolayer Mos2 ◽  
Large Area ◽  
P Type

Polarization dependent trion dynamics in large area CVD grown 2D monolayer MoS2 by terahertz time-domain spectroscopy

2019 ◽  
Vol 52 (15) ◽  
pp. 155104 ◽  
Author(s):  
Phuong X Nguyen ◽  
Sourav Garg ◽  
Wang-Kong Tse ◽  
Shanlin Pan ◽  
Patrick Kung ◽  
...  
Keyword(s):  
Time Domain ◽  
Monolayer Mos2 ◽  
Large Area ◽  
Terahertz Time Domain Spectroscopy ◽  
Time Domain Spectroscopy

Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime

2015 ◽  
Vol 28 (9) ◽  
pp. 1818-1823 ◽  
Author(s):  
Hsiao-Yu Chang ◽  
Maruthi Nagavalli Yogeesh ◽  
Rudresh Ghosh ◽  
Amritesh Rai ◽  
Atresh Sanne ◽  
...  
Keyword(s):  
Low Power ◽  
Monolayer Mos2 ◽  
Large Area
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