Controllable growth of continuous monolayer MoS2 by balancing the moles of gaseous precursors via argon flow

CrystEngComm ◽  
2019 ◽  
Vol 21 (45) ◽  
pp. 6969-6977
Author(s):  
Ping Sun ◽  
Yuewei Liu ◽  
Jun Ma ◽  
Wei Li ◽  
Kailiang Zhang ◽  
...  
Keyword(s):  
Monolayer Mos2 ◽  
Si Substrate ◽  
Large Area ◽  
High Quality ◽  
Argon Flow ◽  
Controllable Growth ◽  
Testing Techniques

Large-area, uniform, and high quality continuous monolayer MoS2 was successfully grown on a SiO2/Si substrate, demonstrated using diverse analytical testing techniques.

scholarly journals Probing the Growth Improvement of Large-Size High Quality Monolayer MoS2 by APCVD

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 433 ◽  
Author(s):  
Tao Han ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Wei Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Oxygen Plasma ◽  
Optoelectronic Devices ◽  
Oxygen Plasma Treatment ◽  
Monolayer Mos2 ◽  
Si Substrate ◽  
Large Area ◽  
High Quality ◽  
Graphene Quantum Dot ◽  
Large Size

Two-dimensional transition metal dichalcogenides (TMDs) have attracted attention from researchers in recent years. Monolayer molybdenum disulfide (MoS2) is the direct band gap two-dimensional crystal with excellent physical and electrical properties. Monolayer MoS2 can effectively compensate for the lack of band gap of graphene in the field of nano-electronic devices, which is widely used in catalysis, transistors, optoelectronic devices, and integrated circuits. Therefore, it is critical to obtain high-quality, large size monolayer MoS2. The large-area uniform high-quality monolayer MoS2 is successfully grown on an SiO2/Si substrate with oxygen plasma treatment and graphene quantum dot solution by atmospheric pressure chemical vapor deposition (APCVD) in this paper. In addition, the effects of substrate processing conditions, such as oxygen plasma treatment time, power, and dosage of graphene quantum dot solution on growth quality and the area of the monolayer of MoS2, are studied systematically, which would contribute to the preparation of large-area high-quality monolayer MoS2. Analysis and characterization of monolayer MoS2 are carried out by Optical Microscopy, AFM, XPS, Raman, and Photoluminescence Spectroscopy. The results show that monolayer MoS2 is a large-area, uniform, and triangular with a side length of 200 μm, and it is very effective to treat the SiO2/Si substrate by oxygen plasma and graphene quantum dot solution, which would help the fabrication of optoelectronic devices.

Synthesis and Characterization of High Quality InN Nanowires and Nano-networks

2007 ◽  
Vol 1058 ◽  
Author(s):  
Zhihua Cai ◽  
Samir Garzon ◽  
Richard A. Webb ◽  
Goutam Koley
Keyword(s):  
Fast Rate ◽  
Three Dimensional ◽  
Catalyst Layer ◽  
Direct Reaction ◽  
Si Substrate ◽  
Large Area ◽  
High Quality ◽  
Dimensional Growth ◽  
Quartz Tube Furnace

ABSTRACTHigh quality InN nanowires have been synthesized in a horizontal quartz-tube furnace through direct reaction between metallic Indium and Ammonia using Nitrogen as the carrier gas. Thin film of Au on SiO2/Si substrate has been used as the catalyst layer, facilitating vapor-liquid-solid growth of the nanostructures. The nanowires were grown at a very fast rate of up to 30 μm/hr. Smooth and horizontal nanowire growth was achieved only with nanoscale catalyst patterns, while large area catalyst coverage resulted in uncontrolled and three-dimensional growth. The InN nanowires, which were usually covered with a thin shell layer of In2O3, grew along [110] direction, with overall diameters 20 - 60 nm and lengths 5 - 15 μm. The synthesized nanowires bent spontaneously or got deflected from other nanowires at multiples of 30 degrees forming nano-networks. The catalyst particles for the NWs were found mostly at the sides of the NW apex which helped them to bend spontaneously or get deflected from other NWs at angles which were multiples of 30 degrees. The NW based FETs with a back-gated configuration have already been investigated. The gate-bias dependent mobility of the NWs ranged from 55 cm2/Vs to 220 cm2/Vs, and their carrier concentration was ∼1018 cm−3.

Uniform large-area growth of nanotemplated high-quality monolayer MoS2

2017 ◽  
Vol 110 (26) ◽  
pp. 263103 ◽  
Author(s):  
Justin R. Young ◽  
Michael Chilcote ◽  
Matthew Barone ◽  
Jinsong Xu ◽  
Jyoti Katoch ◽  
...  
Keyword(s):  
Monolayer Mos2 ◽  
Large Area ◽  
High Quality ◽  
Area Growth

scholarly journals A Novel Carbon-Assisted Chemical Vapor Deposition Growth of Large-Area Uniform Monolayer MoS2 and WS2

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2423
Author(s):  
Jeonghwan Bae ◽  
Youngdong Yoo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Powder ◽  
Carbon Cloth ◽  
Monolayer Mos2 ◽  
Large Area ◽  
High Quality ◽  
Chemical Vapor Deposition Growth ◽  
Cvd Method

Monolayer MoS2 can be used for various applications such as flexible optoelectronics and electronics due to its exceptional optical and electronic properties. For these applications, large-area synthesis of high-quality monolayer MoS2 is highly desirable. However, the conventional chemical vapor deposition (CVD) method using MoO3 and S powder has shown limitations in synthesizing high-quality monolayer MoS2 over a large area on a substrate. In this study, we present a novel carbon cloth-assisted CVD method for large-area uniform synthesis of high-quality monolayer MoS2. While the conventional CVD method produces thick MoS2 films in the center of the substrate and forms MoS2 monolayers at the edge of the thick MoS2 films, our carbon cloth-assisted CVD method uniformly grows high-quality monolayer MoS2 in the center of the substrate. The as-synthesized monolayer MoS2 was characterized in detail by Raman/photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy. We reveal the growth process of monolayer MoS2 initiated from MoS2 seeds by synthesizing monolayer MoS2 with varying reaction times. In addition, we show that the CVD method employing carbon powder also produces uniform monolayer MoS2 without forming thick MoS2 films in the center of the substrate. This confirms that the large-area growth of monolayer MoS2 using the carbon cloth-assisted CVD method is mainly due to reducing properties of the carbon material, rather than the effect of covering the carbon cloth. Furthermore, we demonstrate that our carbon cloth-assisted CVD method is generally applicable to large-area uniform synthesis of other monolayer transition metal dichalcogenides, including monolayer WS2.

A New Method for Bulk-Quantity Synthesis of Patterned Well-Aligned ZnO Nanowire Arrays

2005 ◽  
Vol 475-479 ◽  
pp. 3509-3512
Author(s):  
X.Y. Xu ◽  
Hui Zhao Zhang ◽  
Qiang Zhao ◽  
Yun Fa Chen ◽  
Jian Xu ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Photoluminescence Spectra ◽  
Zno Nanowire ◽  
Large Area ◽  
Stainless Steel Mesh ◽  
High Quality ◽  
Zno Nanowire Arrays ◽  
Growth Method ◽  
Controllable Growth ◽  
20 Nm

Large area well-aligned ZnO nanowire arrays have successfully been synthesized on an unconventional substrate: stainless-steel mesh at a low growth temperature of 400oC. The as-grown ZnO nanowires have uniform diameters about 20 nm and a strong UV peak was observed in photoluminescence spectra. The growth method provides a novel way to produce high quality ZnO nanowire arrays, and can be also used to direct the controllable growth of other nanomaterials.

scholarly journals Utilizing complex oxide substrates to control carrier concentration in large-area monolayer MoS2 films

2021 ◽  
Vol 118 (9) ◽  
pp. 093103
Author(s):  
Xudong Zheng ◽  
Eli Gerber ◽  
Jisung Park ◽  
Don Werder ◽  
Orrin Kigner ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Complex Oxide ◽  
Monolayer Mos2 ◽  
Large Area ◽  
Oxide Substrates

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate

2005 ◽  
Vol 34 (1) ◽  
pp. 23-26 ◽  
Author(s):  
Edward Y. Chang ◽  
Tsung-Hsi Yang ◽  
Guangli Luo ◽  
Chun-Yen Chang
Keyword(s):  
Epitaxial Layers ◽  
Si Substrate ◽  
High Quality ◽  
Buffer Structure

Large-area synthesis of high-quality β-MnO2nanowires and the mechanism of formation through a facile mineralization process

2005 ◽  
Vol 16 (10) ◽  
pp. 2072-2076 ◽  
Author(s):  
Fu Zhou ◽  
Huagui Zheng ◽  
Xuemei Zhao ◽  
Qixun Guo ◽  
Xiaomin Ni ◽  
...  
Keyword(s):  
Mechanism Of Formation ◽  
Large Area ◽  
Mineralization Process ◽  
High Quality

High-Quality GaAsxP1-x/In0.13Ga0.87P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations

1999 ◽  
Vol 38 (Part 1, No. 12A) ◽  
pp. 6645-6649 ◽  
Author(s):  
Yasuhiro Fujimoto ◽  
Hiroo Yonezu ◽  
Satoshi Irino ◽  
Katsuya Samonji ◽  
Kenji Momose ◽  
...  
Keyword(s):  
Quantum Well ◽  
Threading Dislocations ◽  
Si Substrate ◽  
High Quality ◽  
Quantum Well Structure
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