Uniform large-area growth of nanotemplated high-quality monolayer MoS2

2017 ◽  
Vol 110 (26) ◽  
pp. 263103 ◽  
Author(s):  
Justin R. Young ◽  
Michael Chilcote ◽  
Matthew Barone ◽  
Jinsong Xu ◽  
Jyoti Katoch ◽  
...  
Keyword(s):  
Monolayer Mos2 ◽  
Large Area ◽  
High Quality ◽  
Area Growth

Controllable growth of continuous monolayer MoS2 by balancing the moles of gaseous precursors via argon flow

CrystEngComm ◽  
2019 ◽  
Vol 21 (45) ◽  
pp. 6969-6977
Author(s):  
Ping Sun ◽  
Yuewei Liu ◽  
Jun Ma ◽  
Wei Li ◽  
Kailiang Zhang ◽  
...  
Keyword(s):  
Monolayer Mos2 ◽  
Si Substrate ◽  
Large Area ◽  
High Quality ◽  
Argon Flow ◽  
Controllable Growth ◽  
Testing Techniques

Large-area, uniform, and high quality continuous monolayer MoS2 was successfully grown on a SiO2/Si substrate, demonstrated using diverse analytical testing techniques.

Large-area growth of high-quality graphene/MoS2 vertical heterostructures by chemical vapor deposition with nucleation control

Carbon ◽  
2020 ◽  
Vol 168 ◽  
pp. 580-587
Author(s):  
Van Tu Nguyen ◽  
Young Chul Kim ◽  
Yeong Hwan Ahn ◽  
Soonil Lee ◽  
Ji-Yong Park
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
High Quality ◽  
Area Growth

scholarly journals Probing the Growth Improvement of Large-Size High Quality Monolayer MoS2 by APCVD

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 433 ◽  
Author(s):  
Tao Han ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Wei Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Oxygen Plasma ◽  
Optoelectronic Devices ◽  
Oxygen Plasma Treatment ◽  
Monolayer Mos2 ◽  
Si Substrate ◽  
Large Area ◽  
High Quality ◽  
Graphene Quantum Dot ◽  
Large Size

Two-dimensional transition metal dichalcogenides (TMDs) have attracted attention from researchers in recent years. Monolayer molybdenum disulfide (MoS2) is the direct band gap two-dimensional crystal with excellent physical and electrical properties. Monolayer MoS2 can effectively compensate for the lack of band gap of graphene in the field of nano-electronic devices, which is widely used in catalysis, transistors, optoelectronic devices, and integrated circuits. Therefore, it is critical to obtain high-quality, large size monolayer MoS2. The large-area uniform high-quality monolayer MoS2 is successfully grown on an SiO2/Si substrate with oxygen plasma treatment and graphene quantum dot solution by atmospheric pressure chemical vapor deposition (APCVD) in this paper. In addition, the effects of substrate processing conditions, such as oxygen plasma treatment time, power, and dosage of graphene quantum dot solution on growth quality and the area of the monolayer of MoS2, are studied systematically, which would contribute to the preparation of large-area high-quality monolayer MoS2. Analysis and characterization of monolayer MoS2 are carried out by Optical Microscopy, AFM, XPS, Raman, and Photoluminescence Spectroscopy. The results show that monolayer MoS2 is a large-area, uniform, and triangular with a side length of 200 μm, and it is very effective to treat the SiO2/Si substrate by oxygen plasma and graphene quantum dot solution, which would help the fabrication of optoelectronic devices.

scholarly journals A Novel Carbon-Assisted Chemical Vapor Deposition Growth of Large-Area Uniform Monolayer MoS2 and WS2

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2423
Author(s):  
Jeonghwan Bae ◽  
Youngdong Yoo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Powder ◽  
Carbon Cloth ◽  
Monolayer Mos2 ◽  
Large Area ◽  
High Quality ◽  
Chemical Vapor Deposition Growth ◽  
Cvd Method

Monolayer MoS2 can be used for various applications such as flexible optoelectronics and electronics due to its exceptional optical and electronic properties. For these applications, large-area synthesis of high-quality monolayer MoS2 is highly desirable. However, the conventional chemical vapor deposition (CVD) method using MoO3 and S powder has shown limitations in synthesizing high-quality monolayer MoS2 over a large area on a substrate. In this study, we present a novel carbon cloth-assisted CVD method for large-area uniform synthesis of high-quality monolayer MoS2. While the conventional CVD method produces thick MoS2 films in the center of the substrate and forms MoS2 monolayers at the edge of the thick MoS2 films, our carbon cloth-assisted CVD method uniformly grows high-quality monolayer MoS2 in the center of the substrate. The as-synthesized monolayer MoS2 was characterized in detail by Raman/photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy. We reveal the growth process of monolayer MoS2 initiated from MoS2 seeds by synthesizing monolayer MoS2 with varying reaction times. In addition, we show that the CVD method employing carbon powder also produces uniform monolayer MoS2 without forming thick MoS2 films in the center of the substrate. This confirms that the large-area growth of monolayer MoS2 using the carbon cloth-assisted CVD method is mainly due to reducing properties of the carbon material, rather than the effect of covering the carbon cloth. Furthermore, we demonstrate that our carbon cloth-assisted CVD method is generally applicable to large-area uniform synthesis of other monolayer transition metal dichalcogenides, including monolayer WS2.

scholarly journals Utilizing complex oxide substrates to control carrier concentration in large-area monolayer MoS2 films

2021 ◽  
Vol 118 (9) ◽  
pp. 093103
Author(s):  
Xudong Zheng ◽  
Eli Gerber ◽  
Jisung Park ◽  
Don Werder ◽  
Orrin Kigner ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Complex Oxide ◽  
Monolayer Mos2 ◽  
Large Area ◽  
Oxide Substrates

Large-area synthesis of high-quality β-MnO2nanowires and the mechanism of formation through a facile mineralization process

2005 ◽  
Vol 16 (10) ◽  
pp. 2072-2076 ◽  
Author(s):  
Fu Zhou ◽  
Huagui Zheng ◽  
Xuemei Zhao ◽  
Qixun Guo ◽  
Xiaomin Ni ◽  
...  
Keyword(s):  
Mechanism Of Formation ◽  
Large Area ◽  
Mineralization Process ◽  
High Quality

On‐axis dc magnetron sputtering of large area high quality YBa2Cu3O7superconducting thin films

1992 ◽  
Vol 61 (3) ◽  
pp. 348-350 ◽  
Author(s):  
Y. Z. Zhang ◽  
L. Li ◽  
Y. Y. Zhao ◽  
B. R. Zhao ◽  
J. W. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Large Area ◽  
High Quality

CVD growth of high-quality and large-area continuous h-BN thin films directly on stainless-steel as protective coatings

2021 ◽  
pp. 100135
Author(s):  
Shuai Jia ◽  
Weibing Chen ◽  
Jing Zhang ◽  
Chen-Yang Lin ◽  
Hua Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Protective Coatings ◽  
Large Area ◽  
High Quality ◽  
Cvd Growth

scholarly journals Estimating model- and sampling-related uncertainty in large-area growth predictions

2018 ◽  
Vol 390 ◽  
pp. 62-69 ◽  
Author(s):  
L.C. Melo ◽  
R. Schneider ◽  
M. Fortin
Keyword(s):  
Large Area ◽  
Area Growth
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