P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition

2020 ◽  
Vol 12 (5) ◽  
pp. 6276-6282 ◽  
Author(s):  
Mengge Li ◽  
Jiadong Yao ◽  
Xiaoxiang Wu ◽  
Shucheng Zhang ◽  
Boran Xing ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Monolayer Mos2 ◽  
Large Area ◽  
P Type

scholarly journals Correction: Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

Nanoscale ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 365-365
Author(s):  
Sushil Kumar Pandey ◽  
Hussain Alsalman ◽  
Javad G. Azadani ◽  
Nezhueyotl Izquierdo ◽  
Tony Low ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Substitutional Doping ◽  
P Type

Correction for ‘Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition’ by Stephen A. Campbell et al., Nanoscale, 2018, 10, 21374–21385.

Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

Nanoscale ◽  
2018 ◽  
Vol 10 (45) ◽  
pp. 21374-21385 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Hussain Alsalman ◽  
Javad G. Azadani ◽  
Nezhueyotl Izquierdo ◽  
Tony Low ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Crystal Lattice ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Tungsten Diselenide ◽  
2D Material ◽  
Substitutional Doping ◽  
P Type ◽  
Controlled Doping

Controlled doping of the p-type 2D material tungsten diselenide, done with niobium substitution for tungsten on the crystal lattice, can tune 2D transistor characteristics.

p-Type transition-metal doping of large-area MoS2thin films grown by chemical vapor deposition

Nanoscale ◽  
2017 ◽  
Vol 9 (10) ◽  
pp. 3576-3584 ◽  
Author(s):  
E. Z. Xu ◽  
H. M. Liu ◽  
K. Park ◽  
Z. Li ◽  
Y. Losovyj ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transition Metal Doping ◽  
Large Area ◽  
Metal Doping ◽  
Type Transition ◽  
P Type

scholarly journals Characteristics of p-Type Conduction in P-Doped MoS2 by Phosphorous Pentoxide during Chemical Vapor Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1278 ◽  
Author(s):  
Jae Sang Lee ◽  
Chang-Soo Park ◽  
Tae Young Kim ◽  
Yoon Sok Kim ◽  
Eun Kyu Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Monolayer Mos2 ◽  
Current Ratio ◽  
Phosphorous Pentoxide ◽  
P Type ◽  
Type Conduction

We demonstrated p-type conduction in MoS2 grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS2 with a triangular shape and 15-µm grains was confirmed by atomic force microscopy. The difference between the Raman signals of the A1g and E12g modes for both the pristine and P-doped samples was 19.4 cm−1. In the X-ray photoelectron spectroscopy results, the main core level peaks of P-doped MoS2 downshifted by about 0.5 eV to a lower binding energy compared to the pristine material. Field-effect transistors (FETs) fabricated with the P-doped monolayer MoS2 showed p-type conduction with a field-effect mobility of 0.023 cm2/V⋅s and an on/off current ratio of 103, while FETs with the pristine MoS2 showed n-type behavior with a field-effect mobility of 29.7 cm2/V⋅s and an on/off current ratio of 105. The carriers in the FET channel were identified as holes with a concentration of 1.01 × 1011 cm−2 in P-doped MoS2, while the pristine material had an electron concentration of 6.47 × 1011 cm−2.

scholarly journals A Novel Carbon-Assisted Chemical Vapor Deposition Growth of Large-Area Uniform Monolayer MoS2 and WS2

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2423
Author(s):  
Jeonghwan Bae ◽  
Youngdong Yoo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Powder ◽  
Carbon Cloth ◽  
Monolayer Mos2 ◽  
Large Area ◽  
High Quality ◽  
Chemical Vapor Deposition Growth ◽  
Cvd Method

Monolayer MoS2 can be used for various applications such as flexible optoelectronics and electronics due to its exceptional optical and electronic properties. For these applications, large-area synthesis of high-quality monolayer MoS2 is highly desirable. However, the conventional chemical vapor deposition (CVD) method using MoO3 and S powder has shown limitations in synthesizing high-quality monolayer MoS2 over a large area on a substrate. In this study, we present a novel carbon cloth-assisted CVD method for large-area uniform synthesis of high-quality monolayer MoS2. While the conventional CVD method produces thick MoS2 films in the center of the substrate and forms MoS2 monolayers at the edge of the thick MoS2 films, our carbon cloth-assisted CVD method uniformly grows high-quality monolayer MoS2 in the center of the substrate. The as-synthesized monolayer MoS2 was characterized in detail by Raman/photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy. We reveal the growth process of monolayer MoS2 initiated from MoS2 seeds by synthesizing monolayer MoS2 with varying reaction times. In addition, we show that the CVD method employing carbon powder also produces uniform monolayer MoS2 without forming thick MoS2 films in the center of the substrate. This confirms that the large-area growth of monolayer MoS2 using the carbon cloth-assisted CVD method is mainly due to reducing properties of the carbon material, rather than the effect of covering the carbon cloth. Furthermore, we demonstrate that our carbon cloth-assisted CVD method is generally applicable to large-area uniform synthesis of other monolayer transition metal dichalcogenides, including monolayer WS2.

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Michael E. Ramón ◽  
Aparna Gupta ◽  
Chris Corbet ◽  
Domingo A. Ferrer ◽  
Hema C. P. Movva ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Large Area ◽  
Cobalt Thin Films ◽  
Cmos Compatible
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