Epitaxial Growth of High Quality SiC of Pulsed Laser Deposition.

1995 ◽  
Author(s):  
David G. Hamblen ◽  
David B. Fenner ◽  
Peter A. Rosenthal ◽  
Joseph Cosgrove ◽  
Pang-Jen Kung
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

scholarly journals Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

2020 ◽  
Vol 31 (16) ◽  
pp. 165704 ◽  
Author(s):  
Yekai Song ◽  
Zhuojun Li ◽  
Hui Li ◽  
Shujie Tang ◽  
Gang Mu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

Epitaxial Growth of GaN Thin Films Using a Hybrid Pulsed Laser Deposition System

1999 ◽  
Vol 572 ◽  
Author(s):  
Philippe Mérel ◽  
Mohamed Chaker ◽  
Henri Pépin ◽  
Malek Tabbal
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Laser Intensity ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Nitrogen Flux ◽  
High Quality ◽  
Rocking Curve

ABSTRACTA hybrid Pulsed Laser Deposition system was developed to perform epitaxial growth of GaN on sapphire(0001). This system combines the laser ablation of a cooled Ga target with a well-characterized atomic nitrogen source. Taking advantage of the flexibility of this unique deposition system, high quality GaN thin films were deposited by optimizing both the laser intensity and the nitrogen flux. To date, our best GaN films show a FWHM of the GaN(0002) rocking curve peak equal to 480 arcsec. This result has been obtained at a laser intensity of I = 7×107 W/cm2, a substrate temperature of 800°C and under Ga-rich growth conditions.

scholarly journals Epitaxial growth of high-quality ZnS films on sapphire and silicon by pulsed laser deposition

1999 ◽  
Vol 14 (8) ◽  
pp. 695-698 ◽  
Author(s):  
Zhi-Jun Xin ◽  
Richard J Peaty ◽  
Harvey N Rutt ◽  
Robert W Eason
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
Zns Films

Epitaxial growth and its mechanism of GaN films on nitrided LiGaO2(001) substrates by pulsed laser deposition

CrystEngComm ◽  
2015 ◽  
Vol 17 (5) ◽  
pp. 1073-1079 ◽  
Author(s):  
Weijia Yang ◽  
Wenliang Wang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

High-quality GaN films have been grown on nitrided LiGaO2 substrates by pulsed laser deposition. The effect of nitridation on the properties of the GaN films and the growth mechanism of GaN films grown on nitrided LiGaO2 substrates by pulsed laser deposition have also been systemically studied.

Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

2003 ◽  
Vol 83 (26) ◽  
pp. 5500-5502 ◽  
Author(s):  
J.-R. Duclère ◽  
M. Guilloux-Viry ◽  
V. Bouquet ◽  
A. Perrin ◽  
E. Cattan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition

Epitaxial growth of Ba1−xKxBiO3thin films by pulsed‐laser deposition

1993 ◽  
Vol 62 (4) ◽  
pp. 414-416 ◽  
Author(s):  
D. P. Norton ◽  
J. D. Budai ◽  
B. C. Chakoumakos ◽  
R. Feenstra
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition

2002 ◽  
Vol 420-421 ◽  
pp. 107-111 ◽  
Author(s):  
H Kim ◽  
J.S Horwitz ◽  
S.B Qadri ◽  
D.B Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

Epitaxial growth of optical Ba2NaNb5O15waveguide film by pulsed laser deposition

1994 ◽  
Vol 65 (16) ◽  
pp. 1995-1997 ◽  
Author(s):  
J. M. Liu ◽  
F. Zhang ◽  
Z. G. Liu ◽  
S. N. Zhu ◽  
L. J. Shi ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition

1995 ◽  
Vol 77 (9) ◽  
pp. 4724-4728 ◽  
Author(s):  
R. D. Vispute ◽  
J. Narayan ◽  
Hong Wu ◽  
K. Jagannadham
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition
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